JPS644047A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS644047A JPS644047A JP15904487A JP15904487A JPS644047A JP S644047 A JPS644047 A JP S644047A JP 15904487 A JP15904487 A JP 15904487A JP 15904487 A JP15904487 A JP 15904487A JP S644047 A JPS644047 A JP S644047A
- Authority
- JP
- Japan
- Prior art keywords
- gold
- wiring part
- layer
- film
- protective film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To enhance the reliability by a method wherein a conductive layer which is composed of titanium, aluminum or the like and which can enhance the close contact performance between a gold wiring part and a protective film is laid between the gold wiring part and the protective film so that the occurrence of a crack in the protective film or the deterioration of the gold wiring part in a posterior process can be prevented. CONSTITUTION:After an SiO2 film 12 has been formed on a semiconductor substrate 11, a gold layer 13 and a titanium layer 19 are applied to the SiO2 film 12 in succession and are formed. The gold layer 13 and the titanium layer 19 are patterned by using an identical mask; a laminated wiring part 20 of the gold layer 13 and the titanium layer 19 is formed; after that, a plasma SiNx film 14 is formed on the whole surface. Because the close contact performance of titanium with a plasma SiNx as a protective film and with gold as a wiring part is good, it is possible to prevent a crack from being produced in the protective film with the passage of time. Because the titanium layer 19 is laid, the close contact performance between the gold wiring part 13 and the plasma SiNx film 14 is enhanced, an etching solution does not penetrate into an interface between the gold wiring part 13 and the plasma SiNx film 14 in a posterior process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15904487A JPS644047A (en) | 1987-06-26 | 1987-06-26 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15904487A JPS644047A (en) | 1987-06-26 | 1987-06-26 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS644047A true JPS644047A (en) | 1989-01-09 |
Family
ID=15685003
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15904487A Pending JPS644047A (en) | 1987-06-26 | 1987-06-26 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS644047A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5438781A (en) * | 1977-08-31 | 1979-03-23 | Cho Lsi Gijutsu Kenkyu Kumiai | Semiconductor and method of producing same |
| JPS62272557A (en) * | 1986-03-29 | 1987-11-26 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | Manufacture of semiconductor device |
| JPS63161646A (en) * | 1986-12-25 | 1988-07-05 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
-
1987
- 1987-06-26 JP JP15904487A patent/JPS644047A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5438781A (en) * | 1977-08-31 | 1979-03-23 | Cho Lsi Gijutsu Kenkyu Kumiai | Semiconductor and method of producing same |
| JPS62272557A (en) * | 1986-03-29 | 1987-11-26 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | Manufacture of semiconductor device |
| JPS63161646A (en) * | 1986-12-25 | 1988-07-05 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
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