JPS5635411A - Epitaxial wafer of gallium arsenide and its manufacture - Google Patents

Epitaxial wafer of gallium arsenide and its manufacture

Info

Publication number
JPS5635411A
JPS5635411A JP11020779A JP11020779A JPS5635411A JP S5635411 A JPS5635411 A JP S5635411A JP 11020779 A JP11020779 A JP 11020779A JP 11020779 A JP11020779 A JP 11020779A JP S5635411 A JPS5635411 A JP S5635411A
Authority
JP
Japan
Prior art keywords
gaas
substrate
layer
high resistance
resistance layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11020779A
Other languages
Japanese (ja)
Inventor
Kenya Nakai
Kuninori Kitahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11020779A priority Critical patent/JPS5635411A/en
Publication of JPS5635411A publication Critical patent/JPS5635411A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To provide a substrate appropriate to a Schottky FET for a small signal, by epitaxially growing a high resistance layer of Fe-added GaAs, a GaAs layer supplied with no impurities and an active layer of GaAs supplied with a prescribed impurity on a single crystal substrate of Ge or Si. CONSTITUTION:A high resistance layer of Fe-doped GaAs is grown on a single crystal substrate of Fe or Si by a Ga-AsCl3-N2 gas-phase epitaxial growing method with carrier gas of N2 containing a small quantity of H2. At that time, the substrate is maintained at a temperature of 700 deg.C or more for a short time to produce a GaAs crystal nucleus. After that, the substrate is kept at a temperature of 540-640 deg.C so that a nondoped GaAs layer and an active layer of GaAs doped with a prescribed dopant are grown on the high resistance layer. Said procedure results in dispensing with a conventional expensive semi-insulating GaAs substrate and providing a substrate for a small signal.
JP11020779A 1979-08-31 1979-08-31 Epitaxial wafer of gallium arsenide and its manufacture Pending JPS5635411A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11020779A JPS5635411A (en) 1979-08-31 1979-08-31 Epitaxial wafer of gallium arsenide and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11020779A JPS5635411A (en) 1979-08-31 1979-08-31 Epitaxial wafer of gallium arsenide and its manufacture

Publications (1)

Publication Number Publication Date
JPS5635411A true JPS5635411A (en) 1981-04-08

Family

ID=14529763

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11020779A Pending JPS5635411A (en) 1979-08-31 1979-08-31 Epitaxial wafer of gallium arsenide and its manufacture

Country Status (1)

Country Link
JP (1) JPS5635411A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5942835A (en) * 1982-09-03 1984-03-09 味の素株式会社 Production of protein containing food
JPS63274457A (en) * 1987-05-07 1988-11-11 Fuji Boseki Kk Method of manufacturing granular porous chitosan derivative having cation exchange group
MD151Z (en) * 2008-12-30 2010-09-30 Государственный Университет Молд0 Process for growth of GaAs epitaxial layers into a horizontal reactor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5229171A (en) * 1975-08-30 1977-03-04 Fujitsu Ltd Process for crowing semiconductor crystal
JPS5248467A (en) * 1975-10-15 1977-04-18 Fujitsu Ltd Process for production of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5229171A (en) * 1975-08-30 1977-03-04 Fujitsu Ltd Process for crowing semiconductor crystal
JPS5248467A (en) * 1975-10-15 1977-04-18 Fujitsu Ltd Process for production of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5942835A (en) * 1982-09-03 1984-03-09 味の素株式会社 Production of protein containing food
JPS63274457A (en) * 1987-05-07 1988-11-11 Fuji Boseki Kk Method of manufacturing granular porous chitosan derivative having cation exchange group
JPH0667481B2 (en) * 1987-05-07 1994-08-31 富士紡績株式会社 Process for producing granular porous chitosan derivative having cation exchange group
MD151Z (en) * 2008-12-30 2010-09-30 Государственный Университет Молд0 Process for growth of GaAs epitaxial layers into a horizontal reactor

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