JPS5515237A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5515237A
JPS5515237A JP8811478A JP8811478A JPS5515237A JP S5515237 A JPS5515237 A JP S5515237A JP 8811478 A JP8811478 A JP 8811478A JP 8811478 A JP8811478 A JP 8811478A JP S5515237 A JPS5515237 A JP S5515237A
Authority
JP
Japan
Prior art keywords
film
substrate
resist
high density
injection layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8811478A
Other languages
Japanese (ja)
Inventor
Junichi Matsunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8811478A priority Critical patent/JPS5515237A/en
Publication of JPS5515237A publication Critical patent/JPS5515237A/en
Pending legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To avert an influence due to emission into a substrate of a minority carrier increasing in accordance with contraction of a device by forming a recombination center in the substrate certainly in a simplified process.
CONSTITUTION: A SiO2 2 and Si2N4 3 are laminated on a p-type Si substrate 1, after the film 3 is removed by a resist 4, A B-ion injection layer 5 is formed for prevention of reversion. A resist 6 is newly provided and a B-ion injection layer 7 with a high density. The resist 6 is removed and wet oxidization is performed to make a field oxidization film 8. In this processing, a lamination recession 9 with a high density cotaining an impurity ion as a generation neuclear is generated in the high density ion injection layer 7. The recession 9 is turned to a recombination center to catch the minority carrier emmited into the substrate certainly and permit a stable circuit operation. Successively, the film 2 and 3 are removed, a gate oxidization film 10, a poly Si electrode 11 and n+layer 12 and 13 are formed, and an electrode is selectively formed after covering it with the insulation film.
COPYRIGHT: (C)1980,JPO&Japio
JP8811478A 1978-07-19 1978-07-19 Semiconductor device Pending JPS5515237A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8811478A JPS5515237A (en) 1978-07-19 1978-07-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8811478A JPS5515237A (en) 1978-07-19 1978-07-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5515237A true JPS5515237A (en) 1980-02-02

Family

ID=13933853

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8811478A Pending JPS5515237A (en) 1978-07-19 1978-07-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5515237A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5790973A (en) * 1980-11-27 1982-06-05 Nec Corp Semiconductor base body
JPS57107074A (en) * 1980-12-25 1982-07-03 Nec Corp Semiconductor device
JPS6052053A (en) * 1983-08-31 1985-03-23 Mitsubishi Electric Corp Semiconductor memory device
JPH08227895A (en) * 1995-02-20 1996-09-03 Rohm Co Ltd Semiconductor device and manufacture thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5790973A (en) * 1980-11-27 1982-06-05 Nec Corp Semiconductor base body
JPS57107074A (en) * 1980-12-25 1982-07-03 Nec Corp Semiconductor device
JPS6052053A (en) * 1983-08-31 1985-03-23 Mitsubishi Electric Corp Semiconductor memory device
JPH08227895A (en) * 1995-02-20 1996-09-03 Rohm Co Ltd Semiconductor device and manufacture thereof

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