JPS54152878A - Structure of semiconductor laser element and its manufacture - Google Patents

Structure of semiconductor laser element and its manufacture

Info

Publication number
JPS54152878A
JPS54152878A JP6185278A JP6185278A JPS54152878A JP S54152878 A JPS54152878 A JP S54152878A JP 6185278 A JP6185278 A JP 6185278A JP 6185278 A JP6185278 A JP 6185278A JP S54152878 A JPS54152878 A JP S54152878A
Authority
JP
Japan
Prior art keywords
layer
type
substrate
convexity
lamination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6185278A
Other languages
Japanese (ja)
Other versions
JPS5711515B2 (en
Inventor
Kazuhisa Murata
Hiroshi Hayashi
Takuo Takenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP6185278A priority Critical patent/JPS54152878A/en
Publication of JPS54152878A publication Critical patent/JPS54152878A/en
Publication of JPS5711515B2 publication Critical patent/JPS5711515B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To minimize the crystal defect as well as to increase the life time of the laser element by diffusing the Zn in the substrate simultaneously to cause the conversion layer into the upper layer when the PNPN structure is obtained by growing in lamination the N, P and N-type layers onto the Zn-doped P-type compound semiconductor substrate.
CONSTITUTION: The belt-type convexity is formed at the center part on the surface of Zn-doped P--type GaAs substrate 13 by the photo etching, and then N--type Ga1-XAlXAs layer 14 and P-- type GaAs layer 15 are formed in lamination by the liquid-phase epitaxial growth on the entire surface including the convexity. At this instant, the Zn contained in substrate 13 is diffused simultaneously to form P--type Ga1-XAlXAs conversion layer 18 which intrudes into layer 15 at the convexity and goes into the middle part of layer 14 at the areas other than the convexity respectively. After this, N--type Ga1-XAlXAs layer 16 and N--type GaAs layer 17 are formed again in lamination to layer 15. And N-type electrode 19 and P-type electrode 20 are coated on the upper surface of layer 17 and on the back surface of substrate 13 each. As a result, the element holding the stripe structure inside can be formed easily, at the same time minimizing the crystal defect.
COPYRIGHT: (C)1979,JPO&Japio
JP6185278A 1978-05-23 1978-05-23 Structure of semiconductor laser element and its manufacture Granted JPS54152878A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6185278A JPS54152878A (en) 1978-05-23 1978-05-23 Structure of semiconductor laser element and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6185278A JPS54152878A (en) 1978-05-23 1978-05-23 Structure of semiconductor laser element and its manufacture

Publications (2)

Publication Number Publication Date
JPS54152878A true JPS54152878A (en) 1979-12-01
JPS5711515B2 JPS5711515B2 (en) 1982-03-04

Family

ID=13183030

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6185278A Granted JPS54152878A (en) 1978-05-23 1978-05-23 Structure of semiconductor laser element and its manufacture

Country Status (1)

Country Link
JP (1) JPS54152878A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5789285A (en) * 1980-11-25 1982-06-03 Sharp Corp Semiconductor laser
JPS5789284A (en) * 1980-11-25 1982-06-03 Sharp Corp Semiconductor laser
JPS57118687A (en) * 1981-01-16 1982-07-23 Sumitomo Electric Ind Ltd Manufacture of semiconductor laser
JPS57178396A (en) * 1981-04-27 1982-11-02 Sharp Corp Semiconductor laser
JPS57184278A (en) * 1981-05-08 1982-11-12 Sharp Corp Semiconductor laser element
JPS58193654U (en) * 1982-06-18 1983-12-23 三洋電機株式会社 semiconductor laser
JPS59200485A (en) * 1983-04-15 1984-11-13 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Semiconductor device and method of producing same
JPS6042889A (en) * 1983-08-17 1985-03-07 Mitsubishi Electric Corp Semiconductor laser
US5518200A (en) * 1992-04-15 1996-05-21 Kaji Seisakusho Y.K. Method of producing coreless toilet paper rolls and the coreless toilet paper produced thereby

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6941490B2 (en) * 2016-12-27 2021-09-29 花王株式会社 Absorbent article

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5789285A (en) * 1980-11-25 1982-06-03 Sharp Corp Semiconductor laser
JPS5789284A (en) * 1980-11-25 1982-06-03 Sharp Corp Semiconductor laser
JPS57118687A (en) * 1981-01-16 1982-07-23 Sumitomo Electric Ind Ltd Manufacture of semiconductor laser
JPS57178396A (en) * 1981-04-27 1982-11-02 Sharp Corp Semiconductor laser
JPS57184278A (en) * 1981-05-08 1982-11-12 Sharp Corp Semiconductor laser element
JPS58193654U (en) * 1982-06-18 1983-12-23 三洋電機株式会社 semiconductor laser
JPS59200485A (en) * 1983-04-15 1984-11-13 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Semiconductor device and method of producing same
JPS6042889A (en) * 1983-08-17 1985-03-07 Mitsubishi Electric Corp Semiconductor laser
US5518200A (en) * 1992-04-15 1996-05-21 Kaji Seisakusho Y.K. Method of producing coreless toilet paper rolls and the coreless toilet paper produced thereby

Also Published As

Publication number Publication date
JPS5711515B2 (en) 1982-03-04

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