UA8064A - METHOD FOR GROWING PROCESS FROM GaAs EPITAXIAL LAYER DIODE P-I-N STRUCTURES - Google Patents

METHOD FOR GROWING PROCESS FROM GaAs EPITAXIAL LAYER DIODE P-I-N STRUCTURES

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Publication number
UA8064A
UA8064A UA95115055A UA95115055A UA8064A UA 8064 A UA8064 A UA 8064A UA 95115055 A UA95115055 A UA 95115055A UA 95115055 A UA95115055 A UA 95115055A UA 8064 A UA8064 A UA 8064A
Authority
UA
Ukraine
Prior art keywords
gaas
epitaxial layer
growing process
structures
water vapour
Prior art date
Application number
UA95115055A
Other languages
Russian (ru)
Ukrainian (uk)
Inventor
Віктор Євгенович Войтович
Виктор Евгеньевич Войтович
Сергій Михайлович Поліщук
Сергей Михайлович Полищук
Ростислав Леонтійович Hагорний
Original Assignee
Мале Приватне Підприємство-Фірма "Авт-Україна"
Малое частное предприятие-фирма "АВТ-Украина"
Актсіальтс "Алькор"
Актсиальтс "Алькор"
Ростислав Леонтійович Hагорний
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Мале Приватне Підприємство-Фірма "Авт-Україна", Малое частное предприятие-фирма "АВТ-Украина", Актсіальтс "Алькор", Актсиальтс "Алькор", Ростислав Леонтійович Hагорний filed Critical Мале Приватне Підприємство-Фірма "Авт-Україна"
Priority to UA95115055A priority Critical patent/UA8064A/en
Publication of UA8064A publication Critical patent/UA8064A/en

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  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

The invention relates to electron-hole junction semiconductor device technology on the base of АшВу connections, specifically to growing process from GaAs lightly-doped epitaxial layer liquid phase forming p-i-n structure on GaAs monocrystals substrates, in one manufacturing process. The method consists in heating GaAs solution-melt in a quartz reactor and a quartz coffin in hydrogen ambient comprising water vapour under control in heating operation of the temperature and time of execution of processing procedures, hydrogen flow velocity and concentration of water vapour in it.
UA95115055A 1995-11-29 1995-11-29 METHOD FOR GROWING PROCESS FROM GaAs EPITAXIAL LAYER DIODE P-I-N STRUCTURES UA8064A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
UA95115055A UA8064A (en) 1995-11-29 1995-11-29 METHOD FOR GROWING PROCESS FROM GaAs EPITAXIAL LAYER DIODE P-I-N STRUCTURES

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
UA95115055A UA8064A (en) 1995-11-29 1995-11-29 METHOD FOR GROWING PROCESS FROM GaAs EPITAXIAL LAYER DIODE P-I-N STRUCTURES

Publications (1)

Publication Number Publication Date
UA8064A true UA8064A (en) 1995-12-26

Family

ID=74555360

Family Applications (1)

Application Number Title Priority Date Filing Date
UA95115055A UA8064A (en) 1995-11-29 1995-11-29 METHOD FOR GROWING PROCESS FROM GaAs EPITAXIAL LAYER DIODE P-I-N STRUCTURES

Country Status (1)

Country Link
UA (1) UA8064A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2668661C2 (en) * 2016-10-27 2018-10-02 Федеральное государственное бюджетное научное учреждение "Федеральный исследовательский центр Институт прикладной физики Российской академии наук" METHOD OF PRODUCING MULTILAYER EPITAXIAL P-I-N STRUCTURE BASED ON GaAs-GaAlAs COMPOUNDS BY METHOD OF LIQUID-PHASE EPITAXY

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2668661C2 (en) * 2016-10-27 2018-10-02 Федеральное государственное бюджетное научное учреждение "Федеральный исследовательский центр Институт прикладной физики Российской академии наук" METHOD OF PRODUCING MULTILAYER EPITAXIAL P-I-N STRUCTURE BASED ON GaAs-GaAlAs COMPOUNDS BY METHOD OF LIQUID-PHASE EPITAXY

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