JPS551129A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS551129A
JPS551129A JP7387778A JP7387778A JPS551129A JP S551129 A JPS551129 A JP S551129A JP 7387778 A JP7387778 A JP 7387778A JP 7387778 A JP7387778 A JP 7387778A JP S551129 A JPS551129 A JP S551129A
Authority
JP
Japan
Prior art keywords
film
aluminium
aluminium wiring
snapping
prevented
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7387778A
Other languages
Japanese (ja)
Inventor
Takeshi Matsuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP7387778A priority Critical patent/JPS551129A/en
Publication of JPS551129A publication Critical patent/JPS551129A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To prevent the snapping-off of aluminium wiring, by producing Al2O3 on the surface of the aluminium wiring film and thereafter coating an insulating film on the Al2O3 at a temperature lower than the melting point of aluminium.
CONSTITUTION: The aluminium wiring film 4 is made on a P-type silicon substrate 1 having a field oxide film 2 and a gate oxide film 3. The Al2O3 5 is produced on the film 4 by O2 plasma. An Si3N4 layer 6 is then produced on the layer 5 by plasma reaction. The corrosion and snapping-off of the aluminium is thus prevented. Because the thermal expansion coefficient difference between the aluminium wiring film and the protective insulating film is small, the cracking of the protective film due to heat shock is prevented.
COPYRIGHT: (C)1980,JPO&Japio
JP7387778A 1978-06-19 1978-06-19 Manufacture of semiconductor device Pending JPS551129A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7387778A JPS551129A (en) 1978-06-19 1978-06-19 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7387778A JPS551129A (en) 1978-06-19 1978-06-19 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS551129A true JPS551129A (en) 1980-01-07

Family

ID=13530859

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7387778A Pending JPS551129A (en) 1978-06-19 1978-06-19 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS551129A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5986244A (en) * 1982-11-09 1984-05-18 Nec Corp Semiconductor device
JPS61255037A (en) * 1985-05-08 1986-11-12 Matsushita Electronics Corp Manufacture of semiconductor device
JPS6236843A (en) * 1985-08-10 1987-02-17 Fujitsu Ltd Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5986244A (en) * 1982-11-09 1984-05-18 Nec Corp Semiconductor device
JPS61255037A (en) * 1985-05-08 1986-11-12 Matsushita Electronics Corp Manufacture of semiconductor device
JPS6236843A (en) * 1985-08-10 1987-02-17 Fujitsu Ltd Manufacture of semiconductor device

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