JPS5472669A - Impurity diffusing method of closing tube type - Google Patents

Impurity diffusing method of closing tube type

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Publication number
JPS5472669A
JPS5472669A JP14027077A JP14027077A JPS5472669A JP S5472669 A JPS5472669 A JP S5472669A JP 14027077 A JP14027077 A JP 14027077A JP 14027077 A JP14027077 A JP 14027077A JP S5472669 A JPS5472669 A JP S5472669A
Authority
JP
Japan
Prior art keywords
diffusion
gaas
layer
tube type
closing tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14027077A
Other languages
Japanese (ja)
Inventor
Etsuji Omura
Hisao Kumabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14027077A priority Critical patent/JPS5472669A/en
Publication of JPS5472669A publication Critical patent/JPS5472669A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To perform Zn diffusion of low concentration simply to the semiconductor substrat with the closed tube method, by taking the substrate providing Zn introducing layer as diffusion source.
CONSTITUTION: The GaAs substrate 10a forming the Zn diffusion layer 11 of high concentration on the entire surface, GaAs 12 and As13 providing the mask 6 of the insulation film are sealed in the ample 14 of quartz. Next, when it is processed at about 900°C higher than the formation of the diffusion layer 11, the layer 12 is the diffusion source, and the Zn vapor pressure in the ample is lowered than the case that Zn monomor or its compound is taken as the diffusion source and the low concentration Zn diffusion layer 15 of about 1x1013cm-3 can be formed on the GaAs 12. Further, the surface of GaAs 12 is not made coarsed by weighing As 13 as two atoms.
COPYRIGHT: (C)1979,JPO&Japio
JP14027077A 1977-11-22 1977-11-22 Impurity diffusing method of closing tube type Pending JPS5472669A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14027077A JPS5472669A (en) 1977-11-22 1977-11-22 Impurity diffusing method of closing tube type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14027077A JPS5472669A (en) 1977-11-22 1977-11-22 Impurity diffusing method of closing tube type

Publications (1)

Publication Number Publication Date
JPS5472669A true JPS5472669A (en) 1979-06-11

Family

ID=15264859

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14027077A Pending JPS5472669A (en) 1977-11-22 1977-11-22 Impurity diffusing method of closing tube type

Country Status (1)

Country Link
JP (1) JPS5472669A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5506186A (en) * 1988-06-27 1996-04-09 U.S. Philips Corporation Method of manufacturing an optoelectronic device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5506186A (en) * 1988-06-27 1996-04-09 U.S. Philips Corporation Method of manufacturing an optoelectronic device

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