JPS5635410A - Method and device for manufacturing semiconductor device - Google Patents

Method and device for manufacturing semiconductor device

Info

Publication number
JPS5635410A
JPS5635410A JP11020079A JP11020079A JPS5635410A JP S5635410 A JPS5635410 A JP S5635410A JP 11020079 A JP11020079 A JP 11020079A JP 11020079 A JP11020079 A JP 11020079A JP S5635410 A JPS5635410 A JP S5635410A
Authority
JP
Japan
Prior art keywords
tube
gas
vessel
phase
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11020079A
Other languages
English (en)
Inventor
Yorimitsu Nishitani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11020079A priority Critical patent/JPS5635410A/ja
Publication of JPS5635410A publication Critical patent/JPS5635410A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02549—Antimonides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP11020079A 1979-08-31 1979-08-31 Method and device for manufacturing semiconductor device Pending JPS5635410A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11020079A JPS5635410A (en) 1979-08-31 1979-08-31 Method and device for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11020079A JPS5635410A (en) 1979-08-31 1979-08-31 Method and device for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
JPS5635410A true JPS5635410A (en) 1981-04-08

Family

ID=14529579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11020079A Pending JPS5635410A (en) 1979-08-31 1979-08-31 Method and device for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPS5635410A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4902356A (en) * 1988-01-21 1990-02-20 Mitsubishi Monsanto Chemical Company Epitaxial substrate for high-intensity led, and method of manufacturing same
US4921817A (en) * 1987-07-09 1990-05-01 Mitsubishi Monsanto Chemical Co. Substrate for high-intensity led, and method of epitaxially growing same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5286059A (en) * 1976-01-13 1977-07-16 Nippon Telegr & Teleph Corp <Ntt> Process for production and apparatus used for process of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5286059A (en) * 1976-01-13 1977-07-16 Nippon Telegr & Teleph Corp <Ntt> Process for production and apparatus used for process of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4921817A (en) * 1987-07-09 1990-05-01 Mitsubishi Monsanto Chemical Co. Substrate for high-intensity led, and method of epitaxially growing same
US4902356A (en) * 1988-01-21 1990-02-20 Mitsubishi Monsanto Chemical Company Epitaxial substrate for high-intensity led, and method of manufacturing same

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