JPS5333050A - Production of semiconductor element - Google Patents
Production of semiconductor elementInfo
- Publication number
- JPS5333050A JPS5333050A JP10674276A JP10674276A JPS5333050A JP S5333050 A JPS5333050 A JP S5333050A JP 10674276 A JP10674276 A JP 10674276A JP 10674276 A JP10674276 A JP 10674276A JP S5333050 A JPS5333050 A JP S5333050A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor element
- cutting
- wafer
- laser light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Dicing (AREA)
Abstract
PURPOSE: To perform satisfactory cutting by removing the glass layer in the upper part with laser light thereafter mechanically cutting the wafer in the cutting process of Si.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10674276A JPS5333050A (en) | 1976-09-08 | 1976-09-08 | Production of semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10674276A JPS5333050A (en) | 1976-09-08 | 1976-09-08 | Production of semiconductor element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5333050A true JPS5333050A (en) | 1978-03-28 |
JPS5641173B2 JPS5641173B2 (en) | 1981-09-26 |
Family
ID=14441363
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10674276A Granted JPS5333050A (en) | 1976-09-08 | 1976-09-08 | Production of semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5333050A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000075983A1 (en) * | 1999-06-08 | 2000-12-14 | Kulicke & Soffa Investments, Inc. | A method for dicing wafers with laser scribing |
US6420245B1 (en) | 1999-06-08 | 2002-07-16 | Kulicke & Soffa Investments, Inc. | Method for singulating semiconductor wafers |
WO2002076699A1 (en) * | 2001-03-27 | 2002-10-03 | Kulicke & Soffa Investments, Inc. | Laser scribing of wafers |
US6562698B2 (en) | 1999-06-08 | 2003-05-13 | Kulicke & Soffa Investments, Inc. | Dual laser cutting of wafers |
US7547613B2 (en) | 2000-09-13 | 2009-06-16 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
US7566635B2 (en) | 2002-03-12 | 2009-07-28 | Hamamatsu Photonics K.K. | Substrate dividing method |
US8865566B2 (en) | 2002-12-03 | 2014-10-21 | Hamamatsu Photonics K.K. | Method of cutting semiconductor substrate |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018150651A1 (en) | 2017-02-15 | 2018-08-23 | 創光科学株式会社 | Method for producing nitride semiconductor ultraviolet light emitting element, and nitride semiconductor ultraviolet light emitting element |
US10937928B2 (en) | 2017-11-09 | 2021-03-02 | Asahi Kasei Kabushiki Kaisha | Nitride semiconductor element, nitride semiconductor light emitting element, ultraviolet light emitting element |
-
1976
- 1976-09-08 JP JP10674276A patent/JPS5333050A/en active Granted
Cited By (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6562698B2 (en) | 1999-06-08 | 2003-05-13 | Kulicke & Soffa Investments, Inc. | Dual laser cutting of wafers |
US6420245B1 (en) | 1999-06-08 | 2002-07-16 | Kulicke & Soffa Investments, Inc. | Method for singulating semiconductor wafers |
WO2000075983A1 (en) * | 1999-06-08 | 2000-12-14 | Kulicke & Soffa Investments, Inc. | A method for dicing wafers with laser scribing |
US6555447B2 (en) | 1999-06-08 | 2003-04-29 | Kulicke & Soffa Investments, Inc. | Method for laser scribing of wafers |
US7592238B2 (en) | 2000-09-13 | 2009-09-22 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
US7547613B2 (en) | 2000-09-13 | 2009-06-16 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
US8946592B2 (en) | 2000-09-13 | 2015-02-03 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
US7615721B2 (en) * | 2000-09-13 | 2009-11-10 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
US7626137B2 (en) | 2000-09-13 | 2009-12-01 | Hamamatsu Photonics K.K. | Laser cutting by forming a modified region within an object and generating fractures |
US7732730B2 (en) | 2000-09-13 | 2010-06-08 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
US10796959B2 (en) | 2000-09-13 | 2020-10-06 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
US9837315B2 (en) | 2000-09-13 | 2017-12-05 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
US8937264B2 (en) | 2000-09-13 | 2015-01-20 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
US8946591B2 (en) | 2000-09-13 | 2015-02-03 | Hamamatsu Photonics K.K. | Method of manufacturing a semiconductor device formed using a substrate cutting method |
WO2002076699A1 (en) * | 2001-03-27 | 2002-10-03 | Kulicke & Soffa Investments, Inc. | Laser scribing of wafers |
EP1255280A3 (en) * | 2001-04-30 | 2004-01-02 | Kulicke & Soffa Investments, Inc | Apparatus and method for dicing semiconductor wafers |
US7566635B2 (en) | 2002-03-12 | 2009-07-28 | Hamamatsu Photonics K.K. | Substrate dividing method |
US9142458B2 (en) | 2002-03-12 | 2015-09-22 | Hamamatsu Photonics K.K. | Substrate dividing method |
US9287177B2 (en) | 2002-03-12 | 2016-03-15 | Hamamatsu Photonics K.K. | Substrate dividing method |
US9543207B2 (en) | 2002-03-12 | 2017-01-10 | Hamamatsu Photonics K.K. | Substrate dividing method |
US9543256B2 (en) | 2002-03-12 | 2017-01-10 | Hamamatsu Photonics K.K. | Substrate dividing method |
US9548246B2 (en) | 2002-03-12 | 2017-01-17 | Hamamatsu Photonics K.K. | Substrate dividing method |
US9553023B2 (en) | 2002-03-12 | 2017-01-24 | Hamamatsu Photonics K.K. | Substrate dividing method |
US9711405B2 (en) | 2002-03-12 | 2017-07-18 | Hamamatsu Photonics K.K. | Substrate dividing method |
US8889525B2 (en) | 2002-03-12 | 2014-11-18 | Hamamatsu Photonics K.K. | Substrate dividing method |
US10068801B2 (en) | 2002-03-12 | 2018-09-04 | Hamamatsu Photonics K.K. | Substrate dividing method |
US10622255B2 (en) | 2002-03-12 | 2020-04-14 | Hamamatsu Photonics K.K. | Substrate dividing method |
US11424162B2 (en) | 2002-03-12 | 2022-08-23 | Hamamatsu Photonics K.K. | Substrate dividing method |
US8865566B2 (en) | 2002-12-03 | 2014-10-21 | Hamamatsu Photonics K.K. | Method of cutting semiconductor substrate |
Also Published As
Publication number | Publication date |
---|---|
JPS5641173B2 (en) | 1981-09-26 |
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