JPS6417484A - Semiconductor light emitting element - Google Patents

Semiconductor light emitting element

Info

Publication number
JPS6417484A
JPS6417484A JP17289387A JP17289387A JPS6417484A JP S6417484 A JPS6417484 A JP S6417484A JP 17289387 A JP17289387 A JP 17289387A JP 17289387 A JP17289387 A JP 17289387A JP S6417484 A JPS6417484 A JP S6417484A
Authority
JP
Japan
Prior art keywords
light emitting
layer
emitting layer
current injection
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17289387A
Other languages
Japanese (ja)
Other versions
JPH0614564B2 (en
Inventor
Hidenao Tanaka
Takashi Matsuoka
Kunishige Oe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP17289387A priority Critical patent/JPH0614564B2/en
Publication of JPS6417484A publication Critical patent/JPS6417484A/en
Publication of JPH0614564B2 publication Critical patent/JPH0614564B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PURPOSE:To increase a current injection amount and to enhance light emitting efficiency by using a heterojunction of a preferable group III nitride as a light emitting unit, i.e., a light emitting layer and a current injection layer. CONSTITUTION:An Al0.20Ga0.21In0.59 N-type current injection layer (clad layer) 2 of 53mum, a Ga0.43In0.57 N-type light emitting layer 3 of 0.5mum, a current injec tion layer and Au electrodes 4, 5 for the light emitting layer are provided on a sapphire substrate 1. The current injection layer is formed of an N-type low resistance, and the light emitting layer is doped with Zn as a high resistance. When a voltage is applied with the electrode 5 as a positive side, carrier is injected to a GaInN light emitting layer, thereby emitting a blue color of approx. 4800nm. Carrier flows also to an AlGaInN current injection 2, but band gap difference is approx. 0.4eV, reactive current is reduced by the effect of band discontinuity, thin to 0.5mum, and a light is emitted in high efficiency of 1% of external quantum efficiency even with the low resistance light emitting layer as compared with a conventional one.
JP17289387A 1987-07-13 1987-07-13 Semiconductor light emitting element Expired - Lifetime JPH0614564B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17289387A JPH0614564B2 (en) 1987-07-13 1987-07-13 Semiconductor light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17289387A JPH0614564B2 (en) 1987-07-13 1987-07-13 Semiconductor light emitting element

Publications (2)

Publication Number Publication Date
JPS6417484A true JPS6417484A (en) 1989-01-20
JPH0614564B2 JPH0614564B2 (en) 1994-02-23

Family

ID=15950283

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17289387A Expired - Lifetime JPH0614564B2 (en) 1987-07-13 1987-07-13 Semiconductor light emitting element

Country Status (1)

Country Link
JP (1) JPH0614564B2 (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02211620A (en) * 1989-02-13 1990-08-22 Nippon Telegr & Teleph Corp <Ntt> Method of growing single crystal thin film of compound semiconductor
JPH02229475A (en) * 1989-03-01 1990-09-12 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light-emitting element
EP0496030A2 (en) * 1991-01-21 1992-07-29 Pioneer Electronic Corporation Semiconductor light emitting device
JPH04321280A (en) * 1991-04-19 1992-11-11 Nichia Chem Ind Ltd Blue color light-emitting diode
US5578839A (en) * 1992-11-20 1996-11-26 Nichia Chemical Industries, Ltd. Light-emitting gallium nitride-based compound semiconductor device
JPH09153644A (en) * 1995-11-30 1997-06-10 Toyoda Gosei Co Ltd Group-iii nitride semiconductor display device
JPH11163404A (en) * 1997-11-25 1999-06-18 Toyoda Gosei Co Ltd Gan-based semiconductor
JP2001237455A (en) * 2000-02-23 2001-08-31 Inst Of Physical & Chemical Res InAlGaN EMITTING LIGHT IN SHORT-WAVELENGTH REGION OF ULTRAVIOLET REGION, ITS MANUFACTURING METHOD AS WELL AS ULTRAVIOLET LIGHT-EMITTING ELEMENT USING THE SAME
JP2004247753A (en) * 2004-04-15 2004-09-02 Toyoda Gosei Co Ltd GaN SYSTEM SEMICONDUCTOR
JP2004363635A (en) * 2004-09-27 2004-12-24 Nichia Chem Ind Ltd Light-emitting diode
US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
JP2006060254A (en) * 2005-10-31 2006-03-02 Nichia Chem Ind Ltd Light emitting diode
US7045829B2 (en) 1995-07-24 2006-05-16 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using Group III nitride compound
JP2008288621A (en) * 1998-09-10 2008-11-27 Rohm Co Ltd Semiconductor laser
JP2009059974A (en) * 2007-09-03 2009-03-19 Univ Meijo Semiconductor substrate, semiconductor light emitting element and manufacturing method of semiconductor substrate
US7557145B2 (en) 2003-06-17 2009-07-07 Henkel Kommanditgesellschaft Auf Aktien (Henkel Kgaa) Inhibition of the asexual reproduction of fungi by eugenol and/or derivatives thereof
JP2012015535A (en) * 2004-07-27 2012-01-19 Cree Inc Group iii nitride based quantum well light emitting device structures with capping structure containing indium
US8546787B2 (en) 2001-05-30 2013-10-01 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS553834A (en) * 1978-06-23 1980-01-11 Yasuko Shiomi Hand shower with water-stop valve

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS553834A (en) * 1978-06-23 1980-01-11 Yasuko Shiomi Hand shower with water-stop valve

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02211620A (en) * 1989-02-13 1990-08-22 Nippon Telegr & Teleph Corp <Ntt> Method of growing single crystal thin film of compound semiconductor
US5006908A (en) * 1989-02-13 1991-04-09 Nippon Telegraph And Telephone Corporation Epitaxial Wurtzite growth structure for semiconductor light-emitting device
JPH02229475A (en) * 1989-03-01 1990-09-12 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light-emitting element
EP0496030A2 (en) * 1991-01-21 1992-07-29 Pioneer Electronic Corporation Semiconductor light emitting device
JPH04321280A (en) * 1991-04-19 1992-11-11 Nichia Chem Ind Ltd Blue color light-emitting diode
US6469323B1 (en) 1992-11-20 2002-10-22 Nichia Chemical Industries, Ltd. Light-emitting gallium nitride-based compound semiconductor device
US5734182A (en) * 1992-11-20 1998-03-31 Nichia Chemical Industries Ltd. Light-emitting gallium nitride-based compound semiconducor device
US5747832A (en) * 1992-11-20 1998-05-05 Nichia Chemical Industries, Ltd. Light-emitting gallium nitride-based compound semiconductor device
US5880486A (en) * 1992-11-20 1999-03-09 Nichia Chemical Industries, Ltd. Light-emitting gallium nitride-based compound semiconductor device
US6078063A (en) * 1992-11-20 2000-06-20 Nichia Chemical Industries Ltd. Light-emitting gallium nitride-based compound semiconductor device
US6215133B1 (en) 1992-11-20 2001-04-10 Nichia Chemical Industries, Ltd. Light-emitting gallium nitride-based compound semiconductor device
US5578839A (en) * 1992-11-20 1996-11-26 Nichia Chemical Industries, Ltd. Light-emitting gallium nitride-based compound semiconductor device
US8934513B2 (en) 1994-09-14 2015-01-13 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
US7045829B2 (en) 1995-07-24 2006-05-16 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using Group III nitride compound
JPH09153644A (en) * 1995-11-30 1997-06-10 Toyoda Gosei Co Ltd Group-iii nitride semiconductor display device
JPH11163404A (en) * 1997-11-25 1999-06-18 Toyoda Gosei Co Ltd Gan-based semiconductor
JP2008288621A (en) * 1998-09-10 2008-11-27 Rohm Co Ltd Semiconductor laser
JP2001237455A (en) * 2000-02-23 2001-08-31 Inst Of Physical & Chemical Res InAlGaN EMITTING LIGHT IN SHORT-WAVELENGTH REGION OF ULTRAVIOLET REGION, ITS MANUFACTURING METHOD AS WELL AS ULTRAVIOLET LIGHT-EMITTING ELEMENT USING THE SAME
US9112083B2 (en) 2001-05-30 2015-08-18 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
US9054253B2 (en) 2001-05-30 2015-06-09 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
US8546787B2 (en) 2001-05-30 2013-10-01 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
US7557145B2 (en) 2003-06-17 2009-07-07 Henkel Kommanditgesellschaft Auf Aktien (Henkel Kgaa) Inhibition of the asexual reproduction of fungi by eugenol and/or derivatives thereof
JP2004247753A (en) * 2004-04-15 2004-09-02 Toyoda Gosei Co Ltd GaN SYSTEM SEMICONDUCTOR
JP2012015535A (en) * 2004-07-27 2012-01-19 Cree Inc Group iii nitride based quantum well light emitting device structures with capping structure containing indium
JP2004363635A (en) * 2004-09-27 2004-12-24 Nichia Chem Ind Ltd Light-emitting diode
JP2006060254A (en) * 2005-10-31 2006-03-02 Nichia Chem Ind Ltd Light emitting diode
JP2009059974A (en) * 2007-09-03 2009-03-19 Univ Meijo Semiconductor substrate, semiconductor light emitting element and manufacturing method of semiconductor substrate

Also Published As

Publication number Publication date
JPH0614564B2 (en) 1994-02-23

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