JPS5585066A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS5585066A
JPS5585066A JP15744378A JP15744378A JPS5585066A JP S5585066 A JPS5585066 A JP S5585066A JP 15744378 A JP15744378 A JP 15744378A JP 15744378 A JP15744378 A JP 15744378A JP S5585066 A JPS5585066 A JP S5585066A
Authority
JP
Japan
Prior art keywords
film
layer
molybdenum
impurities
ion injection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15744378A
Other languages
Japanese (ja)
Inventor
Yasunobu Osa
Tatsumi Shirasu
Yukio Tanigaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15744378A priority Critical patent/JPS5585066A/en
Priority to DE19792943150 priority patent/DE2943150A1/en
Publication of JPS5585066A publication Critical patent/JPS5585066A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To prevent a molybdenum film from oxidation and evaporation of molybdenum by a method wherein the molybdenum film which is used as a metallic gate material, is perfectly covered with a layer insulating film and thermally treated.
CONSTITUTION: A gate electrode pattern and a wiring pattern are formed, an ion injection layer is made up by means of the ion injection of impurities, a layer insulating film 7, such as, a phosphor silicate glass (PSG) film, etc. is built up on the whole surface, and the impurities are activated a metallic gate material by thermal treatment under a condition that the material is coated with the film 7, thus forming a source layer 8 and a drain layer 9.
COPYRIGHT: (C)1980,JPO&Japio
JP15744378A 1978-10-25 1978-12-22 Preparation of semiconductor device Pending JPS5585066A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP15744378A JPS5585066A (en) 1978-12-22 1978-12-22 Preparation of semiconductor device
DE19792943150 DE2943150A1 (en) 1978-10-25 1979-10-25 MIS device prodn. with protective film formation on exposed metal - before doping by heat treatment of prevent oxidn. and evapn. of metal, pref. molybdenum

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15744378A JPS5585066A (en) 1978-12-22 1978-12-22 Preparation of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5585066A true JPS5585066A (en) 1980-06-26

Family

ID=15649757

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15744378A Pending JPS5585066A (en) 1978-10-25 1978-12-22 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5585066A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59177968A (en) * 1983-03-07 1984-10-08 モトロ−ラ・インコ−ポレ−テツド Titanium nitride mos device gate electrode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59177968A (en) * 1983-03-07 1984-10-08 モトロ−ラ・インコ−ポレ−テツド Titanium nitride mos device gate electrode

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