JPS57138175A - Controlled rectifier for semiconductor - Google Patents

Controlled rectifier for semiconductor

Info

Publication number
JPS57138175A
JPS57138175A JP2305781A JP2305781A JPS57138175A JP S57138175 A JPS57138175 A JP S57138175A JP 2305781 A JP2305781 A JP 2305781A JP 2305781 A JP2305781 A JP 2305781A JP S57138175 A JPS57138175 A JP S57138175A
Authority
JP
Japan
Prior art keywords
layer
type
section
base
turn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2305781A
Other languages
Japanese (ja)
Inventor
Susumu Murakami
Yoshio Terasawa
Masahiro Okamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2305781A priority Critical patent/JPS57138175A/en
Publication of JPS57138175A publication Critical patent/JPS57138175A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To uniformly perform turn-on and turn-off operations in the operation region of the subject device by a method wherein, in the gate turn-off thyristor of self-extinguishing type, and among base regions, the base region to be located under an emitter layer is thinly formed, and the quantity of impurities is increased in this base layer. CONSTITUTION:An N type base layer 1 and a P type layer 4 are formed by lamination on a P type emitter layer 2, an N type emitter layer 3 is formed by diffusion in the center part of the layer 4, and a P<+> type layer 5 to be used for contact are provided on both sides of the layer 3. Then, an annode electrode 6 is coated allover the reverse side of the layer 2, and a cathode electrode 7 and a gate electrode 8 are installed on the layers 3 and 5 respectively. In this constitution, the section 41 on the layer 4 located under the layer 3 is formed thinner than the other sections, and also the density of impurities in this section is made higher than that of the section 42. Accordingly, the gate firing current of the operation region is extremely reduced in intensity, because there exists the section 4 having an excellent efficiency of electron injection from the layer 3, and the ON and OFF function is made uniform, thereby enabling to increase the di/dt withstand voltage.
JP2305781A 1981-02-20 1981-02-20 Controlled rectifier for semiconductor Pending JPS57138175A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2305781A JPS57138175A (en) 1981-02-20 1981-02-20 Controlled rectifier for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2305781A JPS57138175A (en) 1981-02-20 1981-02-20 Controlled rectifier for semiconductor

Publications (1)

Publication Number Publication Date
JPS57138175A true JPS57138175A (en) 1982-08-26

Family

ID=12099803

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2305781A Pending JPS57138175A (en) 1981-02-20 1981-02-20 Controlled rectifier for semiconductor

Country Status (1)

Country Link
JP (1) JPS57138175A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5951569A (en) * 1982-09-17 1984-03-26 Mitsubishi Electric Corp Gate turn-off thyristor
JPS621271A (en) * 1985-06-26 1987-01-07 Hitachi Ltd Gate turn-off thyristor
JPS63216377A (en) * 1987-03-05 1988-09-08 Mitsubishi Electric Corp Semiconductor device
FR2617641A1 (en) * 1987-07-03 1989-01-06 Thomson Semiconducteurs PROTECTIVE THYRISTOR WITH AUXILIARY TRIGGER
JPH02159067A (en) * 1988-12-13 1990-06-19 Meidensha Corp Gate turn-off thyristor
EP3823035A4 (en) * 2018-07-11 2022-05-04 Hangzhou Ug Min Semiconductor Technology Co., Ltd. Gate turn-off thyristor and manufacturing method therefor
GB2612636A (en) * 2021-11-08 2023-05-10 Mqsemi Ag Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53102678A (en) * 1977-02-19 1978-09-07 Handotai Kenkyu Shinkokai Semiconductor and semiconductor ic
JPS561786A (en) * 1979-06-14 1981-01-09 Toshiba Corp Method for starting ac motor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53102678A (en) * 1977-02-19 1978-09-07 Handotai Kenkyu Shinkokai Semiconductor and semiconductor ic
JPS561786A (en) * 1979-06-14 1981-01-09 Toshiba Corp Method for starting ac motor

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5951569A (en) * 1982-09-17 1984-03-26 Mitsubishi Electric Corp Gate turn-off thyristor
JPS621271A (en) * 1985-06-26 1987-01-07 Hitachi Ltd Gate turn-off thyristor
JPS63216377A (en) * 1987-03-05 1988-09-08 Mitsubishi Electric Corp Semiconductor device
FR2617641A1 (en) * 1987-07-03 1989-01-06 Thomson Semiconducteurs PROTECTIVE THYRISTOR WITH AUXILIARY TRIGGER
JPH02159067A (en) * 1988-12-13 1990-06-19 Meidensha Corp Gate turn-off thyristor
EP3823035A4 (en) * 2018-07-11 2022-05-04 Hangzhou Ug Min Semiconductor Technology Co., Ltd. Gate turn-off thyristor and manufacturing method therefor
GB2612636A (en) * 2021-11-08 2023-05-10 Mqsemi Ag Semiconductor device
GB2612636B (en) * 2021-11-08 2024-06-05 Mqsemi Ag Integrated Gate Commutated Thyristor

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