JPS5635413A - Method of etching semiconductor crystal layer at gas phase - Google Patents
Method of etching semiconductor crystal layer at gas phaseInfo
- Publication number
- JPS5635413A JPS5635413A JP11057379A JP11057379A JPS5635413A JP S5635413 A JPS5635413 A JP S5635413A JP 11057379 A JP11057379 A JP 11057379A JP 11057379 A JP11057379 A JP 11057379A JP S5635413 A JPS5635413 A JP S5635413A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- gas phase
- point
- source metal
- upstream
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
- H01L21/02661—In-situ cleaning
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To make etching uniform, by placing a source metal element at an upstream point in a reaction tube of quartz and a crystal substrate at a downstream point in the tube and setting the temperature of the heated substrate low at its upstream portion and high at its downstream portion when etching the surface of the substrate at gas phase before growing operation. CONSTITUTION:A source metal Ga, from which a grown film is made, is placed at an upstream point in a reaction tube of quartz around which an electric furnace 12 is installed. A plurality of crystal substrates 17 set on a substrate carrier 18 are placed at a downstream point in the reaction tube. The interior of the tube is heated at a prescribed temperature to educe the source metal Ga on the substrates 17. Before the eduction work, the surface of each substrate 17 is etched at gas phase in such a manner that mixed gas of AsCl or HCl with H2 is introduced through an inlet pipe 14 inserted to the vicinity of the substrate 17 and mixed gas of AsCl with H2 is introduced through another inlet pipe 15 located not near the substrate and the temperature of the upstream portion of the substrate is set slightly higher than that of its downstream portion.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11057379A JPS5635413A (en) | 1979-08-29 | 1979-08-29 | Method of etching semiconductor crystal layer at gas phase |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11057379A JPS5635413A (en) | 1979-08-29 | 1979-08-29 | Method of etching semiconductor crystal layer at gas phase |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5635413A true JPS5635413A (en) | 1981-04-08 |
Family
ID=14539253
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11057379A Pending JPS5635413A (en) | 1979-08-29 | 1979-08-29 | Method of etching semiconductor crystal layer at gas phase |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5635413A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63271935A (en) * | 1987-04-28 | 1988-11-09 | Matsushita Electric Ind Co Ltd | Plasma processor |
-
1979
- 1979-08-29 JP JP11057379A patent/JPS5635413A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63271935A (en) * | 1987-04-28 | 1988-11-09 | Matsushita Electric Ind Co Ltd | Plasma processor |
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