JPS5379459A - Doping prodess device - Google Patents
Doping prodess deviceInfo
- Publication number
- JPS5379459A JPS5379459A JP15514076A JP15514076A JPS5379459A JP S5379459 A JPS5379459 A JP S5379459A JP 15514076 A JP15514076 A JP 15514076A JP 15514076 A JP15514076 A JP 15514076A JP S5379459 A JPS5379459 A JP S5379459A
- Authority
- JP
- Japan
- Prior art keywords
- doping
- prodess
- dopant
- squeeze
- coming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To perform an accurate doping as desired by having one coming and going for the doping gas pipe within the heating chamber and making pass the dopant through the low temperature part to squeeze the extra amount of the dopant.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15514076A JPS5379459A (en) | 1976-12-24 | 1976-12-24 | Doping prodess device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15514076A JPS5379459A (en) | 1976-12-24 | 1976-12-24 | Doping prodess device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5379459A true JPS5379459A (en) | 1978-07-13 |
Family
ID=15599413
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15514076A Pending JPS5379459A (en) | 1976-12-24 | 1976-12-24 | Doping prodess device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5379459A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63193897A (en) * | 1987-01-20 | 1988-08-11 | アメリカン テレフォン アンド テレグラフ カムパニー | Vapor phase epitaxial growth method of 3-v compound semiconductor using indium, to which iron is doped, as base |
US5198387A (en) * | 1989-12-01 | 1993-03-30 | Texas Instruments Incorporated | Method and apparatus for in-situ doping of deposited silicon |
-
1976
- 1976-12-24 JP JP15514076A patent/JPS5379459A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63193897A (en) * | 1987-01-20 | 1988-08-11 | アメリカン テレフォン アンド テレグラフ カムパニー | Vapor phase epitaxial growth method of 3-v compound semiconductor using indium, to which iron is doped, as base |
JPH0543680B2 (en) * | 1987-01-20 | 1993-07-02 | American Telephone & Telegraph | |
US5198387A (en) * | 1989-12-01 | 1993-03-30 | Texas Instruments Incorporated | Method and apparatus for in-situ doping of deposited silicon |
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