JPS56125846A - Surface treatment of semiconductor - Google Patents
Surface treatment of semiconductorInfo
- Publication number
- JPS56125846A JPS56125846A JP2790380A JP2790380A JPS56125846A JP S56125846 A JPS56125846 A JP S56125846A JP 2790380 A JP2790380 A JP 2790380A JP 2790380 A JP2790380 A JP 2790380A JP S56125846 A JPS56125846 A JP S56125846A
- Authority
- JP
- Japan
- Prior art keywords
- film
- interface
- semiconductor
- substrate
- implanted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 238000004381 surface treatment Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 230000003647 oxidation Effects 0.000 abstract 3
- 238000007254 oxidation reaction Methods 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To form a semiconductor device in stable and excellent characteristic by decreasing an interface level density existing in the interface by a method wherein C ion is implanted in the interface of the semiconductor substrate and an insulating film formed on the semiconductor substrate surface. CONSTITUTION:An SiO2 film and an Si3N4 film are selectively formed on the P type Si substrate 1 and heat-treated in an oxidation atmosphere to form a field oxidation film 4, and then, the surface covered with the oxidation film is slightly oxidized to form a thin (e.g. 500-1,000Angstrom ) SiO2 film and then further, the C ion is implanted in the interface of the substrate 1 and the SiO2 films 4, 5 and anealed after the formation of an implanted region 6. Whereby the interface level density on the semiconductor surface to be formed with a gate-electrode thereon and a channel just below the gate insulating film 5 is made approximately zero to enable the semiconductor device of MOSIC etc. excellent in the characteristic to be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2790380A JPS56125846A (en) | 1980-03-07 | 1980-03-07 | Surface treatment of semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2790380A JPS56125846A (en) | 1980-03-07 | 1980-03-07 | Surface treatment of semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56125846A true JPS56125846A (en) | 1981-10-02 |
Family
ID=12233838
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2790380A Pending JPS56125846A (en) | 1980-03-07 | 1980-03-07 | Surface treatment of semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56125846A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4992840A (en) * | 1989-09-21 | 1991-02-12 | Hewlett-Packard Company | Carbon doping MOSFET substrate to suppress hit electron trapping |
| US5051377A (en) * | 1988-09-01 | 1991-09-24 | International Business Machines Corporation | Method for forming a thin dielectric layer on a substrate |
| US5139869A (en) * | 1988-09-01 | 1992-08-18 | Wolfgang Euen | Thin dielectric layer on a substrate |
| US5268311A (en) * | 1988-09-01 | 1993-12-07 | International Business Machines Corporation | Method for forming a thin dielectric layer on a substrate |
-
1980
- 1980-03-07 JP JP2790380A patent/JPS56125846A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5051377A (en) * | 1988-09-01 | 1991-09-24 | International Business Machines Corporation | Method for forming a thin dielectric layer on a substrate |
| US5139869A (en) * | 1988-09-01 | 1992-08-18 | Wolfgang Euen | Thin dielectric layer on a substrate |
| US5268311A (en) * | 1988-09-01 | 1993-12-07 | International Business Machines Corporation | Method for forming a thin dielectric layer on a substrate |
| US4992840A (en) * | 1989-09-21 | 1991-02-12 | Hewlett-Packard Company | Carbon doping MOSFET substrate to suppress hit electron trapping |
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