JPS5650567A - Semiconductor controlled rectifier - Google Patents

Semiconductor controlled rectifier

Info

Publication number
JPS5650567A
JPS5650567A JP12763479A JP12763479A JPS5650567A JP S5650567 A JPS5650567 A JP S5650567A JP 12763479 A JP12763479 A JP 12763479A JP 12763479 A JP12763479 A JP 12763479A JP S5650567 A JPS5650567 A JP S5650567A
Authority
JP
Japan
Prior art keywords
conductivity type
base layer
anode
type conductivity
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12763479A
Other languages
Japanese (ja)
Other versions
JPS6013312B2 (en
Inventor
Yoshinori Yukimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12763479A priority Critical patent/JPS6013312B2/en
Publication of JPS5650567A publication Critical patent/JPS5650567A/en
Publication of JPS6013312B2 publication Critical patent/JPS6013312B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To contrive the increase in the control speed of a semiconductor controlled rectifier and in the withstand voltage thereof by forming an n type conductivity type base layer of a gate region and partly shorting the p tyep conductivity type anode region in a thyristor having an emitter shorting structure. CONSTITUTION:A high density p<+> type conductivity type gate region 9 of comblike or mesh shape of longitudinally and laterally fine patterns is formed adjacent to a p type conductivity type base alyer 3a on one surface of an n type conductivity type base layer 1, and the other surface of the base layer is made direct contact with an anode electrode to partly short with a p type conductivity type anode layer 2. Accordingly, the holes injected from the gate electrode 7 are transmitted to the entire elements by the action of the gate region 9, the turn-off time can be shortened, the amount of the holes from the anode layer 2 is limited by the shorting portion 10, and the turn-off speed can be accelerated. Further, since the base layer 1 is substantially increased in thickness, the withstand voltage in the forward bias can be improved.
JP12763479A 1979-10-02 1979-10-02 Semiconductor controlled rectifier Expired JPS6013312B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12763479A JPS6013312B2 (en) 1979-10-02 1979-10-02 Semiconductor controlled rectifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12763479A JPS6013312B2 (en) 1979-10-02 1979-10-02 Semiconductor controlled rectifier

Publications (2)

Publication Number Publication Date
JPS5650567A true JPS5650567A (en) 1981-05-07
JPS6013312B2 JPS6013312B2 (en) 1985-04-06

Family

ID=14964937

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12763479A Expired JPS6013312B2 (en) 1979-10-02 1979-10-02 Semiconductor controlled rectifier

Country Status (1)

Country Link
JP (1) JPS6013312B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6411367A (en) * 1987-07-06 1989-01-13 Toshiba Corp Gate turn-off thyristor
JPH07307458A (en) * 1993-09-10 1995-11-21 Teccor Electron Inc Multilayer overvoltage protection device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6411367A (en) * 1987-07-06 1989-01-13 Toshiba Corp Gate turn-off thyristor
JPH07307458A (en) * 1993-09-10 1995-11-21 Teccor Electron Inc Multilayer overvoltage protection device

Also Published As

Publication number Publication date
JPS6013312B2 (en) 1985-04-06

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