JPS5723291A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS5723291A
JPS5723291A JP9739780A JP9739780A JPS5723291A JP S5723291 A JPS5723291 A JP S5723291A JP 9739780 A JP9739780 A JP 9739780A JP 9739780 A JP9739780 A JP 9739780A JP S5723291 A JPS5723291 A JP S5723291A
Authority
JP
Japan
Prior art keywords
layer
type
gap width
energy gap
active layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9739780A
Other languages
Japanese (ja)
Other versions
JPS6325517B2 (en
Inventor
Osamu Matsuda
Yoshifumi Mori
Kenji Morisane
Masaaki Ayabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP9739780A priority Critical patent/JPS5723291A/en
Publication of JPS5723291A publication Critical patent/JPS5723291A/en
Publication of JPS6325517B2 publication Critical patent/JPS6325517B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2203—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure with a transverse junction stripe [TJS] structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To intensify the light output as well as decrease the spreading angle of a radiated beam, by permitting the oscillation in a single mode, by providing a plurality of active layers with a necessary distance relationship thereamong, and by making the position of the maximum light intensify exist in the region having a large energy gap width outside the active layers. CONSTITUTION:Epitaxially grown on a semi-insulative or n type GaAs substrate 11 in a laminating manner are an n type Al0.35Ga0.65As clad layer 12 having an energy gap width larger than those of active layers 13 and 15, the n type GaAs active layer 13 having an energy gap width smaller than this, an n type Al0.2Ga0.8As cavity layer 14 having an energy gap width larger than that, the n type active layer 15 the same as the layer 13, an n type cavity layer 16 the same as the layer 14, and an n type GaAs cap layer 17. Then, carrier injection regions (a) and (b) are provided in the parts of the first and second active layers 13 and 15 where a p-n junction J crosses. In this case, the distance between the regions (a) and (b) is specified so that the rays of light emitted when a forward voltage is applied between electrodes 20 and 21 interfere with each other to become maximum as C marked with X.
JP9739780A 1980-07-16 1980-07-16 Semiconductor laser device Granted JPS5723291A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9739780A JPS5723291A (en) 1980-07-16 1980-07-16 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9739780A JPS5723291A (en) 1980-07-16 1980-07-16 Semiconductor laser device

Publications (2)

Publication Number Publication Date
JPS5723291A true JPS5723291A (en) 1982-02-06
JPS6325517B2 JPS6325517B2 (en) 1988-05-25

Family

ID=14191378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9739780A Granted JPS5723291A (en) 1980-07-16 1980-07-16 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS5723291A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6179287A (en) * 1984-09-21 1986-04-22 シーメンス、アクチエンゲゼルシヤフト Laser diode apparatus
JPS63317989A (en) * 1987-06-19 1988-12-26 Sanyo Electric Co Ltd Data processor
WO2006030746A1 (en) * 2004-09-13 2006-03-23 The University Of Tokyo Semiconductor light-emitting element
JP2009011953A (en) * 2007-07-05 2009-01-22 Panasonic Corp Solvent recovery apparatus

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPL.PHYS.LETT=1978 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6179287A (en) * 1984-09-21 1986-04-22 シーメンス、アクチエンゲゼルシヤフト Laser diode apparatus
JPS63317989A (en) * 1987-06-19 1988-12-26 Sanyo Electric Co Ltd Data processor
WO2006030746A1 (en) * 2004-09-13 2006-03-23 The University Of Tokyo Semiconductor light-emitting element
JP2009011953A (en) * 2007-07-05 2009-01-22 Panasonic Corp Solvent recovery apparatus

Also Published As

Publication number Publication date
JPS6325517B2 (en) 1988-05-25

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