JPS5578546A - Manufacture of semiconductor - Google Patents

Manufacture of semiconductor

Info

Publication number
JPS5578546A
JPS5578546A JP15192378A JP15192378A JPS5578546A JP S5578546 A JPS5578546 A JP S5578546A JP 15192378 A JP15192378 A JP 15192378A JP 15192378 A JP15192378 A JP 15192378A JP S5578546 A JPS5578546 A JP S5578546A
Authority
JP
Japan
Prior art keywords
film
glass
coat
smoothened
uneven
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15192378A
Other languages
Japanese (ja)
Inventor
Hisakazu Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15192378A priority Critical patent/JPS5578546A/en
Publication of JPS5578546A publication Critical patent/JPS5578546A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: To provide on uneven insulating film the coat having a larger beam absorption coefficient and make heat absorption of the coat by applying laser beam thereto so that the surface of the film under the coat is melted to be smoothened.
CONSTITUTION: The whole range of an uneven integrated substrate is covered with 0.3W2μ-thick insulating film of phosphorus silicate glass, or phosphorus, boron or silicic acid glass 17, and the film with 100W1,000Å-thick polysilicon film 18. Laser beam pulses are applied to the film 18 at a rate of 0.2W0.5J/cm2. The film 18 has a larger laser-beam absorption coefficient than the glass 17. Therefore, the temperature of the film 18 rises momentarily, and the glass 17 thereunder becomes fluidic so that the surface thereof is smoothened.
COPYRIGHT: (C)1980,JPO&Japio
JP15192378A 1978-12-11 1978-12-11 Manufacture of semiconductor Pending JPS5578546A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15192378A JPS5578546A (en) 1978-12-11 1978-12-11 Manufacture of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15192378A JPS5578546A (en) 1978-12-11 1978-12-11 Manufacture of semiconductor

Publications (1)

Publication Number Publication Date
JPS5578546A true JPS5578546A (en) 1980-06-13

Family

ID=15529146

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15192378A Pending JPS5578546A (en) 1978-12-11 1978-12-11 Manufacture of semiconductor

Country Status (1)

Country Link
JP (1) JPS5578546A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5750431A (en) * 1980-09-10 1982-03-24 Toshiba Corp Forming method for minute pattern
JPS60198847A (en) * 1984-03-23 1985-10-08 Nec Corp Semiconductor device and manufacture thereof
JPH0336751A (en) * 1989-07-04 1991-02-18 Matsushita Electron Corp Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5750431A (en) * 1980-09-10 1982-03-24 Toshiba Corp Forming method for minute pattern
JPS60198847A (en) * 1984-03-23 1985-10-08 Nec Corp Semiconductor device and manufacture thereof
JPH0336751A (en) * 1989-07-04 1991-02-18 Matsushita Electron Corp Manufacture of semiconductor device

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