JPS5669868A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5669868A
JPS5669868A JP14690279A JP14690279A JPS5669868A JP S5669868 A JPS5669868 A JP S5669868A JP 14690279 A JP14690279 A JP 14690279A JP 14690279 A JP14690279 A JP 14690279A JP S5669868 A JPS5669868 A JP S5669868A
Authority
JP
Japan
Prior art keywords
mask
drain
layers
gate
jfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14690279A
Other languages
Japanese (ja)
Inventor
Kosei Kajiwara
Tatsunori Nakajima
Kazutoshi Nagano
Kosuke Yasuno
Seiji Onaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14690279A priority Critical patent/JPS5669868A/en
Publication of JPS5669868A publication Critical patent/JPS5669868A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To prevent the slippage of a location and obtain a JFET with high density by a method wherein impurities in a film and impurities ion-injected are simultaneously pushed in and diffused. CONSTITUTION:An N layer 2 is formed to a P type Si substrate, holes are made to an SiO2 film 10, and the relative locations of a source, a gate and a drain are decided in response to the accuracy of a mask. Poly Si 14 to which P is added and Si3N415 are stacked, a resist mask 16 is covered, and only a gate region is selectively opened 13. When B ion injecting layers 17 are made up, the mask 16 is removed and the B ions are pushed in and diffused according to wet oxidation, N<+> type sources 4, 4' and a drain 3 are obtained by P in the layer 14, B is activated, and gate layers 5, 5' are gained and covered with SiO218. Electricity is conducted among the sources and the drain, and diffusion is deepened adjusting the thickness TC of a channel. Lastly, Al electrodes 19, 20 are mounted, and a semiconductor device is completed. According to this constitution, different conductive type layers can be selectively formed without depending upon the matching of the mask, and a JFET with high density is stably obtained without lowering pressure resistance.
JP14690279A 1979-11-12 1979-11-12 Manufacture of semiconductor device Pending JPS5669868A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14690279A JPS5669868A (en) 1979-11-12 1979-11-12 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14690279A JPS5669868A (en) 1979-11-12 1979-11-12 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5669868A true JPS5669868A (en) 1981-06-11

Family

ID=15418145

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14690279A Pending JPS5669868A (en) 1979-11-12 1979-11-12 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5669868A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56114376A (en) * 1980-02-13 1981-09-08 Semiconductor Res Found Manufacture of semiconductor device
JPS5929470A (en) * 1982-08-12 1984-02-16 Nec Corp Manufacture of semiconductor device
JPS6092659A (en) * 1983-10-26 1985-05-24 Junichi Nishizawa Manufacture of solid-state image pickup device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5219081A (en) * 1975-08-05 1977-01-14 Fujitsu Ltd Production method of semiconductor device
JPS5345982A (en) * 1976-10-07 1978-04-25 Nec Corp Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5219081A (en) * 1975-08-05 1977-01-14 Fujitsu Ltd Production method of semiconductor device
JPS5345982A (en) * 1976-10-07 1978-04-25 Nec Corp Manufacture of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56114376A (en) * 1980-02-13 1981-09-08 Semiconductor Res Found Manufacture of semiconductor device
JPS5929470A (en) * 1982-08-12 1984-02-16 Nec Corp Manufacture of semiconductor device
JPS6092659A (en) * 1983-10-26 1985-05-24 Junichi Nishizawa Manufacture of solid-state image pickup device
JPH0441509B2 (en) * 1983-10-26 1992-07-08 Junichi Nishizawa

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