JPS5352388A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5352388A
JPS5352388A JP12797476A JP12797476A JPS5352388A JP S5352388 A JPS5352388 A JP S5352388A JP 12797476 A JP12797476 A JP 12797476A JP 12797476 A JP12797476 A JP 12797476A JP S5352388 A JPS5352388 A JP S5352388A
Authority
JP
Japan
Prior art keywords
semiconductor device
stepping structure
disconnection
prevented
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12797476A
Other languages
Japanese (ja)
Inventor
Toshio Kano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP12797476A priority Critical patent/JPS5352388A/en
Publication of JPS5352388A publication Critical patent/JPS5352388A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: A Si layer is formed on the circumferential part of a substrate in order to close the groove parts of a semiconductor device having stepping structure, whereby the disconnection of electrode wirings caused by the stepping structure is prevented.
COPYRIGHT: (C)1978,JPO&Japio
JP12797476A 1976-10-25 1976-10-25 Semiconductor device Pending JPS5352388A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12797476A JPS5352388A (en) 1976-10-25 1976-10-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12797476A JPS5352388A (en) 1976-10-25 1976-10-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5352388A true JPS5352388A (en) 1978-05-12

Family

ID=14973290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12797476A Pending JPS5352388A (en) 1976-10-25 1976-10-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5352388A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59103457U (en) * 1982-12-28 1984-07-12 セイコーインスツルメンツ株式会社 Glass substrate for thin film semiconductor devices
JPS60161615A (en) * 1984-02-02 1985-08-23 Agency Of Ind Science & Technol Manufacture of soi film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59103457U (en) * 1982-12-28 1984-07-12 セイコーインスツルメンツ株式会社 Glass substrate for thin film semiconductor devices
JPS60161615A (en) * 1984-02-02 1985-08-23 Agency Of Ind Science & Technol Manufacture of soi film

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