JPS5333050A - Production of semiconductor element - Google Patents

Production of semiconductor element

Info

Publication number
JPS5333050A
JPS5333050A JP10674276A JP10674276A JPS5333050A JP S5333050 A JPS5333050 A JP S5333050A JP 10674276 A JP10674276 A JP 10674276A JP 10674276 A JP10674276 A JP 10674276A JP S5333050 A JPS5333050 A JP S5333050A
Authority
JP
Japan
Prior art keywords
production
semiconductor element
cutting
wafer
laser light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10674276A
Other languages
Japanese (ja)
Other versions
JPS5641173B2 (en
Inventor
Hiroshi Kaneko
Yutaka Misawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10674276A priority Critical patent/JPS5333050A/en
Publication of JPS5333050A publication Critical patent/JPS5333050A/en
Publication of JPS5641173B2 publication Critical patent/JPS5641173B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Dicing (AREA)

Abstract

PURPOSE: To perform satisfactory cutting by removing the glass layer in the upper part with laser light thereafter mechanically cutting the wafer in the cutting process of Si.
COPYRIGHT: (C)1978,JPO&Japio
JP10674276A 1976-09-08 1976-09-08 Production of semiconductor element Granted JPS5333050A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10674276A JPS5333050A (en) 1976-09-08 1976-09-08 Production of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10674276A JPS5333050A (en) 1976-09-08 1976-09-08 Production of semiconductor element

Publications (2)

Publication Number Publication Date
JPS5333050A true JPS5333050A (en) 1978-03-28
JPS5641173B2 JPS5641173B2 (en) 1981-09-26

Family

ID=14441363

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10674276A Granted JPS5333050A (en) 1976-09-08 1976-09-08 Production of semiconductor element

Country Status (1)

Country Link
JP (1) JPS5333050A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000075983A1 (en) * 1999-06-08 2000-12-14 Kulicke & Soffa Investments, Inc. A method for dicing wafers with laser scribing
US6420245B1 (en) 1999-06-08 2002-07-16 Kulicke & Soffa Investments, Inc. Method for singulating semiconductor wafers
WO2002076699A1 (en) * 2001-03-27 2002-10-03 Kulicke & Soffa Investments, Inc. Laser scribing of wafers
US6562698B2 (en) 1999-06-08 2003-05-13 Kulicke & Soffa Investments, Inc. Dual laser cutting of wafers
US7547613B2 (en) 2000-09-13 2009-06-16 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US7566635B2 (en) 2002-03-12 2009-07-28 Hamamatsu Photonics K.K. Substrate dividing method
US8865566B2 (en) 2002-12-03 2014-10-21 Hamamatsu Photonics K.K. Method of cutting semiconductor substrate

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018150651A1 (en) 2017-02-15 2018-08-23 創光科学株式会社 Method for producing nitride semiconductor ultraviolet light emitting element, and nitride semiconductor ultraviolet light emitting element
US10937928B2 (en) 2017-11-09 2021-03-02 Asahi Kasei Kabushiki Kaisha Nitride semiconductor element, nitride semiconductor light emitting element, ultraviolet light emitting element

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6562698B2 (en) 1999-06-08 2003-05-13 Kulicke & Soffa Investments, Inc. Dual laser cutting of wafers
US6420245B1 (en) 1999-06-08 2002-07-16 Kulicke & Soffa Investments, Inc. Method for singulating semiconductor wafers
WO2000075983A1 (en) * 1999-06-08 2000-12-14 Kulicke & Soffa Investments, Inc. A method for dicing wafers with laser scribing
US6555447B2 (en) 1999-06-08 2003-04-29 Kulicke & Soffa Investments, Inc. Method for laser scribing of wafers
US7592238B2 (en) 2000-09-13 2009-09-22 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US7547613B2 (en) 2000-09-13 2009-06-16 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US8946592B2 (en) 2000-09-13 2015-02-03 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US7615721B2 (en) * 2000-09-13 2009-11-10 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US7626137B2 (en) 2000-09-13 2009-12-01 Hamamatsu Photonics K.K. Laser cutting by forming a modified region within an object and generating fractures
US7732730B2 (en) 2000-09-13 2010-06-08 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US10796959B2 (en) 2000-09-13 2020-10-06 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US9837315B2 (en) 2000-09-13 2017-12-05 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US8937264B2 (en) 2000-09-13 2015-01-20 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US8946591B2 (en) 2000-09-13 2015-02-03 Hamamatsu Photonics K.K. Method of manufacturing a semiconductor device formed using a substrate cutting method
WO2002076699A1 (en) * 2001-03-27 2002-10-03 Kulicke & Soffa Investments, Inc. Laser scribing of wafers
EP1255280A3 (en) * 2001-04-30 2004-01-02 Kulicke & Soffa Investments, Inc Apparatus and method for dicing semiconductor wafers
US7566635B2 (en) 2002-03-12 2009-07-28 Hamamatsu Photonics K.K. Substrate dividing method
US9142458B2 (en) 2002-03-12 2015-09-22 Hamamatsu Photonics K.K. Substrate dividing method
US9287177B2 (en) 2002-03-12 2016-03-15 Hamamatsu Photonics K.K. Substrate dividing method
US9543207B2 (en) 2002-03-12 2017-01-10 Hamamatsu Photonics K.K. Substrate dividing method
US9543256B2 (en) 2002-03-12 2017-01-10 Hamamatsu Photonics K.K. Substrate dividing method
US9548246B2 (en) 2002-03-12 2017-01-17 Hamamatsu Photonics K.K. Substrate dividing method
US9553023B2 (en) 2002-03-12 2017-01-24 Hamamatsu Photonics K.K. Substrate dividing method
US9711405B2 (en) 2002-03-12 2017-07-18 Hamamatsu Photonics K.K. Substrate dividing method
US8889525B2 (en) 2002-03-12 2014-11-18 Hamamatsu Photonics K.K. Substrate dividing method
US10068801B2 (en) 2002-03-12 2018-09-04 Hamamatsu Photonics K.K. Substrate dividing method
US10622255B2 (en) 2002-03-12 2020-04-14 Hamamatsu Photonics K.K. Substrate dividing method
US11424162B2 (en) 2002-03-12 2022-08-23 Hamamatsu Photonics K.K. Substrate dividing method
US8865566B2 (en) 2002-12-03 2014-10-21 Hamamatsu Photonics K.K. Method of cutting semiconductor substrate

Also Published As

Publication number Publication date
JPS5641173B2 (en) 1981-09-26

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