JPS5624986A - Injection type light emitting semiconductor device and manufacture thereof - Google Patents

Injection type light emitting semiconductor device and manufacture thereof

Info

Publication number
JPS5624986A
JPS5624986A JP10150779A JP10150779A JPS5624986A JP S5624986 A JPS5624986 A JP S5624986A JP 10150779 A JP10150779 A JP 10150779A JP 10150779 A JP10150779 A JP 10150779A JP S5624986 A JPS5624986 A JP S5624986A
Authority
JP
Japan
Prior art keywords
junction
light emitting
type
doped
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10150779A
Other languages
Japanese (ja)
Other versions
JPS6048915B2 (en
Inventor
Kazunari Oota
Masaru Kazumura
Haruyoshi Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP54101507A priority Critical patent/JPS6048915B2/en
Publication of JPS5624986A publication Critical patent/JPS5624986A/en
Publication of JPS6048915B2 publication Critical patent/JPS6048915B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To contrive the stabilization of a current vs. voltage characteristics of the injection type light emitting semiconductor device and improvement in the light emitting efficiency thereof by isolating a P-N junction from a hetero junction to eliminate the discontinuous connection in the vicinity of the P-N junction. CONSTITUTION:A Zn doped P type Ga0.65Al0.35As12 is superimposed on a Zn- doped P type GaAs substrate 11, and Ga0.2Al0.8As13, 14 are laminated thereon. It is heat treated to diffuse the Zn in the layer 12 to form a P type layer 13, and to increase the thickness of the film higher than the diffusion distance of minority carrier. Te is doped in the layer 15. Further, N<+> type GaAs 15 and Au-Ge-Ni electrode 16 is attached thereto. Positive electrode 17 is evaporating Au-Zn to fix Ag paste 18 to a jig 19. The layers 13, 14 form P-N junction 21, and the layers 12, 13 form the hetero junction 22 to be isolated from each other. Accordingly, current vs. voltage characteristics thereof do not occur switching phenomenon to emit light in high reproducibility.
JP54101507A 1979-08-08 1979-08-08 Injection type light emitting semiconductor device and its manufacturing method Expired JPS6048915B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54101507A JPS6048915B2 (en) 1979-08-08 1979-08-08 Injection type light emitting semiconductor device and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54101507A JPS6048915B2 (en) 1979-08-08 1979-08-08 Injection type light emitting semiconductor device and its manufacturing method

Publications (2)

Publication Number Publication Date
JPS5624986A true JPS5624986A (en) 1981-03-10
JPS6048915B2 JPS6048915B2 (en) 1985-10-30

Family

ID=14302500

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54101507A Expired JPS6048915B2 (en) 1979-08-08 1979-08-08 Injection type light emitting semiconductor device and its manufacturing method

Country Status (1)

Country Link
JP (1) JPS6048915B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4804332A (en) * 1986-12-24 1989-02-14 Amp Incorporated Filtered electrical device and method for making same
JPH01225115A (en) * 1988-03-04 1989-09-08 Mitsubishi Monsanto Chem Co Epitaxial-wafer

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102076051B1 (en) * 2019-03-29 2020-02-12 주식회사 디오 Apparatus for treating surface of medical metal

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4804332A (en) * 1986-12-24 1989-02-14 Amp Incorporated Filtered electrical device and method for making same
JPH01225115A (en) * 1988-03-04 1989-09-08 Mitsubishi Monsanto Chem Co Epitaxial-wafer

Also Published As

Publication number Publication date
JPS6048915B2 (en) 1985-10-30

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