JPS55153347A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS55153347A JPS55153347A JP6034379A JP6034379A JPS55153347A JP S55153347 A JPS55153347 A JP S55153347A JP 6034379 A JP6034379 A JP 6034379A JP 6034379 A JP6034379 A JP 6034379A JP S55153347 A JPS55153347 A JP S55153347A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- layer
- single crystal
- utilizing
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
Abstract
PURPOSE:To relieve thermal strain generated during heat treatment by a method wherein on a back surface of an insulating single crystal substrate which is utilized during fabrication of an SOS structured semiconductor device, a layer which is composed of a material which has nearly equal thermal expansion coefficient as a semiconductor layer on a front surface and less hardness than the substrate is formed. CONSTITUTION:On a back surface of a sapphire substrate 1, a single crystal Si layer 2 is deposited utilizing vapor phase deposition, and a back side reinforcement is applied on the substrate 1. Next thereto on the surface of the substrate 1 a single crystal Si layer 3 on which elements are to be formed is grown by vapor phase deposition in the same way. Next thereto in the layer 3 plural number of MOS integrated circuits 41, 42 etc. are formed, being isolated by a scribing lise 5 utilizing conventional method. Next thereto they are covered by a protective film such as wax etc., and utilizing mixture of fluoric and nitric acid the layer 2 which was used as a reinforcement and now becomes useless is etched away and the substrate 1 is divided into a piece of circuit after cutting it by a diamond stylus along a scribing line. By this method deterioration of circuits can not occur in spite of heat treatment during a process.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6034379A JPS55153347A (en) | 1979-05-18 | 1979-05-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6034379A JPS55153347A (en) | 1979-05-18 | 1979-05-18 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55153347A true JPS55153347A (en) | 1980-11-29 |
Family
ID=13139412
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6034379A Pending JPS55153347A (en) | 1979-05-18 | 1979-05-18 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55153347A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05166923A (en) * | 1991-12-12 | 1993-07-02 | Nichia Chem Ind Ltd | Method for cutting gallium nitride compound semiconductor wafer |
US5877094A (en) * | 1994-04-07 | 1999-03-02 | International Business Machines Corporation | Method for fabricating a silicon-on-sapphire wafer |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4832468A (en) * | 1971-08-31 | 1973-04-28 | ||
JPS5057381A (en) * | 1973-09-19 | 1975-05-19 | ||
JPS5199972A (en) * | 1975-02-28 | 1976-09-03 | Nippon Electric Co | HANDOTA ISOCHI |
-
1979
- 1979-05-18 JP JP6034379A patent/JPS55153347A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4832468A (en) * | 1971-08-31 | 1973-04-28 | ||
JPS5057381A (en) * | 1973-09-19 | 1975-05-19 | ||
JPS5199972A (en) * | 1975-02-28 | 1976-09-03 | Nippon Electric Co | HANDOTA ISOCHI |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05166923A (en) * | 1991-12-12 | 1993-07-02 | Nichia Chem Ind Ltd | Method for cutting gallium nitride compound semiconductor wafer |
US5877094A (en) * | 1994-04-07 | 1999-03-02 | International Business Machines Corporation | Method for fabricating a silicon-on-sapphire wafer |
US6238935B1 (en) | 1994-04-07 | 2001-05-29 | International Business Machines Corporation | Silicon-on-insulator wafer having conductive layer for detection with electrical sensors |
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