JPS6417484A - Semiconductor light emitting element - Google Patents
Semiconductor light emitting elementInfo
- Publication number
- JPS6417484A JPS6417484A JP17289387A JP17289387A JPS6417484A JP S6417484 A JPS6417484 A JP S6417484A JP 17289387 A JP17289387 A JP 17289387A JP 17289387 A JP17289387 A JP 17289387A JP S6417484 A JPS6417484 A JP S6417484A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- layer
- emitting layer
- current injection
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Led Devices (AREA)
Abstract
PURPOSE:To increase a current injection amount and to enhance light emitting efficiency by using a heterojunction of a preferable group III nitride as a light emitting unit, i.e., a light emitting layer and a current injection layer. CONSTITUTION:An Al0.20Ga0.21In0.59 N-type current injection layer (clad layer) 2 of 53mum, a Ga0.43In0.57 N-type light emitting layer 3 of 0.5mum, a current injec tion layer and Au electrodes 4, 5 for the light emitting layer are provided on a sapphire substrate 1. The current injection layer is formed of an N-type low resistance, and the light emitting layer is doped with Zn as a high resistance. When a voltage is applied with the electrode 5 as a positive side, carrier is injected to a GaInN light emitting layer, thereby emitting a blue color of approx. 4800nm. Carrier flows also to an AlGaInN current injection 2, but band gap difference is approx. 0.4eV, reactive current is reduced by the effect of band discontinuity, thin to 0.5mum, and a light is emitted in high efficiency of 1% of external quantum efficiency even with the low resistance light emitting layer as compared with a conventional one.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17289387A JPH0614564B2 (en) | 1987-07-13 | 1987-07-13 | Semiconductor light emitting element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17289387A JPH0614564B2 (en) | 1987-07-13 | 1987-07-13 | Semiconductor light emitting element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6417484A true JPS6417484A (en) | 1989-01-20 |
JPH0614564B2 JPH0614564B2 (en) | 1994-02-23 |
Family
ID=15950283
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17289387A Expired - Lifetime JPH0614564B2 (en) | 1987-07-13 | 1987-07-13 | Semiconductor light emitting element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0614564B2 (en) |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02211620A (en) * | 1989-02-13 | 1990-08-22 | Nippon Telegr & Teleph Corp <Ntt> | Method of growing single crystal thin film of compound semiconductor |
JPH02229475A (en) * | 1989-03-01 | 1990-09-12 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light-emitting element |
EP0496030A2 (en) * | 1991-01-21 | 1992-07-29 | Pioneer Electronic Corporation | Semiconductor light emitting device |
JPH04321280A (en) * | 1991-04-19 | 1992-11-11 | Nichia Chem Ind Ltd | Blue color light-emitting diode |
US5578839A (en) * | 1992-11-20 | 1996-11-26 | Nichia Chemical Industries, Ltd. | Light-emitting gallium nitride-based compound semiconductor device |
JPH09153644A (en) * | 1995-11-30 | 1997-06-10 | Toyoda Gosei Co Ltd | Group-iii nitride semiconductor display device |
JPH11163404A (en) * | 1997-11-25 | 1999-06-18 | Toyoda Gosei Co Ltd | Gan-based semiconductor |
JP2001237455A (en) * | 2000-02-23 | 2001-08-31 | Inst Of Physical & Chemical Res | InAlGaN EMITTING LIGHT IN SHORT-WAVELENGTH REGION OF ULTRAVIOLET REGION, ITS MANUFACTURING METHOD AS WELL AS ULTRAVIOLET LIGHT-EMITTING ELEMENT USING THE SAME |
JP2004247753A (en) * | 2004-04-15 | 2004-09-02 | Toyoda Gosei Co Ltd | GaN SYSTEM SEMICONDUCTOR |
JP2004363635A (en) * | 2004-09-27 | 2004-12-24 | Nichia Chem Ind Ltd | Light-emitting diode |
US6996150B1 (en) | 1994-09-14 | 2006-02-07 | Rohm Co., Ltd. | Semiconductor light emitting device and manufacturing method therefor |
JP2006060254A (en) * | 2005-10-31 | 2006-03-02 | Nichia Chem Ind Ltd | Light emitting diode |
US7045829B2 (en) | 1995-07-24 | 2006-05-16 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using Group III nitride compound |
JP2008288621A (en) * | 1998-09-10 | 2008-11-27 | Rohm Co Ltd | Semiconductor laser |
JP2009059974A (en) * | 2007-09-03 | 2009-03-19 | Univ Meijo | Semiconductor substrate, semiconductor light emitting element and manufacturing method of semiconductor substrate |
US7557145B2 (en) | 2003-06-17 | 2009-07-07 | Henkel Kommanditgesellschaft Auf Aktien (Henkel Kgaa) | Inhibition of the asexual reproduction of fungi by eugenol and/or derivatives thereof |
JP2012015535A (en) * | 2004-07-27 | 2012-01-19 | Cree Inc | Group iii nitride based quantum well light emitting device structures with capping structure containing indium |
US8546787B2 (en) | 2001-05-30 | 2013-10-01 | Cree, Inc. | Group III nitride based quantum well light emitting device structures with an indium containing capping structure |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS553834A (en) * | 1978-06-23 | 1980-01-11 | Yasuko Shiomi | Hand shower with water-stop valve |
-
1987
- 1987-07-13 JP JP17289387A patent/JPH0614564B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS553834A (en) * | 1978-06-23 | 1980-01-11 | Yasuko Shiomi | Hand shower with water-stop valve |
Cited By (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02211620A (en) * | 1989-02-13 | 1990-08-22 | Nippon Telegr & Teleph Corp <Ntt> | Method of growing single crystal thin film of compound semiconductor |
US5006908A (en) * | 1989-02-13 | 1991-04-09 | Nippon Telegraph And Telephone Corporation | Epitaxial Wurtzite growth structure for semiconductor light-emitting device |
JPH02229475A (en) * | 1989-03-01 | 1990-09-12 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light-emitting element |
EP0496030A2 (en) * | 1991-01-21 | 1992-07-29 | Pioneer Electronic Corporation | Semiconductor light emitting device |
JPH04321280A (en) * | 1991-04-19 | 1992-11-11 | Nichia Chem Ind Ltd | Blue color light-emitting diode |
US6469323B1 (en) | 1992-11-20 | 2002-10-22 | Nichia Chemical Industries, Ltd. | Light-emitting gallium nitride-based compound semiconductor device |
US5734182A (en) * | 1992-11-20 | 1998-03-31 | Nichia Chemical Industries Ltd. | Light-emitting gallium nitride-based compound semiconducor device |
US5747832A (en) * | 1992-11-20 | 1998-05-05 | Nichia Chemical Industries, Ltd. | Light-emitting gallium nitride-based compound semiconductor device |
US5880486A (en) * | 1992-11-20 | 1999-03-09 | Nichia Chemical Industries, Ltd. | Light-emitting gallium nitride-based compound semiconductor device |
US6078063A (en) * | 1992-11-20 | 2000-06-20 | Nichia Chemical Industries Ltd. | Light-emitting gallium nitride-based compound semiconductor device |
US6215133B1 (en) | 1992-11-20 | 2001-04-10 | Nichia Chemical Industries, Ltd. | Light-emitting gallium nitride-based compound semiconductor device |
US5578839A (en) * | 1992-11-20 | 1996-11-26 | Nichia Chemical Industries, Ltd. | Light-emitting gallium nitride-based compound semiconductor device |
US8934513B2 (en) | 1994-09-14 | 2015-01-13 | Rohm Co., Ltd. | Semiconductor light emitting device and manufacturing method therefor |
US6996150B1 (en) | 1994-09-14 | 2006-02-07 | Rohm Co., Ltd. | Semiconductor light emitting device and manufacturing method therefor |
US7045829B2 (en) | 1995-07-24 | 2006-05-16 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using Group III nitride compound |
JPH09153644A (en) * | 1995-11-30 | 1997-06-10 | Toyoda Gosei Co Ltd | Group-iii nitride semiconductor display device |
JPH11163404A (en) * | 1997-11-25 | 1999-06-18 | Toyoda Gosei Co Ltd | Gan-based semiconductor |
JP2008288621A (en) * | 1998-09-10 | 2008-11-27 | Rohm Co Ltd | Semiconductor laser |
JP2001237455A (en) * | 2000-02-23 | 2001-08-31 | Inst Of Physical & Chemical Res | InAlGaN EMITTING LIGHT IN SHORT-WAVELENGTH REGION OF ULTRAVIOLET REGION, ITS MANUFACTURING METHOD AS WELL AS ULTRAVIOLET LIGHT-EMITTING ELEMENT USING THE SAME |
US9112083B2 (en) | 2001-05-30 | 2015-08-18 | Cree, Inc. | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
US9054253B2 (en) | 2001-05-30 | 2015-06-09 | Cree, Inc. | Group III nitride based quantum well light emitting device structures with an indium containing capping structure |
US8546787B2 (en) | 2001-05-30 | 2013-10-01 | Cree, Inc. | Group III nitride based quantum well light emitting device structures with an indium containing capping structure |
US7557145B2 (en) | 2003-06-17 | 2009-07-07 | Henkel Kommanditgesellschaft Auf Aktien (Henkel Kgaa) | Inhibition of the asexual reproduction of fungi by eugenol and/or derivatives thereof |
JP2004247753A (en) * | 2004-04-15 | 2004-09-02 | Toyoda Gosei Co Ltd | GaN SYSTEM SEMICONDUCTOR |
JP2012015535A (en) * | 2004-07-27 | 2012-01-19 | Cree Inc | Group iii nitride based quantum well light emitting device structures with capping structure containing indium |
JP2004363635A (en) * | 2004-09-27 | 2004-12-24 | Nichia Chem Ind Ltd | Light-emitting diode |
JP2006060254A (en) * | 2005-10-31 | 2006-03-02 | Nichia Chem Ind Ltd | Light emitting diode |
JP2009059974A (en) * | 2007-09-03 | 2009-03-19 | Univ Meijo | Semiconductor substrate, semiconductor light emitting element and manufacturing method of semiconductor substrate |
Also Published As
Publication number | Publication date |
---|---|
JPH0614564B2 (en) | 1994-02-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080223 Year of fee payment: 14 |