JPS56142672A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS56142672A JPS56142672A JP4546980A JP4546980A JPS56142672A JP S56142672 A JPS56142672 A JP S56142672A JP 4546980 A JP4546980 A JP 4546980A JP 4546980 A JP4546980 A JP 4546980A JP S56142672 A JPS56142672 A JP S56142672A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- region
- source
- type
- drain regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 230000010354 integration Effects 0.000 abstract 1
- 238000002161 passivation Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To improve the integration of a semiconductor device by forming a source and a drain regions in a semiconductor layer formed on a semiconductor substrate, and forming a gate insulating film and a polycrystalline silicon film between the regions. CONSTITUTION:A P type impurity region 30 is formed partly on an N type impurity substrat 21, a P type low density silicon monocrystalline layer 31 is formed on the region 30, and an N type low density silicon monocrystalline layer 23 is formed in the vicinity of the layer 31. N type source and drain regions 32, 33 are formed on the layer 31, and P type source and drain regions 26, 27 are formed on the layer 23, passivation film 28 and electrode 29 are formed thereon, and the region 27 is electrically connected to the region 32. A gate oxide film 24 and a polycrystalline layer 25 are formed between the drain region 27 and the source region 32.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4546980A JPS56142672A (en) | 1980-04-07 | 1980-04-07 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4546980A JPS56142672A (en) | 1980-04-07 | 1980-04-07 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56142672A true JPS56142672A (en) | 1981-11-07 |
Family
ID=12720235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4546980A Pending JPS56142672A (en) | 1980-04-07 | 1980-04-07 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56142672A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54121683A (en) * | 1978-03-15 | 1979-09-20 | Hitachi Ltd | Semiconductor device and its manufacture |
-
1980
- 1980-04-07 JP JP4546980A patent/JPS56142672A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54121683A (en) * | 1978-03-15 | 1979-09-20 | Hitachi Ltd | Semiconductor device and its manufacture |
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