JPS57155764A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57155764A
JPS57155764A JP56041328A JP4132881A JPS57155764A JP S57155764 A JPS57155764 A JP S57155764A JP 56041328 A JP56041328 A JP 56041328A JP 4132881 A JP4132881 A JP 4132881A JP S57155764 A JPS57155764 A JP S57155764A
Authority
JP
Japan
Prior art keywords
hole
layer
single crystal
opened
polysilicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56041328A
Other languages
Japanese (ja)
Other versions
JPS6342417B2 (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56041328A priority Critical patent/JPS57155764A/en
Publication of JPS57155764A publication Critical patent/JPS57155764A/en
Publication of JPS6342417B2 publication Critical patent/JPS6342417B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout

Abstract

PURPOSE:To obtain a single-crystallized nucleus, by laser irradiation of the polysilicon over the second layer from a single crystal column inside an opened window with the hole part opened on the SiO2 film on a single crystal silicon constantly kept opened. CONSTITUTION:The SiO2 film 2 is formed with the hole 3 on the single crystal silicon substrate, and the whole surface is adhered with the first layer of silicon with the laser beam irradiation from the hole 3 to be single-crystallized to form the first LSI layer 4. Next, the upper part on a layer insulating film 9 is opened to a hole 3' to form a polysilicon layer. When laser irradiation is started from the hole 3', a single crystal silicon is formed in the hole 3 like a column to the crystalline nucleus of polysilicon. The hole 3 may be formed on a scribed line.
JP56041328A 1981-03-20 1981-03-20 Manufacture of semiconductor device Granted JPS57155764A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56041328A JPS57155764A (en) 1981-03-20 1981-03-20 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56041328A JPS57155764A (en) 1981-03-20 1981-03-20 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57155764A true JPS57155764A (en) 1982-09-25
JPS6342417B2 JPS6342417B2 (en) 1988-08-23

Family

ID=12605445

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56041328A Granted JPS57155764A (en) 1981-03-20 1981-03-20 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57155764A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5853822A (en) * 1981-09-25 1983-03-30 Toshiba Corp Laminated semiconductor device
JPS5892211A (en) * 1981-11-27 1983-06-01 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS5996761A (en) * 1982-11-25 1984-06-04 Mitsubishi Electric Corp Multi-stage semiconductor device
JPS6074553A (en) * 1983-09-30 1985-04-26 Fujitsu Ltd Semiconductor device and manufacture thereof
US5849077A (en) * 1994-04-11 1998-12-15 Texas Instruments Incorporated Process for growing epitaxial silicon in the windows of an oxide-patterned wafer
JP2013505578A (en) * 2009-09-16 2013-02-14 アプライド マテリアルズ インコーポレイテッド A method for solid-phase recrystallization of thin films using pulse train annealing.

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5853822A (en) * 1981-09-25 1983-03-30 Toshiba Corp Laminated semiconductor device
JPS5892211A (en) * 1981-11-27 1983-06-01 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS5996761A (en) * 1982-11-25 1984-06-04 Mitsubishi Electric Corp Multi-stage semiconductor device
JPS6074553A (en) * 1983-09-30 1985-04-26 Fujitsu Ltd Semiconductor device and manufacture thereof
US5849077A (en) * 1994-04-11 1998-12-15 Texas Instruments Incorporated Process for growing epitaxial silicon in the windows of an oxide-patterned wafer
JP2013505578A (en) * 2009-09-16 2013-02-14 アプライド マテリアルズ インコーポレイテッド A method for solid-phase recrystallization of thin films using pulse train annealing.

Also Published As

Publication number Publication date
JPS6342417B2 (en) 1988-08-23

Similar Documents

Publication Publication Date Title
EP0331811A3 (en) Semiconductor devices with silicon-on-insulator structures
EP0342796A3 (en) Thin-film transistor
JPS5674921A (en) Manufacturing method of semiconductor and apparatus thereof
JPS5673697A (en) Manufacture of single crystal thin film
JPS57155764A (en) Manufacture of semiconductor device
JPS57155726A (en) Manufacture of semiconductor device
JPS54161894A (en) Manufacture of semiconductor device
JPS5688317A (en) Manufacture of semiconductor device
JPS5658269A (en) Mos type semiconductor device
JPS5678155A (en) Semiconductor device and manufacture thereof
JPS575328A (en) Growing method for semiconductor crystal
JPS6425515A (en) Manufacture of semiconductor device
JPS6448410A (en) Manufacture of semiconductor device
JPS6459807A (en) Material for thin-film transistor
JPS5317068A (en) Semiconductor device and its production
JPS5768049A (en) Semiconductor device and manufacture thereof
JPS52124860A (en) Electrode formation method for semiconductor devices
JPS53129981A (en) Production of semiconductor device
JPS6455858A (en) Manufacture of semiconductor device
JPS5543847A (en) Forming method of multilayer interconnection
JPS56135972A (en) Manufacture of semiconductor device
JPS55113344A (en) Electrode wiring and its manufacture
JPS577926A (en) Manufacture of semiconductor device
JPS5461490A (en) Multi-layer wiring forming method in semiconductor device
JPS57206071A (en) Semiconductor device and manufacture thereof