JPS5477588A - Heat insulating single piece semiconductor die and method of producing same - Google Patents
Heat insulating single piece semiconductor die and method of producing sameInfo
- Publication number
- JPS5477588A JPS5477588A JP12674978A JP12674978A JPS5477588A JP S5477588 A JPS5477588 A JP S5477588A JP 12674978 A JP12674978 A JP 12674978A JP 12674978 A JP12674978 A JP 12674978A JP S5477588 A JPS5477588 A JP S5477588A
- Authority
- JP
- Japan
- Prior art keywords
- die
- semiconductor
- islands
- forming
- resistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 239000011241 protective layer Substances 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000919 ceramic Substances 0.000 abstract 2
- 239000010410 layer Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000010963 304 stainless steel Substances 0.000 abstract 1
- 229910000589 SAE 304 stainless steel Inorganic materials 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 239000012790 adhesive layer Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000009977 dual effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910001120 nichrome Inorganic materials 0.000 abstract 1
- 229910021339 platinum silicide Inorganic materials 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
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- G01—MEASURING; TESTING
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12033—Gunn diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Pressure Sensors (AREA)
- Element Separation (AREA)
Abstract
A process for producing thermally isolated monolithic semiconductor die and die produced by the process, plus improved apparatus using the die are disclosed. The process generally comprises the steps of: forming a desired semiconductor component or circuit in a semiconductor wafer (preferably a silicon wafer of <100> crystal orientation) having a protective layer (SiO2) on one surface; forming platinum silicide contact windows in said protective layer where external connections to the semiconductor component or circuit is necessary; forming support leads of a layer of adhesive material (which also may have resistive properties, such as Nichrome) and a layer of a structurally strong metal of high electrical conductivity and low thermal conductivity (preferably 304 stainless steel) along predetermined paths extending outwardly toward the edge of the die from said contact windows; simultaneously with the forming of the adhesive layer of said support leads, forming one or more thin film resistors in predetermined regions of said die atop said SiO2 protective layer, if desired; removing said SiO2 protective layer from a region defined by said support leads, an island or islands in which said semiconductor component or circuit and said resistors are formed and a surrounding frame; and, removing said silicon from the region between said island or islands and said frame. The resulting semiconductor die comprises a frame surrounding one or more islands in which semiconductor components or circuits are formed, and which support resistors, if included. The islands are entirely supported by the support leads extending between the frame and the islands. In addition to providing support, the support leads also provide for electrical connection to the semiconductor components or circuits and to the resistors. The semiconductor die may be mounted in a package that also forms part of the invention. The package includes a ceramic substrate having an aperture in its center and alignment mesas and ridges on one surface. The ceramic substrate is formed so as to be mounted on the metal header of a conventional semiconductor canister housing. Depending upon their specific nature the resulting die are useful in and/or improve a variety of electrical apparatus. They are particularly useful as the dual RMS sensor element of an RMS converter. They can also be formed so as to be useful as radiation sensors. Or, they can be formed so as to provide a thermal platform whose temperature is controlled and stabilized at a predetermined value. All of these dies and the improved circuits resulting from their use also form part of the invention.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/842,972 US4257061A (en) | 1977-10-17 | 1977-10-17 | Thermally isolated monolithic semiconductor die |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5477588A true JPS5477588A (en) | 1979-06-21 |
JPS6151419B2 JPS6151419B2 (en) | 1986-11-08 |
Family
ID=25288725
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12674978A Granted JPS5477588A (en) | 1977-10-17 | 1978-10-13 | Heat insulating single piece semiconductor die and method of producing same |
Country Status (5)
Country | Link |
---|---|
US (1) | US4257061A (en) |
EP (1) | EP0001707B1 (en) |
JP (1) | JPS5477588A (en) |
CA (1) | CA1117221A (en) |
DE (1) | DE2862105D1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020517961A (en) * | 2017-04-26 | 2020-06-18 | ノク9 アイピー アクティエボラーグ | Device and method for measuring the power value of a target |
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US4274143A (en) * | 1979-08-02 | 1981-06-16 | John Fluke Mfg. Co., Inc. | Recirculating RMS AC conversion method and apparatus |
US4551746A (en) * | 1982-10-05 | 1985-11-05 | Mayo Foundation | Leadless chip carrier apparatus providing an improved transmission line environment and improved heat dissipation |
US4847732A (en) * | 1983-09-15 | 1989-07-11 | Mosaic Systems, Inc. | Wafer and method of making same |
US4920454A (en) * | 1983-09-15 | 1990-04-24 | Mosaic Systems, Inc. | Wafer scale package system and header and method of manufacture thereof |
US4613891A (en) * | 1984-02-17 | 1986-09-23 | At&T Bell Laboratories | Packaging microminiature devices |
WO1985003804A1 (en) * | 1984-02-21 | 1985-08-29 | Mosaic Systems, Inc. | Wafer scale package system and header and method of manufacture thereof |
WO1985003805A1 (en) * | 1984-02-21 | 1985-08-29 | Mosaic Systems, Inc. | Monolithic wafer having interconnection system including programmable interconnection layer |
US4757528A (en) * | 1986-09-05 | 1988-07-12 | Harris Corporation | Thermally coupled information transmission across electrical isolation boundaries |
JPS6376279A (en) * | 1986-09-19 | 1988-04-06 | 株式会社日立製作所 | Connector and semiconductor package construction using the same the same |
US4782028A (en) * | 1987-08-27 | 1988-11-01 | Santa Barbara Research Center | Process methodology for two-sided fabrication of devices on thinned silicon |
US4980586A (en) * | 1987-10-07 | 1990-12-25 | Tektronix, Inc. | Digital integrated circuit propagation delay regulator |
US4892842A (en) * | 1987-10-29 | 1990-01-09 | Tektronix, Inc. | Method of treating an integrated circuit |
US4918505A (en) * | 1988-07-19 | 1990-04-17 | Tektronix, Inc. | Method of treating an integrated circuit to provide a temperature sensor that is integral therewith |
US5231877A (en) * | 1990-12-12 | 1993-08-03 | University Of Cincinnati | Solid state microanemometer |
DE4117133C1 (en) * | 1991-05-25 | 1992-11-12 | Ladislav Dr. Grno | Thermoelectric power measuring converter - has resistance electronically controllable by instantaneous value of input signal and temp. sensor on common support heat-insulated from surroundings |
JPH06151685A (en) * | 1992-11-04 | 1994-05-31 | Mitsubishi Electric Corp | Mcp semiconductor device |
DE4416980C2 (en) * | 1994-05-13 | 1998-04-09 | Bosch Gmbh Robert | Arrangement for contacting planar high-frequency lines and method for producing an arrangement for contacting planar high-frequency lines |
WO1997005493A1 (en) * | 1995-07-25 | 1997-02-13 | Applied Precision S.R.O. | Thermoelectric measurement converter |
DE19527226A1 (en) * | 1995-07-26 | 1997-01-30 | Applied Precision S R O | Thermo-electric measurement converter - has electronically controlled resistance and temperature sensor and sums input signal and sensor signal to form output signal |
US5783854A (en) * | 1996-10-15 | 1998-07-21 | Honeywell Inc. | Thermally isolated integrated circuit |
JP2000036501A (en) * | 1998-05-12 | 2000-02-02 | Sharp Corp | Die bond device |
US6510503B2 (en) | 1998-07-27 | 2003-01-21 | Mosaid Technologies Incorporated | High bandwidth memory interface |
US6335548B1 (en) * | 1999-03-15 | 2002-01-01 | Gentex Corporation | Semiconductor radiation emitter package |
US6521916B2 (en) * | 1999-03-15 | 2003-02-18 | Gentex Corporation | Radiation emitter device having an encapsulant with different zones of thermal conductivity |
US6639360B2 (en) | 2001-01-31 | 2003-10-28 | Gentex Corporation | High power radiation emitter device and heat dissipating package for electronic components |
US7075112B2 (en) * | 2001-01-31 | 2006-07-11 | Gentex Corporation | High power radiation emitter device and heat dissipating package for electronic components |
JP3964263B2 (en) * | 2002-05-17 | 2007-08-22 | 株式会社デンソー | Blind via hole filling method and through electrode forming method |
US20040147056A1 (en) * | 2003-01-29 | 2004-07-29 | Mckinnell James C. | Micro-fabricated device and method of making |
US20050183589A1 (en) * | 2004-02-19 | 2005-08-25 | Salmon Peter C. | Imprinting tools and methods for printed circuit boards and assemblies |
US8070329B1 (en) | 2005-02-11 | 2011-12-06 | Gentex Corporation | Light emitting optical systems and assemblies and systems incorporating the same |
US20070176768A1 (en) * | 2006-01-31 | 2007-08-02 | Scott Jonathan B | Thermocouple microwave power sensor |
CN100392851C (en) * | 2006-04-12 | 2008-06-04 | 江苏长电科技股份有限公司 | Semiconductor component plane button type ultra-thin packed substrate and making method thereof |
CN100392852C (en) * | 2006-04-12 | 2008-06-04 | 江苏长电科技股份有限公司 | Electronic component plane button ultra-thin packed substrate and making method thereof |
BRPI0820148A2 (en) * | 2008-01-31 | 2015-05-12 | Hewlett Packard Development Co | Openings system, computer system and method for machining openings |
DE102008036837A1 (en) | 2008-08-07 | 2010-02-18 | Epcos Ag | Sensor device and method of manufacture |
US9134100B2 (en) * | 2009-04-13 | 2015-09-15 | Ensign-Bickford Aerospace & Defense Company | Surface mountable semiconductor bridge die |
EP2629084B1 (en) * | 2012-02-17 | 2018-05-02 | ams international AG | Integrated circuit and manufacturing method |
CN104279529B (en) * | 2014-09-24 | 2017-12-15 | 惠州市英吉尔光电科技有限公司 | A kind of LED compact power supplies |
DE102017208147B4 (en) * | 2017-05-15 | 2021-12-30 | Schweizer Electronic Ag | Electronic component and circuit board with this electronic component |
CN112992849B (en) * | 2021-02-05 | 2022-06-03 | 长鑫存储技术有限公司 | Packaging substrate and semiconductor structure with same |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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NL134170C (en) * | 1963-12-17 | 1900-01-01 | ||
US3395265A (en) * | 1965-07-26 | 1968-07-30 | Teledyne Inc | Temperature controlled microcircuit |
US3493820A (en) * | 1966-12-01 | 1970-02-03 | Raytheon Co | Airgap isolated semiconductor device |
DE1937755A1 (en) * | 1968-07-26 | 1970-02-12 | Signetics Corp | Semiconductor assembly and device with jacketed carrier line structure and method for manufacturing the same |
NL6910274A (en) * | 1969-07-04 | 1971-01-06 | ||
NL7215200A (en) * | 1972-11-10 | 1974-05-14 | ||
US3881181A (en) * | 1973-02-22 | 1975-04-29 | Rca Corp | Semiconductor temperature sensor |
NL7408033A (en) * | 1974-06-17 | 1975-12-19 | Philips Nv | CIRCUIT FOR MEASURING THE EFFECTIVE VALUE OF AN ELECTRICAL SIGNAL. |
-
1977
- 1977-10-17 US US05/842,972 patent/US4257061A/en not_active Expired - Lifetime
-
1978
- 1978-10-02 CA CA000312466A patent/CA1117221A/en not_active Expired
- 1978-10-13 JP JP12674978A patent/JPS5477588A/en active Granted
- 1978-10-17 EP EP78300510A patent/EP0001707B1/en not_active Expired
- 1978-10-17 DE DE7878300510T patent/DE2862105D1/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020517961A (en) * | 2017-04-26 | 2020-06-18 | ノク9 アイピー アクティエボラーグ | Device and method for measuring the power value of a target |
Also Published As
Publication number | Publication date |
---|---|
US4257061A (en) | 1981-03-17 |
EP0001707A1 (en) | 1979-05-02 |
EP0001707B1 (en) | 1982-10-13 |
DE2862105D1 (en) | 1982-11-18 |
JPS6151419B2 (en) | 1986-11-08 |
CA1117221A (en) | 1982-01-26 |
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