JPS54134565A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS54134565A
JPS54134565A JP4247578A JP4247578A JPS54134565A JP S54134565 A JPS54134565 A JP S54134565A JP 4247578 A JP4247578 A JP 4247578A JP 4247578 A JP4247578 A JP 4247578A JP S54134565 A JPS54134565 A JP S54134565A
Authority
JP
Japan
Prior art keywords
parts
transmission region
mask
light non
circumference
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4247578A
Other languages
Japanese (ja)
Other versions
JPS562408B2 (en
Inventor
Terunobu Miura
Hideo Sei
Shuji Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4247578A priority Critical patent/JPS54134565A/en
Publication of JPS54134565A publication Critical patent/JPS54134565A/en
Publication of JPS562408B2 publication Critical patent/JPS562408B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: To obtain a large-area and high-precision semiconductor by using a unit mask, which has a light non-transmission region at the circumference part, and an auxiliary mask, where a high-precision pattern is formed in the part corresponding to the region above, when compensating the error at the unit mask circumference part.
CONSTITUTION: Unit masks A and B where light non-transmission region parts nA and nB are formed at the mask circumference part and light transmission region t and light non-transmission region n are formed in other parts are arranged on photo resistor film P, which is formed on silicon substrate Si, and exposure is performed. Next, exposure is performed by auxiliary mask Z where a high-precision pattern is formed only the joining part of circumference parts of unit masks A and B, namely, parts corresponding to light non-transmission region parts nA and nB. This silicon substrate is developed to form a semiconductor device having a correct pattern.
COPYRIGHT: (C)1979,JPO&Japio
JP4247578A 1978-04-10 1978-04-10 Production of semiconductor device Granted JPS54134565A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4247578A JPS54134565A (en) 1978-04-10 1978-04-10 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4247578A JPS54134565A (en) 1978-04-10 1978-04-10 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS54134565A true JPS54134565A (en) 1979-10-19
JPS562408B2 JPS562408B2 (en) 1981-01-20

Family

ID=12637077

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4247578A Granted JPS54134565A (en) 1978-04-10 1978-04-10 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54134565A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57181490U (en) * 1981-05-11 1982-11-17
JPS58502173A (en) * 1981-12-21 1983-12-15 バロ−ス・コ−ポレ−ション Improvements in and relating to wafer scale integrated circuits
JPS6247129A (en) * 1985-08-26 1987-02-28 Fujitsu Ltd Manufacture of semiconductor device
JPS62147728A (en) * 1985-12-23 1987-07-01 Fujitsu Ltd Exposing method
JPS62153858A (en) * 1985-12-21 1987-07-08 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Generation of pattern of photoresist
US4814830A (en) * 1985-04-01 1989-03-21 Canon Kabushiki Kaisha Flat panel display device and manufacturing of the same
US4864360A (en) * 1985-04-25 1989-09-05 Canon Kabushiki Kaisha Exposure apparatus
JPH01227432A (en) * 1988-03-08 1989-09-11 Nikon Corp Aligner
US4878086A (en) * 1985-04-01 1989-10-31 Canon Kabushiki Kaisha Flat panel display device and manufacturing of the same
US4883359A (en) * 1984-02-28 1989-11-28 Canon Kabushiki Kaisha Alignment method and pattern forming method using the same
JPH03116714A (en) * 1989-09-28 1991-05-17 Nec Ic Microcomput Syst Ltd Manufacture of semiconductor integrated circuit element

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0120076Y2 (en) * 1981-05-11 1989-06-12
JPS57181490U (en) * 1981-05-11 1982-11-17
JPS58502173A (en) * 1981-12-21 1983-12-15 バロ−ス・コ−ポレ−ション Improvements in and relating to wafer scale integrated circuits
US4883359A (en) * 1984-02-28 1989-11-28 Canon Kabushiki Kaisha Alignment method and pattern forming method using the same
US4878086A (en) * 1985-04-01 1989-10-31 Canon Kabushiki Kaisha Flat panel display device and manufacturing of the same
US4814830A (en) * 1985-04-01 1989-03-21 Canon Kabushiki Kaisha Flat panel display device and manufacturing of the same
US4864360A (en) * 1985-04-25 1989-09-05 Canon Kabushiki Kaisha Exposure apparatus
US4998134A (en) * 1985-04-25 1991-03-05 Canon Kabushiki Kaisha Exposure apparatus
JPS6247129A (en) * 1985-08-26 1987-02-28 Fujitsu Ltd Manufacture of semiconductor device
JPS62153858A (en) * 1985-12-21 1987-07-08 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Generation of pattern of photoresist
JPS62147728A (en) * 1985-12-23 1987-07-01 Fujitsu Ltd Exposing method
JPH01227432A (en) * 1988-03-08 1989-09-11 Nikon Corp Aligner
JPH03116714A (en) * 1989-09-28 1991-05-17 Nec Ic Microcomput Syst Ltd Manufacture of semiconductor integrated circuit element

Also Published As

Publication number Publication date
JPS562408B2 (en) 1981-01-20

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