JPS53142196A - Bipolar type semiconductor device - Google Patents

Bipolar type semiconductor device

Info

Publication number
JPS53142196A
JPS53142196A JP5640977A JP5640977A JPS53142196A JP S53142196 A JPS53142196 A JP S53142196A JP 5640977 A JP5640977 A JP 5640977A JP 5640977 A JP5640977 A JP 5640977A JP S53142196 A JPS53142196 A JP S53142196A
Authority
JP
Japan
Prior art keywords
silicon film
semiconductor device
type semiconductor
bipolar type
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5640977A
Other languages
Japanese (ja)
Inventor
Noboru Horie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5640977A priority Critical patent/JPS53142196A/en
Publication of JPS53142196A publication Critical patent/JPS53142196A/en
Pending legal-status Critical Current

Links

Landscapes

  • Logic Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE: To elimiante the use of the diffusion layer wiring and to facilitate the micro milti-layer wiring by using the poly-carystal silicon film containing the phosphorus as the contact electrode at the N-type layer of the element and using the oxide silicon silicon film obtained by heat-oxidizing the surface of the silicon film as the insulator film against the wiring on the silicon film respectively.
COPYRIGHT: (C)1978,JPO&Japio
JP5640977A 1977-05-18 1977-05-18 Bipolar type semiconductor device Pending JPS53142196A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5640977A JPS53142196A (en) 1977-05-18 1977-05-18 Bipolar type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5640977A JPS53142196A (en) 1977-05-18 1977-05-18 Bipolar type semiconductor device

Publications (1)

Publication Number Publication Date
JPS53142196A true JPS53142196A (en) 1978-12-11

Family

ID=13026355

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5640977A Pending JPS53142196A (en) 1977-05-18 1977-05-18 Bipolar type semiconductor device

Country Status (1)

Country Link
JP (1) JPS53142196A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5670648A (en) * 1979-11-15 1981-06-12 Nec Corp Manufacture of semiconductor device
JPS5676563A (en) * 1979-11-29 1981-06-24 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS5676562A (en) * 1979-11-29 1981-06-24 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS5676561A (en) * 1979-11-29 1981-06-24 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS5688352A (en) * 1979-12-21 1981-07-17 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS56150851A (en) * 1980-04-22 1981-11-21 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS56150850A (en) * 1980-04-22 1981-11-21 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS5728352A (en) * 1980-07-28 1982-02-16 Toshiba Corp Semiconductor integrated circuit and manufacture thereof
JPS6187375A (en) * 1985-10-18 1986-05-02 Nec Corp Manufacture of semiconductor device
JPS6218069A (en) * 1985-07-16 1987-01-27 Toshiba Corp Semiconductor device
JPH03101264A (en) * 1990-05-07 1991-04-26 Nec Corp Manufacture of complementary field effect transistor

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5670648A (en) * 1979-11-15 1981-06-12 Nec Corp Manufacture of semiconductor device
JPS6217384B2 (en) * 1979-11-29 1987-04-17 Tokyo Shibaura Electric Co
JPS5676563A (en) * 1979-11-29 1981-06-24 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS5676562A (en) * 1979-11-29 1981-06-24 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS5676561A (en) * 1979-11-29 1981-06-24 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS6217385B2 (en) * 1979-11-29 1987-04-17 Tokyo Shibaura Electric Co
JPS5688352A (en) * 1979-12-21 1981-07-17 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS6217386B2 (en) * 1979-12-21 1987-04-17 Tokyo Shibaura Electric Co
JPS56150850A (en) * 1980-04-22 1981-11-21 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS56150851A (en) * 1980-04-22 1981-11-21 Toshiba Corp Manufacture of semiconductor integrated circuit
JPH0222544B2 (en) * 1980-04-22 1990-05-18 Tokyo Shibaura Electric Co
JPS5728352A (en) * 1980-07-28 1982-02-16 Toshiba Corp Semiconductor integrated circuit and manufacture thereof
JPS6218069A (en) * 1985-07-16 1987-01-27 Toshiba Corp Semiconductor device
JPS6187375A (en) * 1985-10-18 1986-05-02 Nec Corp Manufacture of semiconductor device
JPH03101264A (en) * 1990-05-07 1991-04-26 Nec Corp Manufacture of complementary field effect transistor

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