JPS5335374A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5335374A JPS5335374A JP10958676A JP10958676A JPS5335374A JP S5335374 A JPS5335374 A JP S5335374A JP 10958676 A JP10958676 A JP 10958676A JP 10958676 A JP10958676 A JP 10958676A JP S5335374 A JPS5335374 A JP S5335374A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- equivalent
- terms
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To obtain characteristics more than equivalent in terms of leakage current and noise factor as compared to thermal diffusion by forming a conductive film on an insulator ion implanted mask and making ion implantation.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10958676A JPS5335374A (en) | 1976-09-13 | 1976-09-13 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10958676A JPS5335374A (en) | 1976-09-13 | 1976-09-13 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5335374A true JPS5335374A (en) | 1978-04-01 |
Family
ID=14514009
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10958676A Pending JPS5335374A (en) | 1976-09-13 | 1976-09-13 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5335374A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5896732A (en) * | 1981-12-03 | 1983-06-08 | Matsushita Electronics Corp | Ion implantation |
US4463493A (en) * | 1981-10-14 | 1984-08-07 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for making mask aligned narrow isolation grooves for a semiconductor device |
US5514616A (en) * | 1991-08-26 | 1996-05-07 | Lsi Logic Corporation | Depositing and densifying glass to planarize layers in semi-conductor devices based on CMOS structures |
-
1976
- 1976-09-13 JP JP10958676A patent/JPS5335374A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4463493A (en) * | 1981-10-14 | 1984-08-07 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for making mask aligned narrow isolation grooves for a semiconductor device |
JPS5896732A (en) * | 1981-12-03 | 1983-06-08 | Matsushita Electronics Corp | Ion implantation |
JPH0258771B2 (en) * | 1981-12-03 | 1990-12-10 | Matsushita Electronics Corp | |
US5514616A (en) * | 1991-08-26 | 1996-05-07 | Lsi Logic Corporation | Depositing and densifying glass to planarize layers in semi-conductor devices based on CMOS structures |
US5874327A (en) * | 1991-08-26 | 1999-02-23 | Lsi Logic Corporation | Fabricating a semiconductor device using precursor CMOS semiconductor substrate of a given configuration |
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