JPS57111078A - Multiwavelength light-emitting element - Google Patents

Multiwavelength light-emitting element

Info

Publication number
JPS57111078A
JPS57111078A JP18735980A JP18735980A JPS57111078A JP S57111078 A JPS57111078 A JP S57111078A JP 18735980 A JP18735980 A JP 18735980A JP 18735980 A JP18735980 A JP 18735980A JP S57111078 A JPS57111078 A JP S57111078A
Authority
JP
Japan
Prior art keywords
light
layer
emitting region
active layer
type layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18735980A
Other languages
Japanese (ja)
Inventor
Hiroshi Okuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP18735980A priority Critical patent/JPS57111078A/en
Publication of JPS57111078A publication Critical patent/JPS57111078A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To contract the light-emitting region while the current path is squeezed also by a method wherein, in an N-P-N structure or a P-N-P structure, a P type layer is buried in an N type layer, or on the contrary, the N type layer is buried in the P type layer. CONSTITUTION:A current shielding layer 2, an N-InP layer 3, an active layer (wavelength lambda1) 4, a P-InP layer 5, an active layer (wavelength lambda2) 6, and an N-InP layer 7 are provided on an N-InP substrate 1. And the wavelength of an emitted light is made longer for an active layer (light emitting region) in proportion to going into the inner part viewed from the side where the light is picked out, no light is to be absorbed in the active region on the midway, and each active layer is formed into a double-hetero structure wherein the active layer is pinched by the material having a large band gap. And the P type layer is buried in the N type layer when the light-emitting region is contracted using the N-P-N structure, the light-emitting region is contracted after the flow of current is stopped and the light-emitting region of the active layer 6 is contracted by an N-electrode 8A, thereby enabling to emit the light of lambda2>lambda1 from the narrow region of 10 or 20.
JP18735980A 1980-12-26 1980-12-26 Multiwavelength light-emitting element Pending JPS57111078A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18735980A JPS57111078A (en) 1980-12-26 1980-12-26 Multiwavelength light-emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18735980A JPS57111078A (en) 1980-12-26 1980-12-26 Multiwavelength light-emitting element

Publications (1)

Publication Number Publication Date
JPS57111078A true JPS57111078A (en) 1982-07-10

Family

ID=16204608

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18735980A Pending JPS57111078A (en) 1980-12-26 1980-12-26 Multiwavelength light-emitting element

Country Status (1)

Country Link
JP (1) JPS57111078A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2365528A3 (en) * 2010-03-09 2014-05-07 LG Innotek Co., Ltd. Two light emitting diodes stacked in an n-p-n arrangement and LED package comprising the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2365528A3 (en) * 2010-03-09 2014-05-07 LG Innotek Co., Ltd. Two light emitting diodes stacked in an n-p-n arrangement and LED package comprising the same

Similar Documents

Publication Publication Date Title
JPS56135994A (en) Semiconductor light emitting device
JPS5269285A (en) Semiconductor laser device
JPS57111078A (en) Multiwavelength light-emitting element
JPS56112782A (en) Semiconductor laser
JPS566480A (en) Semiconductor light emitting diode
JPS577984A (en) Semiconductor light emitting device
JPS5763885A (en) Semiconductor laser device
JPS6484758A (en) Light-emitting diode
JPS56142691A (en) Semiconductor light emitting device
JPS5524418A (en) Light integrated circuit
JPS56112783A (en) Semiconductor laser
JPS5643794A (en) Semiconductor laser
JPS57139982A (en) Semiconductor laser element
JPS5723291A (en) Semiconductor laser device
JPS5624987A (en) Gaas infrared ray emitting diode and manufacture thereof
JPS57139984A (en) Buried photo emitting and receiving semiconductor integrated device
JPS5580388A (en) Semiconductor light emitting device
JPS57198681A (en) Optical semiconductor
JPS5661187A (en) Buried-type semiconductor light-emitting element
JPS5724587A (en) Light-emitting device
JPS57160181A (en) Light amplifying semiconductor device
JPS56116685A (en) Semiconductor laser device
JPS5728374A (en) Semiconductor light emitting element
JPS5721884A (en) Semiconductor laser
JPS57198673A (en) Semiconductor light emitting device