JPS5635410A - Method and device for manufacturing semiconductor device - Google Patents
Method and device for manufacturing semiconductor deviceInfo
- Publication number
- JPS5635410A JPS5635410A JP11020079A JP11020079A JPS5635410A JP S5635410 A JPS5635410 A JP S5635410A JP 11020079 A JP11020079 A JP 11020079A JP 11020079 A JP11020079 A JP 11020079A JP S5635410 A JPS5635410 A JP S5635410A
- Authority
- JP
- Japan
- Prior art keywords
- tube
- gas
- vessel
- phase
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02549—Antimonides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11020079A JPS5635410A (en) | 1979-08-31 | 1979-08-31 | Method and device for manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11020079A JPS5635410A (en) | 1979-08-31 | 1979-08-31 | Method and device for manufacturing semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5635410A true JPS5635410A (en) | 1981-04-08 |
Family
ID=14529579
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11020079A Pending JPS5635410A (en) | 1979-08-31 | 1979-08-31 | Method and device for manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5635410A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4902356A (en) * | 1988-01-21 | 1990-02-20 | Mitsubishi Monsanto Chemical Company | Epitaxial substrate for high-intensity led, and method of manufacturing same |
US4921817A (en) * | 1987-07-09 | 1990-05-01 | Mitsubishi Monsanto Chemical Co. | Substrate for high-intensity led, and method of epitaxially growing same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5286059A (en) * | 1976-01-13 | 1977-07-16 | Nippon Telegr & Teleph Corp <Ntt> | Process for production and apparatus used for process of semiconductor device |
-
1979
- 1979-08-31 JP JP11020079A patent/JPS5635410A/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5286059A (en) * | 1976-01-13 | 1977-07-16 | Nippon Telegr & Teleph Corp <Ntt> | Process for production and apparatus used for process of semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4921817A (en) * | 1987-07-09 | 1990-05-01 | Mitsubishi Monsanto Chemical Co. | Substrate for high-intensity led, and method of epitaxially growing same |
US4902356A (en) * | 1988-01-21 | 1990-02-20 | Mitsubishi Monsanto Chemical Company | Epitaxial substrate for high-intensity led, and method of manufacturing same |
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