JPS56115547A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56115547A JPS56115547A JP1879080A JP1879080A JPS56115547A JP S56115547 A JPS56115547 A JP S56115547A JP 1879080 A JP1879080 A JP 1879080A JP 1879080 A JP1879080 A JP 1879080A JP S56115547 A JPS56115547 A JP S56115547A
- Authority
- JP
- Japan
- Prior art keywords
- injected
- hole
- insulator regions
- different
- sio2 layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1879080A JPS56115547A (en) | 1980-02-18 | 1980-02-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1879080A JPS56115547A (en) | 1980-02-18 | 1980-02-18 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56115547A true JPS56115547A (en) | 1981-09-10 |
Family
ID=11981395
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1879080A Pending JPS56115547A (en) | 1980-02-18 | 1980-02-18 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56115547A (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6097637A (ja) * | 1983-11-01 | 1985-05-31 | Matsushita Electronics Corp | 半導体装置の製造方法 |
US4564583A (en) * | 1983-02-07 | 1986-01-14 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing a semiconductor device |
US5116775A (en) * | 1986-06-18 | 1992-05-26 | Hitachi, Ltd. | Method of producing semiconductor memory device with buried barrier layer |
DE4212503A1 (de) * | 1991-04-15 | 1992-10-22 | Gold Star Electronics | Halbleiterbaustein und verfahren zu seiner herstellung |
US6127242A (en) * | 1994-02-10 | 2000-10-03 | Micron Technology, Inc. | Method for semiconductor device isolation using oxygen and nitrogen ion implantations to reduce lateral encroachment |
-
1980
- 1980-02-18 JP JP1879080A patent/JPS56115547A/ja active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4564583A (en) * | 1983-02-07 | 1986-01-14 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing a semiconductor device |
JPS6097637A (ja) * | 1983-11-01 | 1985-05-31 | Matsushita Electronics Corp | 半導体装置の製造方法 |
US5116775A (en) * | 1986-06-18 | 1992-05-26 | Hitachi, Ltd. | Method of producing semiconductor memory device with buried barrier layer |
DE4212503A1 (de) * | 1991-04-15 | 1992-10-22 | Gold Star Electronics | Halbleiterbaustein und verfahren zu seiner herstellung |
US5182226A (en) * | 1991-04-15 | 1993-01-26 | Gold Star Electron Co., Ltd. | Method for fabrication of a field oxide of the buried inverse t-type using oxygen or nitrogen ion implantation |
US6127242A (en) * | 1994-02-10 | 2000-10-03 | Micron Technology, Inc. | Method for semiconductor device isolation using oxygen and nitrogen ion implantations to reduce lateral encroachment |
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