JPS6431442A - Semiconductor device - Google Patents

Abstract

PURPOSE:To miniaturize an element without increasing the width of a polycrystalline silicon at a hole by forming the width of a polycrystalline silicon layer for bringing into contact with a silicide layer formed on an active region on a silicon substrate surrounded by an insulator at a value equal to or less than the width of the silicide layer. CONSTITUTION:The four sides of the active region 101 of a semiconductor substrate 100 is surrounded by an insulating film 102, such as a silicon oxide film, and a silicon nitride film, and a silicide layer 103 is formed on the opening 104 of the active region. Then, when the polycrystalline silicon is etched, the silicon substrate of the active region of an element for obtaining the etching selection ratio of 5:1 is not etched between a polycrystalline silicon layer 105 and the layer 103, it is not necessary to increase the width of the silicon layer, and the width of the silicon layer can be formed at a value less than the width of the layer 103 when the active region of the element is brought into contact with the layer 105 through the opening 104. Accordingly, the element can be miniaturized without increasing the width of the polycrystalline silicon.