JPS55165675A - Thyristor - Google Patents

Thyristor

Info

Publication number
JPS55165675A
JPS55165675A JP7222579A JP7222579A JPS55165675A JP S55165675 A JPS55165675 A JP S55165675A JP 7222579 A JP7222579 A JP 7222579A JP 7222579 A JP7222579 A JP 7222579A JP S55165675 A JPS55165675 A JP S55165675A
Authority
JP
Japan
Prior art keywords
region
type
layer
concentration
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7222579A
Other languages
Japanese (ja)
Inventor
Minoru Azuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7222579A priority Critical patent/JPS55165675A/en
Publication of JPS55165675A publication Critical patent/JPS55165675A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7432—Asymmetrical thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To obtain a thyristor with a good characteristics such as high voltage, high speed and less loss by specifying the concentration of injected impurity in the first and second base regions in a p-n-p-n four-layer structured thyristor. CONSTITUTION:The n<+>-type layer 11 is formed on one side of the n<->-type semiconductor substrate 10 by the diffusion method to use these for the base region, and the p<+>-type emitter region 13 is formed on the layer 11. Next the p<+>-type base region 12 is formed on the other side of the substrate 10, the n<+>-type emitter region 14 is formed in the region 12 by the diffusion method to obtain a p-n-p-n four-layer structure. After this, the cathode electrode 15 is provided to the region 14, gate electrode 16 to the region 12 and anode region 17 to the back of the region 13 respectively to obtain the thyrustor. In this configuration, the relation between the concentration CJ1 of injected impurity in the p-n junction J1 between the n<+>-type emitter region 14 and the p<+>-type base region 12 and the concentration CJ3 between the n<+>-type base layer 11 and p<+>-type emitter region 13 is specified as follows. CJ3>CJ1. Also CJ3 is made 2X10<18>atoms/cm<3> or more.
JP7222579A 1979-06-11 1979-06-11 Thyristor Pending JPS55165675A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7222579A JPS55165675A (en) 1979-06-11 1979-06-11 Thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7222579A JPS55165675A (en) 1979-06-11 1979-06-11 Thyristor

Publications (1)

Publication Number Publication Date
JPS55165675A true JPS55165675A (en) 1980-12-24

Family

ID=13483096

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7222579A Pending JPS55165675A (en) 1979-06-11 1979-06-11 Thyristor

Country Status (1)

Country Link
JP (1) JPS55165675A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57201076A (en) * 1981-06-03 1982-12-09 Fuji Electric Corp Res & Dev Ltd Photo-arc thyristor
JPS5874076A (en) * 1981-08-25 1983-05-04 ベ−・ベ−・ツエ−・アクチエンゲゼルシヤフト・ブラウン・ボヴエリ・ウント・コンパニイ Semiconductor element
JPS5896764A (en) * 1981-12-03 1983-06-08 Toshiba Corp Gate turn-off thyristor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57201076A (en) * 1981-06-03 1982-12-09 Fuji Electric Corp Res & Dev Ltd Photo-arc thyristor
JPS5874076A (en) * 1981-08-25 1983-05-04 ベ−・ベ−・ツエ−・アクチエンゲゼルシヤフト・ブラウン・ボヴエリ・ウント・コンパニイ Semiconductor element
JPS5896764A (en) * 1981-12-03 1983-06-08 Toshiba Corp Gate turn-off thyristor

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