JPS5327376A - Forming method of high resistanc e layer - Google Patents

Forming method of high resistanc e layer

Info

Publication number
JPS5327376A
JPS5327376A JP10202976A JP10202976A JPS5327376A JP S5327376 A JPS5327376 A JP S5327376A JP 10202976 A JP10202976 A JP 10202976A JP 10202976 A JP10202976 A JP 10202976A JP S5327376 A JPS5327376 A JP S5327376A
Authority
JP
Japan
Prior art keywords
layer
forming method
resistanc
substrate
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10202976A
Other languages
Japanese (ja)
Other versions
JPS587065B2 (en
Inventor
Shunji Nojima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP51102029A priority Critical patent/JPS587065B2/en
Publication of JPS5327376A publication Critical patent/JPS5327376A/en
Publication of JPS587065B2 publication Critical patent/JPS587065B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To obtain a high resistance layer stable to temperature rise at the later heat treatment and element operation by implanting Ne ions to the entire surface or a part of the As doped layer provided within a Si substrate then subjecting the substrate to heat treatment.
COPYRIGHT: (C)1978,JPO&Japio
JP51102029A 1976-08-26 1976-08-26 Semiconductor device with high resistance layer and method for manufacturing the same Expired JPS587065B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51102029A JPS587065B2 (en) 1976-08-26 1976-08-26 Semiconductor device with high resistance layer and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51102029A JPS587065B2 (en) 1976-08-26 1976-08-26 Semiconductor device with high resistance layer and method for manufacturing the same

Publications (2)

Publication Number Publication Date
JPS5327376A true JPS5327376A (en) 1978-03-14
JPS587065B2 JPS587065B2 (en) 1983-02-08

Family

ID=14316318

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51102029A Expired JPS587065B2 (en) 1976-08-26 1976-08-26 Semiconductor device with high resistance layer and method for manufacturing the same

Country Status (1)

Country Link
JP (1) JPS587065B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62244160A (en) * 1986-04-17 1987-10-24 Mitsubishi Electric Corp Semiconductor device
US4851359A (en) * 1985-12-27 1989-07-25 Bull S.A. Method of producing an electrical resistor by implanting a semiconductor material with rare gas

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4851359A (en) * 1985-12-27 1989-07-25 Bull S.A. Method of producing an electrical resistor by implanting a semiconductor material with rare gas
JPS62244160A (en) * 1986-04-17 1987-10-24 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
JPS587065B2 (en) 1983-02-08

Similar Documents

Publication Publication Date Title
JPS53105177A (en) Manufacture of semiconductor device
JPS5327376A (en) Forming method of high resistanc e layer
JPS51142975A (en) Production method of semiconductor devices
JPS5421265A (en) Forming method of semiconductor oxide film
JPS5420671A (en) Production of semiconductor devices
JPS53148394A (en) Manufacture of semiconductor device
JPS533066A (en) Electrode formation method
JPS5335375A (en) Heating method
JPS52104868A (en) Semiconductor
JPS5395570A (en) Forming method of epitaxial layer
JPS53142700A (en) Method of manufacturing piezoelectric porcelain element
JPS5398536A (en) Manufacturing process of sheathed heater
JPS5390758A (en) Forming method of high resistance semiconductor layer
JPS52154377A (en) Forming method for contact parts in part of shallow diffused layer
JPS531336A (en) Method of manufacturing sheath heater
JPS5410667A (en) Semiconductor device
JPS53142698A (en) Method of manufacturing resistor
JPS53130979A (en) Manufacture for semiconductor device
JPS5483373A (en) Heating-up method of semiconductor substrate
JPS52125270A (en) Semiconductor element electrode and its preparing method
JPS5357753A (en) Diffusion layer formation method to semiconductor substrate
JPS52122079A (en) Forming method of ohmic electrodes
JPS53112668A (en) Preparing method for oxide film
JPS5384554A (en) Manufacture for semiconductor device
JPS53107284A (en) Production of semiconductor device