JPS5596633A - Method of forming electrode of semiconductor device - Google Patents
Method of forming electrode of semiconductor deviceInfo
- Publication number
- JPS5596633A JPS5596633A JP513379A JP513379A JPS5596633A JP S5596633 A JPS5596633 A JP S5596633A JP 513379 A JP513379 A JP 513379A JP 513379 A JP513379 A JP 513379A JP S5596633 A JPS5596633 A JP S5596633A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- semiconductor device
- torr
- diffusing
- low resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To obtain low resistance ohmic contact at a semiconductor device by diffusing Zn at predetermined temperature and in phosphorus pressure atmosphere at Ga, As and P substrate containing much phosphorus content and then retaining the substrate at 100W300°C with aluminum provided.
CONSTITUTION: Zn is diffused at Ga, As1-X, PX substrate, where X is limited to 0.6≤X≤1.0, in a sealed tube under the condition that phosphorus pressure P is 1×10-1Torr≤P≤2×103Torr and the diffusing temperature Tj is 650°C≤Tj ≤800°C. Then, the substrate is heated at 100W300°C, and vacuum deposited with aluminum in such heated state. The substrate is finally heat treated at 450W600°C for approx. 60min. According to this method, the substrate does not sacrifice the fundamental characteristics of the semiconductor device but can obtain extremely stable low resistance ohimc contact in mass production.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP513379A JPS5596633A (en) | 1979-01-19 | 1979-01-19 | Method of forming electrode of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP513379A JPS5596633A (en) | 1979-01-19 | 1979-01-19 | Method of forming electrode of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5596633A true JPS5596633A (en) | 1980-07-23 |
Family
ID=11602805
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP513379A Pending JPS5596633A (en) | 1979-01-19 | 1979-01-19 | Method of forming electrode of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5596633A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59186379A (en) * | 1983-04-07 | 1984-10-23 | Nec Corp | Manufacture of compound semiconductor device |
JPH01164028A (en) * | 1987-12-21 | 1989-06-28 | Nippon Telegr & Teleph Corp <Ntt> | Formation of ohmic electrode and apparatus therefor |
-
1979
- 1979-01-19 JP JP513379A patent/JPS5596633A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59186379A (en) * | 1983-04-07 | 1984-10-23 | Nec Corp | Manufacture of compound semiconductor device |
JPH01164028A (en) * | 1987-12-21 | 1989-06-28 | Nippon Telegr & Teleph Corp <Ntt> | Formation of ohmic electrode and apparatus therefor |
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