JPS5474383A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5474383A
JPS5474383A JP14182077A JP14182077A JPS5474383A JP S5474383 A JPS5474383 A JP S5474383A JP 14182077 A JP14182077 A JP 14182077A JP 14182077 A JP14182077 A JP 14182077A JP S5474383 A JPS5474383 A JP S5474383A
Authority
JP
Japan
Prior art keywords
film
insulating film
crystal silicon
poly
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14182077A
Other languages
Japanese (ja)
Inventor
Kazunari Shirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14182077A priority Critical patent/JPS5474383A/en
Publication of JPS5474383A publication Critical patent/JPS5474383A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To improve the yield of semiconductors such as one transistor, one capacitor, memory, and cell by eliminating the need for the formation of an electrode contact window by etching an insulating film. CONSTITUTION:On the element formation part of semiconductor substrate 11, thin insulating film 12 is formed and on film 12, mask film 14 is formed which suppresses that storage-voltage applying poly-crystal silicon layer 13 and the insulating film become thick due to heat oxidation, Then, impurities are injected into the region determined by this mask film 14 to form impurity-treated regions 15 and 16. Then, insulating film 13' is formed on poly-crystal silicon film 13 through heat oxidation and after mask film 14 is removed, metal electrode wiring 17 is formed including the gate electrode.
JP14182077A 1977-11-26 1977-11-26 Manufacture of semiconductor device Pending JPS5474383A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14182077A JPS5474383A (en) 1977-11-26 1977-11-26 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14182077A JPS5474383A (en) 1977-11-26 1977-11-26 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5474383A true JPS5474383A (en) 1979-06-14

Family

ID=15300879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14182077A Pending JPS5474383A (en) 1977-11-26 1977-11-26 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5474383A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56142675A (en) * 1980-01-07 1981-11-07 Texas Instruments Inc Semiconductor memory and method of forming same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56142675A (en) * 1980-01-07 1981-11-07 Texas Instruments Inc Semiconductor memory and method of forming same
JPH056981A (en) * 1980-01-07 1993-01-14 Texas Instr Inc <Ti> Semiconductor memory
JPH0554267B2 (en) * 1980-01-07 1993-08-12 Texas Instruments Inc

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