JPS5669868A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5669868A JPS5669868A JP14690279A JP14690279A JPS5669868A JP S5669868 A JPS5669868 A JP S5669868A JP 14690279 A JP14690279 A JP 14690279A JP 14690279 A JP14690279 A JP 14690279A JP S5669868 A JPS5669868 A JP S5669868A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- drain
- layers
- gate
- jfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 150000002500 ions Chemical class 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000005611 electricity Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000009279 wet oxidation reaction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To prevent the slippage of a location and obtain a JFET with high density by a method wherein impurities in a film and impurities ion-injected are simultaneously pushed in and diffused. CONSTITUTION:An N layer 2 is formed to a P type Si substrate, holes are made to an SiO2 film 10, and the relative locations of a source, a gate and a drain are decided in response to the accuracy of a mask. Poly Si 14 to which P is added and Si3N415 are stacked, a resist mask 16 is covered, and only a gate region is selectively opened 13. When B ion injecting layers 17 are made up, the mask 16 is removed and the B ions are pushed in and diffused according to wet oxidation, N<+> type sources 4, 4' and a drain 3 are obtained by P in the layer 14, B is activated, and gate layers 5, 5' are gained and covered with SiO218. Electricity is conducted among the sources and the drain, and diffusion is deepened adjusting the thickness TC of a channel. Lastly, Al electrodes 19, 20 are mounted, and a semiconductor device is completed. According to this constitution, different conductive type layers can be selectively formed without depending upon the matching of the mask, and a JFET with high density is stably obtained without lowering pressure resistance.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14690279A JPS5669868A (en) | 1979-11-12 | 1979-11-12 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14690279A JPS5669868A (en) | 1979-11-12 | 1979-11-12 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5669868A true JPS5669868A (en) | 1981-06-11 |
Family
ID=15418145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14690279A Pending JPS5669868A (en) | 1979-11-12 | 1979-11-12 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5669868A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56114376A (en) * | 1980-02-13 | 1981-09-08 | Semiconductor Res Found | Manufacture of semiconductor device |
JPS5929470A (en) * | 1982-08-12 | 1984-02-16 | Nec Corp | Manufacture of semiconductor device |
JPS6092659A (en) * | 1983-10-26 | 1985-05-24 | Junichi Nishizawa | Manufacture of solid-state image pickup device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5219081A (en) * | 1975-08-05 | 1977-01-14 | Fujitsu Ltd | Production method of semiconductor device |
JPS5345982A (en) * | 1976-10-07 | 1978-04-25 | Nec Corp | Manufacture of semiconductor device |
-
1979
- 1979-11-12 JP JP14690279A patent/JPS5669868A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5219081A (en) * | 1975-08-05 | 1977-01-14 | Fujitsu Ltd | Production method of semiconductor device |
JPS5345982A (en) * | 1976-10-07 | 1978-04-25 | Nec Corp | Manufacture of semiconductor device |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56114376A (en) * | 1980-02-13 | 1981-09-08 | Semiconductor Res Found | Manufacture of semiconductor device |
JPS5929470A (en) * | 1982-08-12 | 1984-02-16 | Nec Corp | Manufacture of semiconductor device |
JPS6092659A (en) * | 1983-10-26 | 1985-05-24 | Junichi Nishizawa | Manufacture of solid-state image pickup device |
JPH0441509B2 (en) * | 1983-10-26 | 1992-07-08 | Junichi Nishizawa |
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