JPS5571038A - Splitting method for semiconductor wafer - Google Patents
Splitting method for semiconductor waferInfo
- Publication number
- JPS5571038A JPS5571038A JP14590778A JP14590778A JPS5571038A JP S5571038 A JPS5571038 A JP S5571038A JP 14590778 A JP14590778 A JP 14590778A JP 14590778 A JP14590778 A JP 14590778A JP S5571038 A JPS5571038 A JP S5571038A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- wafer
- pellet
- silicon
- islandlike
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Dicing (AREA)
Abstract
PURPOSE: To simplify selecting work and also to prevent a damage layer from occurring on the pn-junction surface of a silicon pellet by etching a silicon wafer after masking a plated layer of the silicon wafer at every semiconductor element areas.
CONSTITUTION: After forming a plated layer 2 on the surface of a silicon wafer 1, an islandlike resisto-layer 6 is formed on both sides of the layer 2 at every semiconductor element areas. Next, the wafer 1 with the layer 6 formed thereon is soaked in strong acid to remove the part of layer 2 of the wafer 1 on which the layer 6 has not been formed, and then the layer 6 is removed. A flux is then applied on overall surface of the wafer 1, which is soaked in a solder tank, the islandlike plated layer 2 is thus dipped with a solder 7, and the wafer is then etched. The wafer 1 is now split into each silicon pellet 8. A lead is attached to both ends of the pellet 8, the pn-junction of the pellet 8 is subjected to a surface treatment and sealed with resin.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14590778A JPS5571038A (en) | 1978-11-22 | 1978-11-22 | Splitting method for semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14590778A JPS5571038A (en) | 1978-11-22 | 1978-11-22 | Splitting method for semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5571038A true JPS5571038A (en) | 1980-05-28 |
Family
ID=15395815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14590778A Pending JPS5571038A (en) | 1978-11-22 | 1978-11-22 | Splitting method for semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5571038A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107543837A (en) * | 2017-08-25 | 2018-01-05 | 郑州磨料磨具磨削研究所有限公司 | The detection method of silicon chip damaging layer after a kind of emery wheel fine grinding |
-
1978
- 1978-11-22 JP JP14590778A patent/JPS5571038A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107543837A (en) * | 2017-08-25 | 2018-01-05 | 郑州磨料磨具磨削研究所有限公司 | The detection method of silicon chip damaging layer after a kind of emery wheel fine grinding |
| CN107543837B (en) * | 2017-08-25 | 2020-02-21 | 郑州磨料磨具磨削研究所有限公司 | Method for detecting damaged layer of silicon wafer after grinding wheel fine grinding |
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