JPS5335374A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5335374A
JPS5335374A JP10958676A JP10958676A JPS5335374A JP S5335374 A JPS5335374 A JP S5335374A JP 10958676 A JP10958676 A JP 10958676A JP 10958676 A JP10958676 A JP 10958676A JP S5335374 A JPS5335374 A JP S5335374A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
equivalent
terms
conductive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10958676A
Other languages
Japanese (ja)
Inventor
Masahiko Nakatsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10958676A priority Critical patent/JPS5335374A/en
Publication of JPS5335374A publication Critical patent/JPS5335374A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To obtain characteristics more than equivalent in terms of leakage current and noise factor as compared to thermal diffusion by forming a conductive film on an insulator ion implanted mask and making ion implantation.
COPYRIGHT: (C)1978,JPO&Japio
JP10958676A 1976-09-13 1976-09-13 Production of semiconductor device Pending JPS5335374A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10958676A JPS5335374A (en) 1976-09-13 1976-09-13 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10958676A JPS5335374A (en) 1976-09-13 1976-09-13 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5335374A true JPS5335374A (en) 1978-04-01

Family

ID=14514009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10958676A Pending JPS5335374A (en) 1976-09-13 1976-09-13 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5335374A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5896732A (en) * 1981-12-03 1983-06-08 Matsushita Electronics Corp Ion implantation
US4463493A (en) * 1981-10-14 1984-08-07 Tokyo Shibaura Denki Kabushiki Kaisha Method for making mask aligned narrow isolation grooves for a semiconductor device
US5514616A (en) * 1991-08-26 1996-05-07 Lsi Logic Corporation Depositing and densifying glass to planarize layers in semi-conductor devices based on CMOS structures

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4463493A (en) * 1981-10-14 1984-08-07 Tokyo Shibaura Denki Kabushiki Kaisha Method for making mask aligned narrow isolation grooves for a semiconductor device
JPS5896732A (en) * 1981-12-03 1983-06-08 Matsushita Electronics Corp Ion implantation
JPH0258771B2 (en) * 1981-12-03 1990-12-10 Matsushita Electronics Corp
US5514616A (en) * 1991-08-26 1996-05-07 Lsi Logic Corporation Depositing and densifying glass to planarize layers in semi-conductor devices based on CMOS structures
US5874327A (en) * 1991-08-26 1999-02-23 Lsi Logic Corporation Fabricating a semiconductor device using precursor CMOS semiconductor substrate of a given configuration

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