JPS56112753A - Gate turn-off thyristor - Google Patents

Gate turn-off thyristor

Info

Publication number
JPS56112753A
JPS56112753A JP1552980A JP1552980A JPS56112753A JP S56112753 A JPS56112753 A JP S56112753A JP 1552980 A JP1552980 A JP 1552980A JP 1552980 A JP1552980 A JP 1552980A JP S56112753 A JPS56112753 A JP S56112753A
Authority
JP
Japan
Prior art keywords
layer
depth
type high
thyristor
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1552980A
Other languages
Japanese (ja)
Other versions
JPS621259B2 (en
Inventor
Tatsuo Yamazaki
Takahiro Nagano
Shuroku Sakurada
Toshiki Kurosu
Yoichi Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Power Semiconductor Device Ltd
Original Assignee
Hitachi Ltd
Hitachi Haramachi Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Haramachi Electronics Ltd filed Critical Hitachi Ltd
Priority to JP1552980A priority Critical patent/JPS56112753A/en
Publication of JPS56112753A publication Critical patent/JPS56112753A/en
Publication of JPS621259B2 publication Critical patent/JPS621259B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To obtain the GTO (gate turn-off thyristor) having low forward voltage drop by increasing the depth of the n type high density layer for a short emitter deeper than the p type outermost layer at the anode side projecting part of the N type outermost layer and shallower than that at the portion except the projecting part. CONSTITUTION:The GTO has an nE layer 2, a pB layer 3, an nB layer 4, a pE layer 5 and n<+> type high impurity density layers 7a, 7b for the short emitter, The n<+> type high impurity density layers are deeper than the depth l1 of the pE layer at a depth of l2a in the region projected to the anode electrode 13 side of the layer 2 and shallower than that l1 at l2b at the portion except that. Thus, the current path of the layer 5 is expanded laterally to reduce the forward voltage drop and to suppress the carrier injection of the layer 5 at the time of turning off, and the turn- off gain can be increased.
JP1552980A 1980-02-13 1980-02-13 Gate turn-off thyristor Granted JPS56112753A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1552980A JPS56112753A (en) 1980-02-13 1980-02-13 Gate turn-off thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1552980A JPS56112753A (en) 1980-02-13 1980-02-13 Gate turn-off thyristor

Publications (2)

Publication Number Publication Date
JPS56112753A true JPS56112753A (en) 1981-09-05
JPS621259B2 JPS621259B2 (en) 1987-01-12

Family

ID=11891328

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1552980A Granted JPS56112753A (en) 1980-02-13 1980-02-13 Gate turn-off thyristor

Country Status (1)

Country Link
JP (1) JPS56112753A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61189667A (en) * 1985-02-18 1986-08-23 Toyo Electric Mfg Co Ltd Emitter short-circuit structure of semiconductor device
JPS61285766A (en) * 1985-06-12 1986-12-16 Toshiba Corp Manufacture of semiconductor device
JPS62141773A (en) * 1985-12-16 1987-06-25 Fuji Electric Co Ltd Gate turn off (gto) thyristor
US5093705A (en) * 1985-06-28 1992-03-03 Siemens Aktiengesellschaft Thyristor with reduced central zone thickness
JPH0527594U (en) * 1991-09-26 1993-04-09 中外炉工業株式会社 Furnace opening sealing device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61189667A (en) * 1985-02-18 1986-08-23 Toyo Electric Mfg Co Ltd Emitter short-circuit structure of semiconductor device
JPS61285766A (en) * 1985-06-12 1986-12-16 Toshiba Corp Manufacture of semiconductor device
US5093705A (en) * 1985-06-28 1992-03-03 Siemens Aktiengesellschaft Thyristor with reduced central zone thickness
JPS62141773A (en) * 1985-12-16 1987-06-25 Fuji Electric Co Ltd Gate turn off (gto) thyristor
JPH0527594U (en) * 1991-09-26 1993-04-09 中外炉工業株式会社 Furnace opening sealing device

Also Published As

Publication number Publication date
JPS621259B2 (en) 1987-01-12

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