JPS57111078A - Multiwavelength light-emitting element - Google Patents
Multiwavelength light-emitting elementInfo
- Publication number
- JPS57111078A JPS57111078A JP18735980A JP18735980A JPS57111078A JP S57111078 A JPS57111078 A JP S57111078A JP 18735980 A JP18735980 A JP 18735980A JP 18735980 A JP18735980 A JP 18735980A JP S57111078 A JPS57111078 A JP S57111078A
- Authority
- JP
- Japan
- Prior art keywords
- light
- layer
- emitting region
- active layer
- type layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To contract the light-emitting region while the current path is squeezed also by a method wherein, in an N-P-N structure or a P-N-P structure, a P type layer is buried in an N type layer, or on the contrary, the N type layer is buried in the P type layer. CONSTITUTION:A current shielding layer 2, an N-InP layer 3, an active layer (wavelength lambda1) 4, a P-InP layer 5, an active layer (wavelength lambda2) 6, and an N-InP layer 7 are provided on an N-InP substrate 1. And the wavelength of an emitted light is made longer for an active layer (light emitting region) in proportion to going into the inner part viewed from the side where the light is picked out, no light is to be absorbed in the active region on the midway, and each active layer is formed into a double-hetero structure wherein the active layer is pinched by the material having a large band gap. And the P type layer is buried in the N type layer when the light-emitting region is contracted using the N-P-N structure, the light-emitting region is contracted after the flow of current is stopped and the light-emitting region of the active layer 6 is contracted by an N-electrode 8A, thereby enabling to emit the light of lambda2>lambda1 from the narrow region of 10 or 20.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18735980A JPS57111078A (en) | 1980-12-26 | 1980-12-26 | Multiwavelength light-emitting element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18735980A JPS57111078A (en) | 1980-12-26 | 1980-12-26 | Multiwavelength light-emitting element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57111078A true JPS57111078A (en) | 1982-07-10 |
Family
ID=16204608
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18735980A Pending JPS57111078A (en) | 1980-12-26 | 1980-12-26 | Multiwavelength light-emitting element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57111078A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2365528A3 (en) * | 2010-03-09 | 2014-05-07 | LG Innotek Co., Ltd. | Two light emitting diodes stacked in an n-p-n arrangement and LED package comprising the same |
-
1980
- 1980-12-26 JP JP18735980A patent/JPS57111078A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2365528A3 (en) * | 2010-03-09 | 2014-05-07 | LG Innotek Co., Ltd. | Two light emitting diodes stacked in an n-p-n arrangement and LED package comprising the same |
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