JPS5532088A - Photo mask forming method - Google Patents

Photo mask forming method

Info

Publication number
JPS5532088A
JPS5532088A JP10593578A JP10593578A JPS5532088A JP S5532088 A JPS5532088 A JP S5532088A JP 10593578 A JP10593578 A JP 10593578A JP 10593578 A JP10593578 A JP 10593578A JP S5532088 A JPS5532088 A JP S5532088A
Authority
JP
Japan
Prior art keywords
layer
photosensitive
mask
photo masks
plates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10593578A
Other languages
Japanese (ja)
Inventor
Yonosuke Takahashi
Fumiaki Shinozaki
Tomoaki Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP10593578A priority Critical patent/JPS5532088A/en
Publication of JPS5532088A publication Critical patent/JPS5532088A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

PURPOSE:To form photo masks of both negative and positive types from the same material, by providing a mask layer and a specified photosensitive resin omposition layer chiefly made of o-quinone diazide compound on a transparent supporting body. CONSTITUTION:In forming photo masks for micro-electronic contraction, a solution of photosensitive resin containing o-quinone diazide compound and secondary or tertiary amine of which boiling point is more than 200 deg.C is spread on a layer for mask which is prepared by commonly evaporating Al and Fe by the atomic number ratio of 98.5% to 1.5% on a glass substrate. Thus, a photosensitive layer is formed. By contact-exposing a chromium mask on this photosensitive layer, two photosensitive plates a, b are fabricated. The plate a is directly heated, while the plate b is heated after re-exposure. The plates a, b are developed in the same developer containing NaOH, and etched to obtain photo masks of positive and negative working.
JP10593578A 1978-08-30 1978-08-30 Photo mask forming method Pending JPS5532088A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10593578A JPS5532088A (en) 1978-08-30 1978-08-30 Photo mask forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10593578A JPS5532088A (en) 1978-08-30 1978-08-30 Photo mask forming method

Publications (1)

Publication Number Publication Date
JPS5532088A true JPS5532088A (en) 1980-03-06

Family

ID=14420697

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10593578A Pending JPS5532088A (en) 1978-08-30 1978-08-30 Photo mask forming method

Country Status (1)

Country Link
JP (1) JPS5532088A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57204539A (en) * 1981-06-11 1982-12-15 Toyobo Co Ltd Formation of metallic image and reducing method for metallic image
JPS5879246A (en) * 1981-11-05 1983-05-13 Toyobo Co Ltd Formation of metallic image and reducing method for metallic image
JPS58114031A (en) * 1981-12-23 1983-07-07 ヘキスト・アクチエンゲゼルシヤフト Manufacture of relief image
JPS61229267A (en) * 1985-04-02 1986-10-13 Pioneer Electronic Corp Disc player
JPS61241745A (en) * 1985-04-18 1986-10-28 Oki Electric Ind Co Ltd Negative type photoresist composition and formation of resist pattern
JPS61186263U (en) * 1985-05-09 1986-11-20
JPS6238448A (en) * 1985-08-12 1987-02-19 ヘキスト・セラニ−ズ・コ−ポレイシヨン Making of negative image for positive type photographic material
JPS63271442A (en) * 1987-04-11 1988-11-09 チバ　スペシャルティ　ケミカルズ　ホールディング　インコーポレーテッド Formation of image
US4988609A (en) * 1987-06-18 1991-01-29 Kabushiki Kaisha Toshiba Method of forming micro patterns
US5725997A (en) * 1995-07-26 1998-03-10 Tdk Corporation Method for preparing a resist pattern of t-shaped cross section

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49127615A (en) * 1973-04-07 1974-12-06
JPS50108002A (en) * 1974-02-01 1975-08-26
JPS50155302A (en) * 1974-06-10 1975-12-15
JPS51135641A (en) * 1975-05-20 1976-11-24 Kimoto & Co Ltd Photosensitive film
JPS526528A (en) * 1975-06-30 1977-01-19 Ibm Method of forming resist film

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49127615A (en) * 1973-04-07 1974-12-06
JPS50108002A (en) * 1974-02-01 1975-08-26
JPS50155302A (en) * 1974-06-10 1975-12-15
JPS51135641A (en) * 1975-05-20 1976-11-24 Kimoto & Co Ltd Photosensitive film
JPS526528A (en) * 1975-06-30 1977-01-19 Ibm Method of forming resist film

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57204539A (en) * 1981-06-11 1982-12-15 Toyobo Co Ltd Formation of metallic image and reducing method for metallic image
JPS5879246A (en) * 1981-11-05 1983-05-13 Toyobo Co Ltd Formation of metallic image and reducing method for metallic image
JPS58114031A (en) * 1981-12-23 1983-07-07 ヘキスト・アクチエンゲゼルシヤフト Manufacture of relief image
JPH0347493B2 (en) * 1981-12-23 1991-07-19 Hoechst Ag
JPS61229267A (en) * 1985-04-02 1986-10-13 Pioneer Electronic Corp Disc player
JPS61241745A (en) * 1985-04-18 1986-10-28 Oki Electric Ind Co Ltd Negative type photoresist composition and formation of resist pattern
JPS61186263U (en) * 1985-05-09 1986-11-20
JPH0510373Y2 (en) * 1985-05-09 1993-03-15
JPS6238448A (en) * 1985-08-12 1987-02-19 ヘキスト・セラニ−ズ・コ−ポレイシヨン Making of negative image for positive type photographic material
JPS63271442A (en) * 1987-04-11 1988-11-09 チバ　スペシャルティ　ケミカルズ　ホールディング　インコーポレーテッド Formation of image
US4988609A (en) * 1987-06-18 1991-01-29 Kabushiki Kaisha Toshiba Method of forming micro patterns
US5725997A (en) * 1995-07-26 1998-03-10 Tdk Corporation Method for preparing a resist pattern of t-shaped cross section

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