UA8064A - METHOD FOR GROWING PROCESS FROM GaAs EPITAXIAL LAYER DIODE P-I-N STRUCTURES - Google Patents
METHOD FOR GROWING PROCESS FROM GaAs EPITAXIAL LAYER DIODE P-I-N STRUCTURESInfo
- Publication number
- UA8064A UA8064A UA95115055A UA95115055A UA8064A UA 8064 A UA8064 A UA 8064A UA 95115055 A UA95115055 A UA 95115055A UA 95115055 A UA95115055 A UA 95115055A UA 8064 A UA8064 A UA 8064A
- Authority
- UA
- Ukraine
- Prior art keywords
- gaas
- epitaxial layer
- growing process
- structures
- water vapour
- Prior art date
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
The invention relates to electron-hole junction semiconductor device technology on the base of АшВу connections, specifically to growing process from GaAs lightly-doped epitaxial layer liquid phase forming p-i-n structure on GaAs monocrystals substrates, in one manufacturing process. The method consists in heating GaAs solution-melt in a quartz reactor and a quartz coffin in hydrogen ambient comprising water vapour under control in heating operation of the temperature and time of execution of processing procedures, hydrogen flow velocity and concentration of water vapour in it.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
UA95115055A UA8064A (en) | 1995-11-29 | 1995-11-29 | METHOD FOR GROWING PROCESS FROM GaAs EPITAXIAL LAYER DIODE P-I-N STRUCTURES |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
UA95115055A UA8064A (en) | 1995-11-29 | 1995-11-29 | METHOD FOR GROWING PROCESS FROM GaAs EPITAXIAL LAYER DIODE P-I-N STRUCTURES |
Publications (1)
Publication Number | Publication Date |
---|---|
UA8064A true UA8064A (en) | 1995-12-26 |
Family
ID=74555360
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
UA95115055A UA8064A (en) | 1995-11-29 | 1995-11-29 | METHOD FOR GROWING PROCESS FROM GaAs EPITAXIAL LAYER DIODE P-I-N STRUCTURES |
Country Status (1)
Country | Link |
---|---|
UA (1) | UA8064A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2668661C2 (en) * | 2016-10-27 | 2018-10-02 | Федеральное государственное бюджетное научное учреждение "Федеральный исследовательский центр Институт прикладной физики Российской академии наук" | METHOD OF PRODUCING MULTILAYER EPITAXIAL P-I-N STRUCTURE BASED ON GaAs-GaAlAs COMPOUNDS BY METHOD OF LIQUID-PHASE EPITAXY |
-
1995
- 1995-11-29 UA UA95115055A patent/UA8064A/en unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2668661C2 (en) * | 2016-10-27 | 2018-10-02 | Федеральное государственное бюджетное научное учреждение "Федеральный исследовательский центр Институт прикладной физики Российской академии наук" | METHOD OF PRODUCING MULTILAYER EPITAXIAL P-I-N STRUCTURE BASED ON GaAs-GaAlAs COMPOUNDS BY METHOD OF LIQUID-PHASE EPITAXY |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW350143B (en) | Method for producing semiconductor device | |
US6562720B2 (en) | Apparatus and method for surface finishing a silicon film | |
PL1682701T3 (en) | LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GaN SUBSTRATE AND PROCESS FOR MAKING THE SAME | |
TW325601B (en) | Process of manufacturing thin film semiconductor | |
GB1275891A (en) | Improvements in or relating to the manufacture of monocrystalline silicon layers | |
EP0651431A3 (en) | Method of crystallizing a silicone layer and semiconductor devices obtained by using the method | |
JPS55151329A (en) | Fabricating method of semiconductor device | |
EP0253611A3 (en) | Method of epitaxially growing gallium arsenide on silicon | |
UA8064A (en) | METHOD FOR GROWING PROCESS FROM GaAs EPITAXIAL LAYER DIODE P-I-N STRUCTURES | |
JPH02235327A (en) | Device and method of growing semiconductor | |
Ayers et al. | The epitaxy of germanium on gallium arsenide | |
JPS5737827A (en) | Manufacture of semiconductor device | |
JPS5434676A (en) | Vapor growth method and apparatus for high-purity semiconductor layer | |
US3386857A (en) | Method of manufacturing semiconductor devices such as transistors and diodes and semiconductor devices manufactured by such methods | |
JPS56164523A (en) | Vapor phase growth of semiconductor | |
JP2525348B2 (en) | Vapor growth method and apparatus | |
JPS5710982A (en) | Amorphous semiconductor thin film | |
ES2004276A6 (en) | Semiconductor device including an epitaxial layer on a lattice-mismatched single crystal substrate. | |
TW344869B (en) | Etching method, crystal growing method, and process for producing semiconductor device | |
JPS5748227A (en) | Manufacture of semiconductor device | |
JPH02152221A (en) | Manufacture of soi substrate | |
JPS56161832A (en) | Gaseous phase treatment device | |
Yamazaki et al. | Disilane photo-epitaxy for VLSI | |
JPH02146165U (en) | ||
JPH07226381A (en) | Organic metal vapor growth device |