JPS5638869A - Manufacture of mos-type semiconductor device - Google Patents
Manufacture of mos-type semiconductor deviceInfo
- Publication number
- JPS5638869A JPS5638869A JP11556679A JP11556679A JPS5638869A JP S5638869 A JPS5638869 A JP S5638869A JP 11556679 A JP11556679 A JP 11556679A JP 11556679 A JP11556679 A JP 11556679A JP S5638869 A JPS5638869 A JP S5638869A
- Authority
- JP
- Japan
- Prior art keywords
- melting
- silicon
- speed
- point metal
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 6
- 239000002184 metal Substances 0.000 abstract 6
- 229910052751 metal Inorganic materials 0.000 abstract 6
- 229910052710 silicon Inorganic materials 0.000 abstract 6
- 239000010703 silicon Substances 0.000 abstract 6
- 229910021332 silicide Inorganic materials 0.000 abstract 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 238000004299 exfoliation Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 229910052758 niobium Inorganic materials 0.000 abstract 1
- 238000000992 sputter etching Methods 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To prevent the generation of cracks and exfoliation due to the variation in temperatures by setting the speed for forming a high-melting-point metal film at the speed approximately equal to that of the silification, i.e., the reaction of the high- melting-point metal and silicon at the temperature a substrate is heated. CONSTITUTION:In the case a high-melting-point metal film 6 made of metal such as Mo, W, Ta, Nb, or the like is formed on a silicon substrate 3 having the first layer electroce wiring 5, the oxide silicon film which is spontaneously generated on the surfade of the silicon substrate 3 is completely removed by the sputter etching and the like, so that silicon and the high-melting-point metal can be reacted on all the surface of the connecting hole. Then, the substrate 3 is heated to the suitable temperature so that the attached high-melting-point metal and silicon react instantly and silicide is formed. Since the speed of forming the silicide becomes slow with the increase in the width of the silicide layer, the speed of forming the high-melting-point film becomes slow in response to the speed of forming the silicide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11556679A JPS5638869A (en) | 1979-09-07 | 1979-09-07 | Manufacture of mos-type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11556679A JPS5638869A (en) | 1979-09-07 | 1979-09-07 | Manufacture of mos-type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5638869A true JPS5638869A (en) | 1981-04-14 |
Family
ID=14665717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11556679A Pending JPS5638869A (en) | 1979-09-07 | 1979-09-07 | Manufacture of mos-type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5638869A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58138053A (en) * | 1982-02-12 | 1983-08-16 | Nec Corp | Semiconductor device and manufacture thereof |
| JPS61210662A (en) * | 1985-01-22 | 1986-09-18 | フエアチヤイルド セミコンダクタ コ−ポレ−シヨン | Semiconductor structural body |
| JPS649642A (en) * | 1987-07-02 | 1989-01-12 | Fujitsu Ltd | Manufacture of semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4998179A (en) * | 1972-12-26 | 1974-09-17 |
-
1979
- 1979-09-07 JP JP11556679A patent/JPS5638869A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4998179A (en) * | 1972-12-26 | 1974-09-17 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58138053A (en) * | 1982-02-12 | 1983-08-16 | Nec Corp | Semiconductor device and manufacture thereof |
| JPS61210662A (en) * | 1985-01-22 | 1986-09-18 | フエアチヤイルド セミコンダクタ コ−ポレ−シヨン | Semiconductor structural body |
| JPS649642A (en) * | 1987-07-02 | 1989-01-12 | Fujitsu Ltd | Manufacture of semiconductor device |
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