JPS57122585A - Light emitting diode - Google Patents
Light emitting diodeInfo
- Publication number
- JPS57122585A JPS57122585A JP870681A JP870681A JPS57122585A JP S57122585 A JPS57122585 A JP S57122585A JP 870681 A JP870681 A JP 870681A JP 870681 A JP870681 A JP 870681A JP S57122585 A JPS57122585 A JP S57122585A
- Authority
- JP
- Japan
- Prior art keywords
- region
- electrode
- side face
- vicinity
- led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To obtain high light emission efficiency in a light emitting diode by absorbing heat produced in a P-N junction region in the vicinity of the side face in the region corresponding to the part of a light shielding mask, thereby suppressing the increase in the temperature. CONSTITUTION:An LED is composed of a junction of a P type semiconductor layer P2 and an N type semiconductor layer N2. An electrode A2 is provided at a partial region contacted with the side face 10, from which a light e is emitted, is provided on the top surface of the layer P2, and a light shielding mask A3 of insulated state from the electrode 2A is formed at the part except the electrode A2. In an LED thus constructed, when a current is supplied to the electrode A2, a current is flowed mainly to the region in the vicinity of the side face 10 and is not considerably flowed to the region provided with a mask A3. Accordingly, the temperature rise of the latter region is less than that of the former region. Therefore, the heat produced from the former region can be absorbed by the latter region, thereby suppressing the temperature rise at the P-N junction region in the vicinity of the side face 10, thereby obtaining the LED having good light emission efficiency.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP870681A JPS57122585A (en) | 1981-01-22 | 1981-01-22 | Light emitting diode |
DE19813105617 DE3105617A1 (en) | 1980-04-01 | 1981-02-16 | LIGHT-EMITTING DIODE |
US06/244,321 US4412234A (en) | 1980-04-01 | 1981-03-16 | Light emitting diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP870681A JPS57122585A (en) | 1981-01-22 | 1981-01-22 | Light emitting diode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57122585A true JPS57122585A (en) | 1982-07-30 |
Family
ID=11700374
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP870681A Pending JPS57122585A (en) | 1980-04-01 | 1981-01-22 | Light emitting diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57122585A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6047476A (en) * | 1983-08-25 | 1985-03-14 | Sharp Corp | End face radiation type light emitting diode |
JP2002222992A (en) * | 2001-01-25 | 2002-08-09 | Rohm Co Ltd | Led light emitting element and device thereof |
-
1981
- 1981-01-22 JP JP870681A patent/JPS57122585A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6047476A (en) * | 1983-08-25 | 1985-03-14 | Sharp Corp | End face radiation type light emitting diode |
JP2002222992A (en) * | 2001-01-25 | 2002-08-09 | Rohm Co Ltd | Led light emitting element and device thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS52104091A (en) | Light-emitting semiconductor | |
JPS52124885A (en) | Semiconductor light emitting device | |
JPS5312288A (en) | Light emitting semiconductor device | |
JPS57122585A (en) | Light emitting diode | |
JPS56135994A (en) | Semiconductor light emitting device | |
JPS52114289A (en) | Semiconductor light emittiing element | |
JPS566480A (en) | Semiconductor light emitting diode | |
JPS5390786A (en) | Semiconductor light emitting device and its production | |
JPS577984A (en) | Semiconductor light emitting device | |
JPS5425184A (en) | Light emitting element of semiconductor | |
JPS5775471A (en) | Light emitting diode | |
JPS562693A (en) | Semiconductor laser device | |
JPS566482A (en) | Light controled semiconductor light emitting element | |
JPS5533028A (en) | Light-emitting semiconductor device | |
JPS5624987A (en) | Gaas infrared ray emitting diode and manufacture thereof | |
JPS6449247A (en) | Semiconductor light emitting device | |
FR2386907A1 (en) | Electroluminescent semiconductor for fibre-optics - has annular quasi isolating region controlling current density in active area of pn junction | |
JPS52135282A (en) | Semiconductor light emitting device | |
SU867249A1 (en) | Light-emitting diode | |
JPS6482594A (en) | Semiconductor laser device and manufacture thereof | |
JPS56140682A (en) | Light emission diode | |
JPS5779685A (en) | Light emitting diode device | |
JPS5779683A (en) | Narrow spectrum type light emitting diode | |
SE418548B (en) | THYRISTOR | |
JPS57160181A (en) | Light amplifying semiconductor device |