JPS54152878A - Structure of semiconductor laser element and its manufacture - Google Patents
Structure of semiconductor laser element and its manufactureInfo
- Publication number
- JPS54152878A JPS54152878A JP6185278A JP6185278A JPS54152878A JP S54152878 A JPS54152878 A JP S54152878A JP 6185278 A JP6185278 A JP 6185278A JP 6185278 A JP6185278 A JP 6185278A JP S54152878 A JPS54152878 A JP S54152878A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- substrate
- convexity
- lamination
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE: To minimize the crystal defect as well as to increase the life time of the laser element by diffusing the Zn in the substrate simultaneously to cause the conversion layer into the upper layer when the PNPN structure is obtained by growing in lamination the N, P and N-type layers onto the Zn-doped P-type compound semiconductor substrate.
CONSTITUTION: The belt-type convexity is formed at the center part on the surface of Zn-doped P--type GaAs substrate 13 by the photo etching, and then N--type Ga1-XAlXAs layer 14 and P-- type GaAs layer 15 are formed in lamination by the liquid-phase epitaxial growth on the entire surface including the convexity. At this instant, the Zn contained in substrate 13 is diffused simultaneously to form P--type Ga1-XAlXAs conversion layer 18 which intrudes into layer 15 at the convexity and goes into the middle part of layer 14 at the areas other than the convexity respectively. After this, N--type Ga1-XAlXAs layer 16 and N--type GaAs layer 17 are formed again in lamination to layer 15. And N-type electrode 19 and P-type electrode 20 are coated on the upper surface of layer 17 and on the back surface of substrate 13 each. As a result, the element holding the stripe structure inside can be formed easily, at the same time minimizing the crystal defect.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6185278A JPS54152878A (en) | 1978-05-23 | 1978-05-23 | Structure of semiconductor laser element and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6185278A JPS54152878A (en) | 1978-05-23 | 1978-05-23 | Structure of semiconductor laser element and its manufacture |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54152878A true JPS54152878A (en) | 1979-12-01 |
JPS5711515B2 JPS5711515B2 (en) | 1982-03-04 |
Family
ID=13183030
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6185278A Granted JPS54152878A (en) | 1978-05-23 | 1978-05-23 | Structure of semiconductor laser element and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54152878A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5789285A (en) * | 1980-11-25 | 1982-06-03 | Sharp Corp | Semiconductor laser |
JPS5789284A (en) * | 1980-11-25 | 1982-06-03 | Sharp Corp | Semiconductor laser |
JPS57118687A (en) * | 1981-01-16 | 1982-07-23 | Sumitomo Electric Ind Ltd | Manufacture of semiconductor laser |
JPS57178396A (en) * | 1981-04-27 | 1982-11-02 | Sharp Corp | Semiconductor laser |
JPS57184278A (en) * | 1981-05-08 | 1982-11-12 | Sharp Corp | Semiconductor laser element |
JPS58193654U (en) * | 1982-06-18 | 1983-12-23 | 三洋電機株式会社 | semiconductor laser |
JPS59200485A (en) * | 1983-04-15 | 1984-11-13 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Semiconductor device and method of producing same |
JPS6042889A (en) * | 1983-08-17 | 1985-03-07 | Mitsubishi Electric Corp | Semiconductor laser |
US5518200A (en) * | 1992-04-15 | 1996-05-21 | Kaji Seisakusho Y.K. | Method of producing coreless toilet paper rolls and the coreless toilet paper produced thereby |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6941490B2 (en) * | 2016-12-27 | 2021-09-29 | 花王株式会社 | Absorbent article |
-
1978
- 1978-05-23 JP JP6185278A patent/JPS54152878A/en active Granted
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5789285A (en) * | 1980-11-25 | 1982-06-03 | Sharp Corp | Semiconductor laser |
JPS5789284A (en) * | 1980-11-25 | 1982-06-03 | Sharp Corp | Semiconductor laser |
JPS57118687A (en) * | 1981-01-16 | 1982-07-23 | Sumitomo Electric Ind Ltd | Manufacture of semiconductor laser |
JPS57178396A (en) * | 1981-04-27 | 1982-11-02 | Sharp Corp | Semiconductor laser |
JPS57184278A (en) * | 1981-05-08 | 1982-11-12 | Sharp Corp | Semiconductor laser element |
JPS58193654U (en) * | 1982-06-18 | 1983-12-23 | 三洋電機株式会社 | semiconductor laser |
JPS59200485A (en) * | 1983-04-15 | 1984-11-13 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Semiconductor device and method of producing same |
JPS6042889A (en) * | 1983-08-17 | 1985-03-07 | Mitsubishi Electric Corp | Semiconductor laser |
US5518200A (en) * | 1992-04-15 | 1996-05-21 | Kaji Seisakusho Y.K. | Method of producing coreless toilet paper rolls and the coreless toilet paper produced thereby |
Also Published As
Publication number | Publication date |
---|---|
JPS5711515B2 (en) | 1982-03-04 |
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