JPS5513930A - Manufacturing method for semiconductor device - Google Patents
Manufacturing method for semiconductor deviceInfo
- Publication number
- JPS5513930A JPS5513930A JP8672778A JP8672778A JPS5513930A JP S5513930 A JPS5513930 A JP S5513930A JP 8672778 A JP8672778 A JP 8672778A JP 8672778 A JP8672778 A JP 8672778A JP S5513930 A JPS5513930 A JP S5513930A
- Authority
- JP
- Japan
- Prior art keywords
- deposited
- defect
- nature
- crystal
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To prevent weakness in characteristics by injecting a life time killer into the defective portions provided selectably and previously in the portion not associated with the characteristics to be deposited.
CONSTITUTION: an impurity useful for a life time killer such as Au, Pt and others has in general the nature being deposited in the portion having the crystal or the defect on the Si substrate. By making use of this nature, when the crystal or the defect has been formed by a chemical etching process or an ion implantation in the location at which the characteristics of the semiconductor chip may not be suffered from an undesirable influence, for example a dicing line, pad portion, or a field portion, the crystalization is caused at those locations. When a Pt layer attached to the back face of the substrate is heated in the closed tube under the N2 atmosphere at 900°C, 30 minutes, Pt would be deposited in the dicing portion.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8672778A JPS5513930A (en) | 1978-07-18 | 1978-07-18 | Manufacturing method for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8672778A JPS5513930A (en) | 1978-07-18 | 1978-07-18 | Manufacturing method for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5513930A true JPS5513930A (en) | 1980-01-31 |
Family
ID=13894881
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8672778A Pending JPS5513930A (en) | 1978-07-18 | 1978-07-18 | Manufacturing method for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5513930A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5848964A (en) * | 1981-09-18 | 1983-03-23 | Toyo Electric Mfg Co Ltd | Forming method for junction of reverse conducting thyristor |
JPS5852873A (en) * | 1981-09-25 | 1983-03-29 | Toyo Electric Mfg Co Ltd | Forming method for junction of reverse conducting thyristor |
-
1978
- 1978-07-18 JP JP8672778A patent/JPS5513930A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5848964A (en) * | 1981-09-18 | 1983-03-23 | Toyo Electric Mfg Co Ltd | Forming method for junction of reverse conducting thyristor |
JPS5852873A (en) * | 1981-09-25 | 1983-03-29 | Toyo Electric Mfg Co Ltd | Forming method for junction of reverse conducting thyristor |
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