JPS52120763A - Silicon epitaxial growth method - Google Patents

Silicon epitaxial growth method

Info

Publication number
JPS52120763A
JPS52120763A JP3716876A JP3716876A JPS52120763A JP S52120763 A JPS52120763 A JP S52120763A JP 3716876 A JP3716876 A JP 3716876A JP 3716876 A JP3716876 A JP 3716876A JP S52120763 A JPS52120763 A JP S52120763A
Authority
JP
Japan
Prior art keywords
epitaxial growth
growth method
silicon epitaxial
growth
density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3716876A
Other languages
Japanese (ja)
Inventor
Masao Kawamura
Koji Honma
Masahiko Kogirima
Hiroji Saida
Michio Suzuki
Michiyoshi Maki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3716876A priority Critical patent/JPS52120763A/en
Publication of JPS52120763A publication Critical patent/JPS52120763A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To decrease the automatic doping in lateral direction by performing growth with low SiCl4 density only for a short time after start of epitaxial growth and then by shortening the high temperature holding time as much as possible by having continuous growth with high SiCl4 density.
COPYRIGHT: (C)1977,JPO&Japio
JP3716876A 1976-04-05 1976-04-05 Silicon epitaxial growth method Pending JPS52120763A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3716876A JPS52120763A (en) 1976-04-05 1976-04-05 Silicon epitaxial growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3716876A JPS52120763A (en) 1976-04-05 1976-04-05 Silicon epitaxial growth method

Publications (1)

Publication Number Publication Date
JPS52120763A true JPS52120763A (en) 1977-10-11

Family

ID=12490060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3716876A Pending JPS52120763A (en) 1976-04-05 1976-04-05 Silicon epitaxial growth method

Country Status (1)

Country Link
JP (1) JPS52120763A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53146483U (en) * 1977-04-16 1978-11-17
JPS62112319A (en) * 1985-09-06 1987-05-23 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53146483U (en) * 1977-04-16 1978-11-17
JPS62112319A (en) * 1985-09-06 1987-05-23 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ Manufacture of semiconductor device
JPH0736387B2 (en) * 1985-09-06 1995-04-19 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Semiconductor device manufacturing method

Similar Documents

Publication Publication Date Title
JPS5372A (en) Selective doping crystal growing method
JPS52120763A (en) Silicon epitaxial growth method
JPS5434756A (en) Vapor-phase growth method for semiconductor
JPS52110570A (en) Forming method of silicon epitaxial layer
JPS5361577A (en) Growing method for horizontally pulled ribbon crystal
JPS5245273A (en) Method for production of semiconductor device
JPS52143761A (en) Crystal growth method
JPS52104474A (en) Control method for crystal growth
JPS5384457A (en) Liquid-phase epitaxial growth method
JPS5429560A (en) Gas phase growth method for semiconductor
JPS5423467A (en) Singlecrystal growing method for binary semiconductor
JPS52134898A (en) Gap single crystal with low dislocation density
JPS5211860A (en) Liquid phase epitaxial device
JPS52135264A (en) Liquid phase epitaxial growth method
JPS524782A (en) Liquid phase epitaxial growth method
JPS52116072A (en) Process for doping nitrogen to gallium phosphide
JPS52129277A (en) Liquid phase epitaxial growth method
JPS548457A (en) Impurity introducing method to poly-crystal silicon
JPS52115171A (en) Liquid phase epitaxial growing method
JPS5376657A (en) Liquid phase epitaxial growth method
JPS5286058A (en) Liquid phase epitaxial growth
JPS51111057A (en) Crystal growing device
JPS52155189A (en) Multiple layer crystal growth
JPS53121569A (en) Vapor growth method
JPS5286775A (en) Bebeling method for semiconductor substrate