JPS5585066A - Preparation of semiconductor device - Google Patents
Preparation of semiconductor deviceInfo
- Publication number
- JPS5585066A JPS5585066A JP15744378A JP15744378A JPS5585066A JP S5585066 A JPS5585066 A JP S5585066A JP 15744378 A JP15744378 A JP 15744378A JP 15744378 A JP15744378 A JP 15744378A JP S5585066 A JPS5585066 A JP S5585066A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- molybdenum
- impurities
- ion injection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To prevent a molybdenum film from oxidation and evaporation of molybdenum by a method wherein the molybdenum film which is used as a metallic gate material, is perfectly covered with a layer insulating film and thermally treated.
CONSTITUTION: A gate electrode pattern and a wiring pattern are formed, an ion injection layer is made up by means of the ion injection of impurities, a layer insulating film 7, such as, a phosphor silicate glass (PSG) film, etc. is built up on the whole surface, and the impurities are activated a metallic gate material by thermal treatment under a condition that the material is coated with the film 7, thus forming a source layer 8 and a drain layer 9.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15744378A JPS5585066A (en) | 1978-12-22 | 1978-12-22 | Preparation of semiconductor device |
DE19792943150 DE2943150A1 (en) | 1978-10-25 | 1979-10-25 | MIS device prodn. with protective film formation on exposed metal - before doping by heat treatment of prevent oxidn. and evapn. of metal, pref. molybdenum |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15744378A JPS5585066A (en) | 1978-12-22 | 1978-12-22 | Preparation of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5585066A true JPS5585066A (en) | 1980-06-26 |
Family
ID=15649757
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15744378A Pending JPS5585066A (en) | 1978-10-25 | 1978-12-22 | Preparation of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5585066A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59177968A (en) * | 1983-03-07 | 1984-10-08 | モトロ−ラ・インコ−ポレ−テツド | Titanium nitride mos device gate electrode |
-
1978
- 1978-12-22 JP JP15744378A patent/JPS5585066A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59177968A (en) * | 1983-03-07 | 1984-10-08 | モトロ−ラ・インコ−ポレ−テツド | Titanium nitride mos device gate electrode |
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