JPS5635410A - Method and device for manufacturing semiconductor device - Google Patents

Method and device for manufacturing semiconductor device

Info

Publication number
JPS5635410A
JPS5635410A JP11020079A JP11020079A JPS5635410A JP S5635410 A JPS5635410 A JP S5635410A JP 11020079 A JP11020079 A JP 11020079A JP 11020079 A JP11020079 A JP 11020079A JP S5635410 A JPS5635410 A JP S5635410A
Authority
JP
Japan
Prior art keywords
tube
gas
vessel
phase
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11020079A
Other languages
Japanese (ja)
Inventor
Yorimitsu Nishitani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11020079A priority Critical patent/JPS5635410A/en
Publication of JPS5635410A publication Critical patent/JPS5635410A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02549—Antimonides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To avoid the generation of oxides and contamination, by continuously effecting liquid-phase growth and gas-phase growth in arbitrary order inside an identical tube when growing plural epitaxial layers on a semiconductor substrate. CONSTITUTION:A vessel 3 containing a source substance 4 for gas-phase epitaxial growth is set in a reaction tube 5. The substance 4 is heated by a heater 7 surrounding the peripheral surface of the tube 5. A liquid-phase epitaxial growing unit 2 is set at a distance from the vessel 3 in the tube 5. A semiconductor substrate 1 is housed in the recess of a support board provided on the growing unit 2. Containers for liquid-phase growing solutions 9, 9', which are slidably provided on the support board, are heated by a heater 8 installed outside the tube 5. Inlet pipes 24, 27 for feeding carrier gas and another inlet pipe 16 for feeding dopant gas are provided on the inlet side of the vessel 3. A carrier gas inlet/outlet pipe 6 is provided between the vessel and the unit 2. Another carrier gas inlet/outlet pipe 10 is installed downstream to the unit 2. Plural layers are thus grown on the substrate 1 so that gas-phase growth is the first and liquid-phase growth is the second or in the reverse order.
JP11020079A 1979-08-31 1979-08-31 Method and device for manufacturing semiconductor device Pending JPS5635410A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11020079A JPS5635410A (en) 1979-08-31 1979-08-31 Method and device for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11020079A JPS5635410A (en) 1979-08-31 1979-08-31 Method and device for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
JPS5635410A true JPS5635410A (en) 1981-04-08

Family

ID=14529579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11020079A Pending JPS5635410A (en) 1979-08-31 1979-08-31 Method and device for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPS5635410A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4902356A (en) * 1988-01-21 1990-02-20 Mitsubishi Monsanto Chemical Company Epitaxial substrate for high-intensity led, and method of manufacturing same
US4921817A (en) * 1987-07-09 1990-05-01 Mitsubishi Monsanto Chemical Co. Substrate for high-intensity led, and method of epitaxially growing same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5286059A (en) * 1976-01-13 1977-07-16 Nippon Telegr & Teleph Corp <Ntt> Process for production and apparatus used for process of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5286059A (en) * 1976-01-13 1977-07-16 Nippon Telegr & Teleph Corp <Ntt> Process for production and apparatus used for process of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4921817A (en) * 1987-07-09 1990-05-01 Mitsubishi Monsanto Chemical Co. Substrate for high-intensity led, and method of epitaxially growing same
US4902356A (en) * 1988-01-21 1990-02-20 Mitsubishi Monsanto Chemical Company Epitaxial substrate for high-intensity led, and method of manufacturing same

Similar Documents

Publication Publication Date Title
US4596208A (en) CVD reaction chamber
GB1346938A (en) Reactors and method of manufacture of semiconductor devices using such a reactor
JPS5635410A (en) Method and device for manufacturing semiconductor device
JPS5694751A (en) Vapor growth method
JPS59223294A (en) Vapor phase growth device
JPS5645899A (en) Vapor phase growing method for gallium nitride
CN100355028C (en) Vapor phase epitaxy device
EP0374740A3 (en) Semiconductor wafer carrier design
JPS54106081A (en) Growth method in vapor phase
JPS5713746A (en) Vapor-phase growing apparatus
JPS5320763A (en) Crystal growing method and apparatus
JPS5493357A (en) Growing method of polycrystal silicon
JPS57123895A (en) Vapor-phase epitaxial growing apparatus
JPS53116775A (en) Vapor phase growth apparatus of semiconductor crystals
JPS57200292A (en) Vapor-phase epitaxial growth apparatus
JPS59132122A (en) Vapor-phase crystal growth method
UA8064A (en) METHOD FOR GROWING PROCESS FROM GaAs EPITAXIAL LAYER DIODE P-I-N STRUCTURES
JPS622524A (en) Vapor-phase growth device
JPH0665209B2 (en) Semiconductor manufacturing equipment by vapor phase growth
JP2665229B2 (en) Semiconductor manufacturing equipment
JPS59111323A (en) Vapor phase growth device
JPS63313825A (en) Vapor phase epitaxy method
JPS568814A (en) Epitaxial growth of silicon under reduced pressure
JPS62247521A (en) Organic metal compound accommodating unit
JPS5635413A (en) Method of etching semiconductor crystal layer at gas phase