JPS5615045A - Formation of pattern - Google Patents
Formation of patternInfo
- Publication number
- JPS5615045A JPS5615045A JP9124079A JP9124079A JPS5615045A JP S5615045 A JPS5615045 A JP S5615045A JP 9124079 A JP9124079 A JP 9124079A JP 9124079 A JP9124079 A JP 9124079A JP S5615045 A JPS5615045 A JP S5615045A
- Authority
- JP
- Japan
- Prior art keywords
- film
- mask
- pattern
- chamber
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Abstract
PURPOSE:To simplify the steps of forming the pattern by irradiating a charge beam to the outer surface of a region to be etched in an organic gas atmosphere to form a hard-etching thin film and dry etching it with the thin film as a mask. CONSTITUTION:A chamber is evacuated to a vacuum to irradiate electron beam to a silicon substrate 1. Then, Trichlene gas is introduced into the chamber, and an electron beam A is irradiated only to the polycrystalline silicon 3 on a gate oxide film 2. In this manner a carbon film 7 is adhered onto the polycrystalline silicon portion 3, and it is plasma etched with the film 7 as a mask to form a silicon gate 3a thereon.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9124079A JPS5615045A (en) | 1979-07-17 | 1979-07-17 | Formation of pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9124079A JPS5615045A (en) | 1979-07-17 | 1979-07-17 | Formation of pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5615045A true JPS5615045A (en) | 1981-02-13 |
Family
ID=14020889
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9124079A Pending JPS5615045A (en) | 1979-07-17 | 1979-07-17 | Formation of pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5615045A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60167428A (en) * | 1984-02-10 | 1985-08-30 | Mitsubishi Electric Corp | Fine process |
JPS6110241A (en) * | 1984-06-26 | 1986-01-17 | Toshiba Corp | Manufacture of semiconductor device |
DE4334891A1 (en) * | 1993-10-13 | 1995-04-20 | Dresden Ev Inst Festkoerper | Method and device for the preparation of materials samples for examinations of materials |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5461477A (en) * | 1977-10-26 | 1979-05-17 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of machining by electron beam or ion beam irradiation |
-
1979
- 1979-07-17 JP JP9124079A patent/JPS5615045A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5461477A (en) * | 1977-10-26 | 1979-05-17 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of machining by electron beam or ion beam irradiation |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60167428A (en) * | 1984-02-10 | 1985-08-30 | Mitsubishi Electric Corp | Fine process |
JPS6110241A (en) * | 1984-06-26 | 1986-01-17 | Toshiba Corp | Manufacture of semiconductor device |
DE4334891A1 (en) * | 1993-10-13 | 1995-04-20 | Dresden Ev Inst Festkoerper | Method and device for the preparation of materials samples for examinations of materials |
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