JPS6457665A - Heterojunction bipolar transistor - Google Patents
Heterojunction bipolar transistorInfo
- Publication number
- JPS6457665A JPS6457665A JP21307587A JP21307587A JPS6457665A JP S6457665 A JPS6457665 A JP S6457665A JP 21307587 A JP21307587 A JP 21307587A JP 21307587 A JP21307587 A JP 21307587A JP S6457665 A JPS6457665 A JP S6457665A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- base region
- region
- external base
- bipolar transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To obtain the collector top type heterojunction bipolar transistor having an improved current amplification factor by a method wherein an external base region is formed outside an intrinsic transistor region, and a semiconductor layer having the band gap wider than that of the external base region is arranged between the external base region and a base electrode. CONSTITUTION:At least three layers selected from the first conductivity type semiconductor layers 102 and 103 which become an emitter, the second conductivity type semiconductor layer 104 which becomes a base, and the first conductivity type third semiconductor layers 105 and 106 which become a collector are laminated successively, and the forbidden band width of the part 103 contacting at least to the second semiconductor layer 104 of the first semiconductor layers 102 and 103 is made wider than that of the second semiconductor layer 104. In this kind of heterojunction bipolar transistor, the second conductivity outer base region 107 is formed outside an intrinsic transistor region, and the second conductivity semiconductor layer 108, having the band gap wider than that of the external base region 107, is arranged between the external base region 107 and a base electrode 109.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21307587A JPS6457665A (en) | 1987-08-28 | 1987-08-28 | Heterojunction bipolar transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21307587A JPS6457665A (en) | 1987-08-28 | 1987-08-28 | Heterojunction bipolar transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6457665A true JPS6457665A (en) | 1989-03-03 |
Family
ID=16633128
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21307587A Pending JPS6457665A (en) | 1987-08-28 | 1987-08-28 | Heterojunction bipolar transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6457665A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5160994A (en) * | 1990-02-19 | 1992-11-03 | Nec Corporation | Heterojunction bipolar transistor with improved base layer |
| US5420052A (en) * | 1994-04-19 | 1995-05-30 | Texas Instruments Incorporated | Method of fabricating a semiplanar heterojunction bipolar transistor |
| US5598015A (en) * | 1992-09-18 | 1997-01-28 | Hitachi, Ltd. | Hetero-junction bipolar transistor and semiconductor devices using the same |
-
1987
- 1987-08-28 JP JP21307587A patent/JPS6457665A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5160994A (en) * | 1990-02-19 | 1992-11-03 | Nec Corporation | Heterojunction bipolar transistor with improved base layer |
| US5598015A (en) * | 1992-09-18 | 1997-01-28 | Hitachi, Ltd. | Hetero-junction bipolar transistor and semiconductor devices using the same |
| US5420052A (en) * | 1994-04-19 | 1995-05-30 | Texas Instruments Incorporated | Method of fabricating a semiplanar heterojunction bipolar transistor |
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