JPS5477588A - Heat insulating single piece semiconductor die and method of producing same - Google Patents

Heat insulating single piece semiconductor die and method of producing same

Info

Publication number
JPS5477588A
JPS5477588A JP12674978A JP12674978A JPS5477588A JP S5477588 A JPS5477588 A JP S5477588A JP 12674978 A JP12674978 A JP 12674978A JP 12674978 A JP12674978 A JP 12674978A JP S5477588 A JPS5477588 A JP S5477588A
Authority
JP
Japan
Prior art keywords
die
semiconductor
islands
forming
resistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12674978A
Other languages
Japanese (ja)
Other versions
JPS6151419B2 (en
Inventor
Daburiyuu Chiyaperu Jiyuni Roi
Mashitsuto Guroru Ai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fluke Corp
Original Assignee
John Fluke Manufacturing Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by John Fluke Manufacturing Co Inc filed Critical John Fluke Manufacturing Co Inc
Publication of JPS5477588A publication Critical patent/JPS5477588A/en
Publication of JPS6151419B2 publication Critical patent/JPS6151419B2/ja
Granted legal-status Critical Current

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    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/02—Measuring effective values, i.e. root-mean-square values
    • G01R19/03—Measuring effective values, i.e. root-mean-square values using thermoconverters
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12033—Gunn diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Pressure Sensors (AREA)
  • Element Separation (AREA)

Abstract

A process for producing thermally isolated monolithic semiconductor die and die produced by the process, plus improved apparatus using the die are disclosed. The process generally comprises the steps of: forming a desired semiconductor component or circuit in a semiconductor wafer (preferably a silicon wafer of <100> crystal orientation) having a protective layer (SiO2) on one surface; forming platinum silicide contact windows in said protective layer where external connections to the semiconductor component or circuit is necessary; forming support leads of a layer of adhesive material (which also may have resistive properties, such as Nichrome) and a layer of a structurally strong metal of high electrical conductivity and low thermal conductivity (preferably 304 stainless steel) along predetermined paths extending outwardly toward the edge of the die from said contact windows; simultaneously with the forming of the adhesive layer of said support leads, forming one or more thin film resistors in predetermined regions of said die atop said SiO2 protective layer, if desired; removing said SiO2 protective layer from a region defined by said support leads, an island or islands in which said semiconductor component or circuit and said resistors are formed and a surrounding frame; and, removing said silicon from the region between said island or islands and said frame. The resulting semiconductor die comprises a frame surrounding one or more islands in which semiconductor components or circuits are formed, and which support resistors, if included. The islands are entirely supported by the support leads extending between the frame and the islands. In addition to providing support, the support leads also provide for electrical connection to the semiconductor components or circuits and to the resistors. The semiconductor die may be mounted in a package that also forms part of the invention. The package includes a ceramic substrate having an aperture in its center and alignment mesas and ridges on one surface. The ceramic substrate is formed so as to be mounted on the metal header of a conventional semiconductor canister housing. Depending upon their specific nature the resulting die are useful in and/or improve a variety of electrical apparatus. They are particularly useful as the dual RMS sensor element of an RMS converter. They can also be formed so as to be useful as radiation sensors. Or, they can be formed so as to provide a thermal platform whose temperature is controlled and stabilized at a predetermined value. All of these dies and the improved circuits resulting from their use also form part of the invention.
JP12674978A 1977-10-17 1978-10-13 Heat insulating single piece semiconductor die and method of producing same Granted JPS5477588A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/842,972 US4257061A (en) 1977-10-17 1977-10-17 Thermally isolated monolithic semiconductor die

Publications (2)

Publication Number Publication Date
JPS5477588A true JPS5477588A (en) 1979-06-21
JPS6151419B2 JPS6151419B2 (en) 1986-11-08

Family

ID=25288725

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12674978A Granted JPS5477588A (en) 1977-10-17 1978-10-13 Heat insulating single piece semiconductor die and method of producing same

Country Status (5)

Country Link
US (1) US4257061A (en)
EP (1) EP0001707B1 (en)
JP (1) JPS5477588A (en)
CA (1) CA1117221A (en)
DE (1) DE2862105D1 (en)

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Also Published As

Publication number Publication date
US4257061A (en) 1981-03-17
EP0001707A1 (en) 1979-05-02
EP0001707B1 (en) 1982-10-13
DE2862105D1 (en) 1982-11-18
JPS6151419B2 (en) 1986-11-08
CA1117221A (en) 1982-01-26

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