JPS5515259A - Manufacturing method for light emitting element - Google Patents

Manufacturing method for light emitting element

Info

Publication number
JPS5515259A
JPS5515259A JP8875678A JP8875678A JPS5515259A JP S5515259 A JPS5515259 A JP S5515259A JP 8875678 A JP8875678 A JP 8875678A JP 8875678 A JP8875678 A JP 8875678A JP S5515259 A JPS5515259 A JP S5515259A
Authority
JP
Japan
Prior art keywords
light emitting
emitting element
dicing
thereafter
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8875678A
Other languages
Japanese (ja)
Inventor
Tsutomu Koshimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8875678A priority Critical patent/JPS5515259A/en
Publication of JPS5515259A publication Critical patent/JPS5515259A/en
Pending legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To reduce a manufacturing cost for a light emitting element by a combination of a conventional technique with a diffusion process and cutting process.
CONSTITUTION: A p-type diffusion layer is provided by a Si3N4 mask 2 on a n-type CaAsP 1 to make a pn junction 3. A Al electrode 4 is provided in the center of a p- layer surface, and the substarte 1 is polished up to a thickness of 200μ about to mount a Au electrode 5. Successively, the defective elements are marked by checking the characteristics of all the elements, thereafter a dicing is perform from the surface including the full width of Si3N4 up to about two third of the full thickness. Thereafter, the dicing portion is etched to obtain a light emitting element through the separation and check to the defective elements. According to such a method, because the dicing face forms the effective light emitting surface, a great light emitting surface can be obtained. any influence due to a chip size reduction is not appeared in this processing.
COPYRIGHT: (C)1980,JPO&Japio
JP8875678A 1978-07-19 1978-07-19 Manufacturing method for light emitting element Pending JPS5515259A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8875678A JPS5515259A (en) 1978-07-19 1978-07-19 Manufacturing method for light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8875678A JPS5515259A (en) 1978-07-19 1978-07-19 Manufacturing method for light emitting element

Publications (1)

Publication Number Publication Date
JPS5515259A true JPS5515259A (en) 1980-02-02

Family

ID=13951723

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8875678A Pending JPS5515259A (en) 1978-07-19 1978-07-19 Manufacturing method for light emitting element

Country Status (1)

Country Link
JP (1) JPS5515259A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07122778A (en) * 1993-10-26 1995-05-12 Nec Corp Semiconductor optically coupled device
EP0755084A2 (en) * 1995-07-21 1997-01-22 Oki Electric Industry Co., Ltd. Method of fabricating an end face light emitting type light-emitting diode and a light-emitting diode array device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07122778A (en) * 1993-10-26 1995-05-12 Nec Corp Semiconductor optically coupled device
EP0755084A2 (en) * 1995-07-21 1997-01-22 Oki Electric Industry Co., Ltd. Method of fabricating an end face light emitting type light-emitting diode and a light-emitting diode array device
EP0755084A3 (en) * 1995-07-21 1999-05-19 Oki Electric Industry Co., Ltd. Method of fabricating an end face light emitting type light-emitting diode and a light-emitting diode array device

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