JPS5591141A - Semiconductor device - Google Patents

Abstract

PURPOSE: To prevent breaking of the wire with a double layer metal film by attaching an upper metal film to the electrode wiring metal film with an insulation film put into a stepped opening under the film when an electrode wiring metal film is formed on the element region of a semiconductor device.

CONSTITUTION: An SiO₂ film 12 is applied on the Si substrate 11 and an opening is etched to have a drain region 13 and a source region 1 separately formed by diffusion. The film 12 on the gate region 15 of the substrate surround herewith is renewed into an extremely thin gate oxide film 16. Then, the first electrode wiring Al film 18 contacting the regions 13 and 14 is applied on the film 12 extending thereon and covered with an oxide film 19 by chemical evaporation. Thereafter, an opening is etched on the film 12 at the positions corresponding to the bonding pad part, the gate region, drain region and the source region to have the second Al film evaporated thereon extending thereon. With such an arrangement, at least one film can maintain the wiring function, even if either of the Al film 18 and 20 causes breaking of the wire, thus improving the production yield of MOS type IC.

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