JPS5515237A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5515237A JPS5515237A JP8811478A JP8811478A JPS5515237A JP S5515237 A JPS5515237 A JP S5515237A JP 8811478 A JP8811478 A JP 8811478A JP 8811478 A JP8811478 A JP 8811478A JP S5515237 A JPS5515237 A JP S5515237A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- resist
- high density
- injection layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To avert an influence due to emission into a substrate of a minority carrier increasing in accordance with contraction of a device by forming a recombination center in the substrate certainly in a simplified process.
CONSTITUTION: A SiO2 2 and Si2N4 3 are laminated on a p-type Si substrate 1, after the film 3 is removed by a resist 4, A B-ion injection layer 5 is formed for prevention of reversion. A resist 6 is newly provided and a B-ion injection layer 7 with a high density. The resist 6 is removed and wet oxidization is performed to make a field oxidization film 8. In this processing, a lamination recession 9 with a high density cotaining an impurity ion as a generation neuclear is generated in the high density ion injection layer 7. The recession 9 is turned to a recombination center to catch the minority carrier emmited into the substrate certainly and permit a stable circuit operation. Successively, the film 2 and 3 are removed, a gate oxidization film 10, a poly Si electrode 11 and n+layer 12 and 13 are formed, and an electrode is selectively formed after covering it with the insulation film.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8811478A JPS5515237A (en) | 1978-07-19 | 1978-07-19 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8811478A JPS5515237A (en) | 1978-07-19 | 1978-07-19 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5515237A true JPS5515237A (en) | 1980-02-02 |
Family
ID=13933853
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8811478A Pending JPS5515237A (en) | 1978-07-19 | 1978-07-19 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5515237A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5790973A (en) * | 1980-11-27 | 1982-06-05 | Nec Corp | Semiconductor base body |
JPS57107074A (en) * | 1980-12-25 | 1982-07-03 | Nec Corp | Semiconductor device |
JPS6052053A (en) * | 1983-08-31 | 1985-03-23 | Mitsubishi Electric Corp | Semiconductor memory device |
JPH08227895A (en) * | 1995-02-20 | 1996-09-03 | Rohm Co Ltd | Semiconductor device and manufacture thereof |
-
1978
- 1978-07-19 JP JP8811478A patent/JPS5515237A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5790973A (en) * | 1980-11-27 | 1982-06-05 | Nec Corp | Semiconductor base body |
JPS57107074A (en) * | 1980-12-25 | 1982-07-03 | Nec Corp | Semiconductor device |
JPS6052053A (en) * | 1983-08-31 | 1985-03-23 | Mitsubishi Electric Corp | Semiconductor memory device |
JPH08227895A (en) * | 1995-02-20 | 1996-09-03 | Rohm Co Ltd | Semiconductor device and manufacture thereof |
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