JPS5552221A - Impurity dispersion method and its device - Google Patents
Impurity dispersion method and its deviceInfo
- Publication number
- JPS5552221A JPS5552221A JP12462578A JP12462578A JPS5552221A JP S5552221 A JPS5552221 A JP S5552221A JP 12462578 A JP12462578 A JP 12462578A JP 12462578 A JP12462578 A JP 12462578A JP S5552221 A JPS5552221 A JP S5552221A
- Authority
- JP
- Japan
- Prior art keywords
- impurity
- base plate
- dispersion
- radiating
- pulse laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12462578A JPS5552221A (en) | 1978-10-12 | 1978-10-12 | Impurity dispersion method and its device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12462578A JPS5552221A (en) | 1978-10-12 | 1978-10-12 | Impurity dispersion method and its device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5552221A true JPS5552221A (en) | 1980-04-16 |
Family
ID=14890039
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12462578A Pending JPS5552221A (en) | 1978-10-12 | 1978-10-12 | Impurity dispersion method and its device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5552221A (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5745923A (en) * | 1980-09-04 | 1982-03-16 | Seiko Epson Corp | Light diffusing method |
JPS5750428A (en) * | 1980-09-12 | 1982-03-24 | Nec Corp | Method and apparatus for manufacturing semiconductor device |
JPS60117613A (ja) * | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS62226671A (ja) * | 1986-03-24 | 1987-10-05 | エバラ ソーラー インコーポレイテッド | 半導体の接合形成方法 |
JPS63302518A (ja) * | 1987-06-02 | 1988-12-09 | Fujitsu Ltd | 半導体装置の製造方法 |
EP0372092A1 (en) * | 1988-06-15 | 1990-06-13 | Kabushiki Kaisha Komatsu Seisakusho | Stress conversion device and its production method |
US5225367A (en) * | 1989-08-17 | 1993-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an electronic device |
JPH07211666A (ja) * | 1994-01-20 | 1995-08-11 | Yutaka Ishikawa | 不純物低温拡散方法及び不純物低温拡散装置 |
JP2016157911A (ja) * | 2015-02-25 | 2016-09-01 | 国立大学法人九州大学 | 不純物導入装置、不純物導入方法及び半導体素子の製造方法 |
-
1978
- 1978-10-12 JP JP12462578A patent/JPS5552221A/ja active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5745923A (en) * | 1980-09-04 | 1982-03-16 | Seiko Epson Corp | Light diffusing method |
JPS5750428A (en) * | 1980-09-12 | 1982-03-24 | Nec Corp | Method and apparatus for manufacturing semiconductor device |
JPS60117613A (ja) * | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS62226671A (ja) * | 1986-03-24 | 1987-10-05 | エバラ ソーラー インコーポレイテッド | 半導体の接合形成方法 |
JPS63302518A (ja) * | 1987-06-02 | 1988-12-09 | Fujitsu Ltd | 半導体装置の製造方法 |
EP0372092A1 (en) * | 1988-06-15 | 1990-06-13 | Kabushiki Kaisha Komatsu Seisakusho | Stress conversion device and its production method |
US5225367A (en) * | 1989-08-17 | 1993-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an electronic device |
JPH07211666A (ja) * | 1994-01-20 | 1995-08-11 | Yutaka Ishikawa | 不純物低温拡散方法及び不純物低温拡散装置 |
JP2016157911A (ja) * | 2015-02-25 | 2016-09-01 | 国立大学法人九州大学 | 不純物導入装置、不純物導入方法及び半導体素子の製造方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS57210635A (en) | Manufacture of semiconductor device | |
JPS5430777A (en) | Manufacture of semiconductor device | |
JPS5552221A (en) | Impurity dispersion method and its device | |
JPS5548926A (en) | Preparation of semiconductor device | |
JPS5658269A (en) | Mos type semiconductor device | |
JPS5615035A (en) | Manufacture of semiconductor device | |
JPS5423379A (en) | Formation of insulating film on semiconductor surface | |
JPS5352354A (en) | Semiconductor local heating method | |
JPS5244795A (en) | Formation of silicon nitride film | |
JPS5565428A (en) | Direct formation of thin film pattern | |
JPS5336463A (en) | Manufacture of semiconductor device | |
JPS56146231A (en) | Manufacture of semiconductor device | |
JPS5578546A (en) | Manufacture of semiconductor | |
JPS5373654A (en) | Heat radiating panel | |
JPS5596681A (en) | Method of fabricating semiconductor device | |
JPS54133088A (en) | Semiconductor device | |
JPS5546577A (en) | Method of fabricating semicondcutor device | |
JPS57201015A (en) | Manufacture of semiconductor device | |
JPS55128881A (en) | Method of fabricating semiconductor device | |
JPS54151382A (en) | Manufacture for semiconductor device | |
JPS5378777A (en) | Semiconductor device | |
JPS5398778A (en) | Glass passivation method for semiconductor device | |
JPS55123143A (en) | Manufacture of semiconductor device | |
JPS5254388A (en) | Light emitting diode | |
JPS5585066A (en) | Preparation of semiconductor device |