JPS5615035A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5615035A
JPS5615035A JP8991779A JP8991779A JPS5615035A JP S5615035 A JPS5615035 A JP S5615035A JP 8991779 A JP8991779 A JP 8991779A JP 8991779 A JP8991779 A JP 8991779A JP S5615035 A JPS5615035 A JP S5615035A
Authority
JP
Japan
Prior art keywords
mask
layer
junction
laser light
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8991779A
Other languages
Japanese (ja)
Other versions
JPS633447B2 (en
Inventor
Mitsunori Ketsusako
Haruo Ito
Tadashi Saito
Nobuo Nakamura
Takashi Tokuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP8991779A priority Critical patent/JPS5615035A/en
Publication of JPS5615035A publication Critical patent/JPS5615035A/en
Publication of JPS633447B2 publication Critical patent/JPS633447B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer

Abstract

PURPOSE:To readily form a deep P-N junction at a part of a shallow P-N junction for short time in a semiconductor device by irradiating a laser light to the limited region of an impurity doped layer on the surface of a semiconductor substrate to deeply diffuse it in the limited region. CONSTITUTION:An impurity doped layer is fromed on the surface of a P-type Si substrate 1, and laser light 3 is irradiated thereto to from an N-type Si layer 4. After forming a mask thereon, a laser light 7 is irradiated to deeply diffuse only the portion of the N-type Si layer 4 exposed with an opening 5 of the mask 6 to form a deep P-N junction 8. Then, electrode metal is evaporated in the state that the mask 6 is carried thereon, the mask 6 is then removed to form an electrode metal layer 11.
JP8991779A 1979-07-17 1979-07-17 Manufacture of semiconductor device Granted JPS5615035A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8991779A JPS5615035A (en) 1979-07-17 1979-07-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8991779A JPS5615035A (en) 1979-07-17 1979-07-17 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5615035A true JPS5615035A (en) 1981-02-13
JPS633447B2 JPS633447B2 (en) 1988-01-23

Family

ID=13984051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8991779A Granted JPS5615035A (en) 1979-07-17 1979-07-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5615035A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57136368A (en) * 1981-02-17 1982-08-23 Fujitsu Ltd Manufacture of mis transistor
JPS57138157A (en) * 1981-02-20 1982-08-26 Fujitsu Ltd Manufacture of semiconductor device
US4542580A (en) * 1983-02-14 1985-09-24 Prime Computer, Inc. Method of fabricating n-type silicon regions and associated contacts
JP2011512041A (en) * 2008-04-17 2011-04-14 エルジー エレクトロニクス インコーポレイティド Solar cell, method for forming emitter layer of solar cell, and method for manufacturing solar cell
CN102447004A (en) * 2010-09-30 2012-05-09 Snt能源技术有限公司 Mask, method and apparatus for forming selective emitter of solar cell
JP2014072474A (en) * 2012-10-01 2014-04-21 Sharp Corp Method of manufacturing photoelectric conversion element and photoelectric conversion element
JP2015515747A (en) * 2012-03-14 2015-05-28 アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ Method for manufacturing a solar cell having plated contacts

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4926456A (en) * 1972-07-11 1974-03-08

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4926456A (en) * 1972-07-11 1974-03-08

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57136368A (en) * 1981-02-17 1982-08-23 Fujitsu Ltd Manufacture of mis transistor
JPS57138157A (en) * 1981-02-20 1982-08-26 Fujitsu Ltd Manufacture of semiconductor device
US4542580A (en) * 1983-02-14 1985-09-24 Prime Computer, Inc. Method of fabricating n-type silicon regions and associated contacts
JP2011512041A (en) * 2008-04-17 2011-04-14 エルジー エレクトロニクス インコーポレイティド Solar cell, method for forming emitter layer of solar cell, and method for manufacturing solar cell
US8513754B2 (en) 2008-04-17 2013-08-20 Lg Electronics Inc. Solar cell, method of forming emitter layer of solar cell, and method of manufacturing solar cell
CN102447004A (en) * 2010-09-30 2012-05-09 Snt能源技术有限公司 Mask, method and apparatus for forming selective emitter of solar cell
JP2015515747A (en) * 2012-03-14 2015-05-28 アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ Method for manufacturing a solar cell having plated contacts
JP2014072474A (en) * 2012-10-01 2014-04-21 Sharp Corp Method of manufacturing photoelectric conversion element and photoelectric conversion element

Also Published As

Publication number Publication date
JPS633447B2 (en) 1988-01-23

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