JPS53142196A - Bipolar type semiconductor device - Google Patents
Bipolar type semiconductor deviceInfo
- Publication number
- JPS53142196A JPS53142196A JP5640977A JP5640977A JPS53142196A JP S53142196 A JPS53142196 A JP S53142196A JP 5640977 A JP5640977 A JP 5640977A JP 5640977 A JP5640977 A JP 5640977A JP S53142196 A JPS53142196 A JP S53142196A
- Authority
- JP
- Japan
- Prior art keywords
- silicon film
- semiconductor device
- type semiconductor
- bipolar type
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Logic Circuits (AREA)
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE: To elimiante the use of the diffusion layer wiring and to facilitate the micro milti-layer wiring by using the poly-carystal silicon film containing the phosphorus as the contact electrode at the N-type layer of the element and using the oxide silicon silicon film obtained by heat-oxidizing the surface of the silicon film as the insulator film against the wiring on the silicon film respectively.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5640977A JPS53142196A (en) | 1977-05-18 | 1977-05-18 | Bipolar type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5640977A JPS53142196A (en) | 1977-05-18 | 1977-05-18 | Bipolar type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53142196A true JPS53142196A (en) | 1978-12-11 |
Family
ID=13026355
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5640977A Pending JPS53142196A (en) | 1977-05-18 | 1977-05-18 | Bipolar type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53142196A (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5670648A (en) * | 1979-11-15 | 1981-06-12 | Nec Corp | Manufacture of semiconductor device |
JPS5676563A (en) * | 1979-11-29 | 1981-06-24 | Toshiba Corp | Manufacture of semiconductor integrated circuit |
JPS5676562A (en) * | 1979-11-29 | 1981-06-24 | Toshiba Corp | Manufacture of semiconductor integrated circuit |
JPS5676561A (en) * | 1979-11-29 | 1981-06-24 | Toshiba Corp | Manufacture of semiconductor integrated circuit |
JPS5688352A (en) * | 1979-12-21 | 1981-07-17 | Toshiba Corp | Manufacture of semiconductor integrated circuit |
JPS56150851A (en) * | 1980-04-22 | 1981-11-21 | Toshiba Corp | Manufacture of semiconductor integrated circuit |
JPS56150850A (en) * | 1980-04-22 | 1981-11-21 | Toshiba Corp | Manufacture of semiconductor integrated circuit |
JPS5728352A (en) * | 1980-07-28 | 1982-02-16 | Toshiba Corp | Semiconductor integrated circuit and manufacture thereof |
JPS6187375A (en) * | 1985-10-18 | 1986-05-02 | Nec Corp | Manufacture of semiconductor device |
JPS6218069A (en) * | 1985-07-16 | 1987-01-27 | Toshiba Corp | Semiconductor device |
JPH03101264A (en) * | 1990-05-07 | 1991-04-26 | Nec Corp | Manufacture of complementary field effect transistor |
-
1977
- 1977-05-18 JP JP5640977A patent/JPS53142196A/en active Pending
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5670648A (en) * | 1979-11-15 | 1981-06-12 | Nec Corp | Manufacture of semiconductor device |
JPS6217384B2 (en) * | 1979-11-29 | 1987-04-17 | Tokyo Shibaura Electric Co | |
JPS5676563A (en) * | 1979-11-29 | 1981-06-24 | Toshiba Corp | Manufacture of semiconductor integrated circuit |
JPS5676562A (en) * | 1979-11-29 | 1981-06-24 | Toshiba Corp | Manufacture of semiconductor integrated circuit |
JPS5676561A (en) * | 1979-11-29 | 1981-06-24 | Toshiba Corp | Manufacture of semiconductor integrated circuit |
JPS6217385B2 (en) * | 1979-11-29 | 1987-04-17 | Tokyo Shibaura Electric Co | |
JPS5688352A (en) * | 1979-12-21 | 1981-07-17 | Toshiba Corp | Manufacture of semiconductor integrated circuit |
JPS6217386B2 (en) * | 1979-12-21 | 1987-04-17 | Tokyo Shibaura Electric Co | |
JPS56150850A (en) * | 1980-04-22 | 1981-11-21 | Toshiba Corp | Manufacture of semiconductor integrated circuit |
JPS56150851A (en) * | 1980-04-22 | 1981-11-21 | Toshiba Corp | Manufacture of semiconductor integrated circuit |
JPH0222544B2 (en) * | 1980-04-22 | 1990-05-18 | Tokyo Shibaura Electric Co | |
JPS5728352A (en) * | 1980-07-28 | 1982-02-16 | Toshiba Corp | Semiconductor integrated circuit and manufacture thereof |
JPS6218069A (en) * | 1985-07-16 | 1987-01-27 | Toshiba Corp | Semiconductor device |
JPS6187375A (en) * | 1985-10-18 | 1986-05-02 | Nec Corp | Manufacture of semiconductor device |
JPH03101264A (en) * | 1990-05-07 | 1991-04-26 | Nec Corp | Manufacture of complementary field effect transistor |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS53142196A (en) | Bipolar type semiconductor device | |
JPS5356972A (en) | Mesa type semiconductor device | |
JPS5240071A (en) | Semiconductor device | |
JPS534469A (en) | Semiconductor device | |
JPS51145267A (en) | Manufacture of semiconductor device | |
JPS5365086A (en) | Production of semiconductor device | |
JPS53105385A (en) | Manufacture for semiconductor | |
JPS53123083A (en) | Production of semiconductor device | |
JPS5362471A (en) | Semiconductor device | |
JPS5287373A (en) | Production of semiconductor device | |
JPS53144280A (en) | Mis semiconductor device | |
JPS5380184A (en) | Manufacture of semiconductor device | |
JPS5311584A (en) | Semiconductor device | |
JPS5591866A (en) | Manufacture of semiconductor device | |
JPS5329668A (en) | Production of semiconductor device | |
JPS5211772A (en) | Semiconductor device | |
JPS52137275A (en) | Separation of semiconductor elements | |
JPS51123071A (en) | Fabrication technique of semiconductor device | |
JPS53110464A (en) | Semiconductor device | |
JPS53117963A (en) | Production of semiconductor device | |
JPS5376763A (en) | Semiconductor rectifying device | |
JPS5315756A (en) | Production of semiconductor device | |
JPS5245292A (en) | Device for integrated circuit of semiconductor | |
JPS526081A (en) | Semiconductor wafer | |
JPS5423483A (en) | Manufacture for semiconductor device |