GB1453341A - Charge-coupled linear imaging device - Google Patents
Charge-coupled linear imaging deviceInfo
- Publication number
- GB1453341A GB1453341A GB271074A GB271074A GB1453341A GB 1453341 A GB1453341 A GB 1453341A GB 271074 A GB271074 A GB 271074A GB 271074 A GB271074 A GB 271074A GB 1453341 A GB1453341 A GB 1453341A
- Authority
- GB
- United Kingdom
- Prior art keywords
- elements
- shift registers
- charge
- electrodes
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000003384 imaging method Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 2
- 230000005855 radiation Effects 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76833—Buried channel CCD
- H01L29/7685—Three-Phase CCD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14825—Linear CCD imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76833—Buried channel CCD
- H01L29/76858—Four-Phase CCD
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/701—Line sensors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Electromagnetism (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
1453341 Semi-conductor imaging devices FAIRCHILD CAMERA & INSTRUMENT CORP 21 Jan 1974 [22 March 1973] 02710/74 Heading H1K [Also in Division H4] A linear imaging array comprises a line of radiation-sensitive elements 32 including a plurality of transparent electrodes formed on the top surface of a layer of insulation 15 formed over a semi-conductor material 11, first and second CCD shift registers 34 located on opposite sides of the elements 32 each of the shift registers being covered with an opaque material, and an arrangement whereby charge packets generated in the line of elements 32 are transferred to appropriate positions in the first and second shift registers 34 and are then shifted along the respective registers to the ends thereof, where they may be read-off and utilized. Preferably the radiation-sensitive elements 32 also comprise charge coupled devices. The semiconductor substrate 11 may have a buried channel 14 and adjacent photosensitive elements 32 in the line are separated by a serpentine channel stop 31, Fig. 2a (not shown), such that the charge pockets formed in adjacent elements 32 are simultaneously transferred to opposite shift registers, by appropriately controlling the voltage on the transfer gates 33a and 33b and on the respective shift register electrodes. The charge packets transferred to the first and second shift registers from the elements 32 are then shifted in sequence down each shift register into a third shift register 37, whose electrodes are controlled by a clock signal having a frequency twice that controlling the electrodes of the first two shift registers. The charge packets thus shifted to the end of shift register 37 through diode 38 and output MOS transistors 39, 40 produce an output signal representative of the light image input to the line of elements 32. Figs. 4 and 5 (not shown) illustrate alternative output arrangements, and Fig. 6 (not shown) indicates the particular voltage signals to be applied to the electrodes to obtain the desired output. The charge couple devices of the light sensitive elements and the shift registers and the output diode and transistors may be fabricated in a single monolithic integrated circuit chip.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US34375973A | 1973-03-22 | 1973-03-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1453341A true GB1453341A (en) | 1976-10-20 |
Family
ID=23347531
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB271074A Expired GB1453341A (en) | 1973-03-22 | 1974-01-21 | Charge-coupled linear imaging device |
Country Status (4)
Country | Link |
---|---|
JP (2) | JPS49123722A (en) |
CA (1) | CA1020656A (en) |
GB (1) | GB1453341A (en) |
HK (1) | HK6480A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2416602A1 (en) * | 1978-02-06 | 1979-08-31 | Fairchild Camera Instr Co | CCD with charge packet memories - uses charges representing illumination and has transmission devices and signal processing unit |
EP0068786A2 (en) * | 1981-06-24 | 1983-01-05 | Plessey Overseas Limited | Improvements in or relating to detector arrays |
GB2125651A (en) * | 1982-08-18 | 1984-03-07 | Eastman Kodak Co | Image sensors for rangefinders |
EP0109445A1 (en) * | 1982-05-21 | 1984-05-30 | Sony Corporation | Charge transfer devices for multiplexing signals |
FR2685152A1 (en) * | 1991-11-27 | 1993-06-18 | Eev Ltd | LOAD COUPLING DEVICE. |
US5528642A (en) * | 1993-01-21 | 1996-06-18 | Sony Corporation | Solid-state imaging device with fast clock speed for improved image quality |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57190471A (en) * | 1981-05-19 | 1982-11-24 | Fuji Photo Film Co Ltd | Two-dimensional solid state image pickup device |
-
1974
- 1974-01-15 CA CA190,114A patent/CA1020656A/en not_active Expired
- 1974-01-21 GB GB271074A patent/GB1453341A/en not_active Expired
- 1974-03-20 JP JP49031077A patent/JPS49123722A/ja active Pending
-
1980
- 1980-02-28 HK HK64/80A patent/HK6480A/en unknown
- 1980-05-12 JP JP1980064876U patent/JPS55171169U/ja active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2416602A1 (en) * | 1978-02-06 | 1979-08-31 | Fairchild Camera Instr Co | CCD with charge packet memories - uses charges representing illumination and has transmission devices and signal processing unit |
EP0068786A2 (en) * | 1981-06-24 | 1983-01-05 | Plessey Overseas Limited | Improvements in or relating to detector arrays |
EP0068786A3 (en) * | 1981-06-24 | 1985-10-30 | Plessey Overseas Limited | Improvements in or relating to detector arrays |
EP0109445A1 (en) * | 1982-05-21 | 1984-05-30 | Sony Corporation | Charge transfer devices for multiplexing signals |
EP0109445A4 (en) * | 1982-05-21 | 1986-01-07 | Sony Corp | Charge transfer devices for multiplexing signals. |
GB2125651A (en) * | 1982-08-18 | 1984-03-07 | Eastman Kodak Co | Image sensors for rangefinders |
FR2685152A1 (en) * | 1991-11-27 | 1993-06-18 | Eev Ltd | LOAD COUPLING DEVICE. |
US5528642A (en) * | 1993-01-21 | 1996-06-18 | Sony Corporation | Solid-state imaging device with fast clock speed for improved image quality |
Also Published As
Publication number | Publication date |
---|---|
CA1020656A (en) | 1977-11-08 |
JPS55171169U (en) | 1980-12-08 |
HK6480A (en) | 1980-03-07 |
JPS49123722A (en) | 1974-11-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |